Table 3.
Comparison of different resistive switching parameters of our results with the reported results.
Structure | Operating voltage (set/reset) (V) | Power (μW) | Retention | Endurance | P/D Cycles | P/D NL | Recognition accuracy | Light used | Photo conductance relaxation time (s) and fitting index | Ref |
---|---|---|---|---|---|---|---|---|---|---|
ITO/TaOx/ZTO/ITO | 1.0/−1.2 | 100 | 104 | 106 | 790 | 1.8/−1.3 | 96%, 17 iterations | 400 nm- 800 nm | – | 49 |
Ni/ZTO/Si | 3.0/−3.5 | – | 103 | – | 3 | – | 89% | – | – | 50 |
Ta/ZnSnO/TiN | −0.1/+ 1.5 | 100 | 104 | 100 | 4 | 3.5/2.2 | – | – | – | 51 |
Ti/HfOx/HfO2/AlOx | 0.9/−1 | 9 | – | – | 3 | 1.94/0.61 | – | – | – | 52 |
ITO/MoOx/Pd | 2.5/−2.13 | 1 | 104 | – | 500 | 98.6%,1000 epochs | 365 nm | 24 | ||
TiN/TaOy/TaOx/Pt | 1 to 3 /−1.4 to −1.9 | – | 104 | 1000 | 200 | 0.83/2.03 | 92%, 23 epochs | – | – | 53 |
Au/BFMO/ITO/Glass | 2.5/−2.5 | 50 | 3600 | 1000 | 1 | 0.29 | 98.80% | 365 nm | – | 54 |
Au/ZnO/Pt | 2/−2 | 0.01 | 104 | – | 20 | – | 98%, 40 epochs | 530 nm | – | 55 |
ITO/ZnOx/AlOy/Al | 5 /−8 | 5 | 103 | 1000 | 60 | – | – | UV | – | 56 |
ITO /MoOx/ Pd | 2/-2 | 104/cm2 | 800 | – | – | – | 98.6%, 1000 epochs | UV | – | 24 |
Ni/TiW/HfOx/TaOx/TiN | 1/−1 | 150 | 104 | 200 | 35 | 3.54/1.65 | 100%, 24 iterations | – | – | 57 |
Pt/TiOx/Al2O3/Pt/ITO | 1.5/−0.4 | 10 | 104 | 106 | – | 1.62/1.46 | 91.15%, 100 epochs | – | – | 58 |
Ta/TaOx/TiO2/Ti | – | – | – | – | 50 | 1.85/−1.79 | 100%, 60 epochs | – | – | 59 |
TiN/TaOy/TaOx/Pt | 1.2/−1.5 | 0.7 | 104 | 106 | 200 | 0.83/-2.03 | 92%, 23 epochs | – | – | 60 |
Ta/HfO2/Pt | 0.5/−0.4 | 0.4 | 106 | 103 | 5 | ANL 0.845 | 91%, 20 epochs | – | – | 61 |
ITO/SnOx/HfOx/ITO/PEN | 1.3/−1.6 | 0.27 | > 104 | 104 | 350 | 1.53/1.46 | 100%, 23 iterations | Blue laser | 225.47, 0.29901 | This work |