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. 2023 Jan 26;13:1454. doi: 10.1038/s41598-023-28505-3

Table 3.

Comparison of different resistive switching parameters of our results with the reported results.

Structure Operating voltage (set/reset) (V) Power (μW) Retention Endurance P/D Cycles P/D NL Recognition accuracy Light used Photo conductance relaxation time (s) and fitting index Ref
ITO/TaOx/ZTO/ITO 1.0/−1.2 100 104 106 790 1.8/−1.3 96%, 17 iterations 400 nm- 800 nm 49
Ni/ZTO/Si 3.0/−3.5 103 3 89% 50
Ta/ZnSnO/TiN −0.1/+ 1.5 100 104 100 4 3.5/2.2 51
Ti/HfOx/HfO2/AlOx 0.9/−1 9 3 1.94/0.61 52
ITO/MoOx/Pd 2.5/−2.13 1 104 500 98.6%,1000 epochs 365 nm 24
TiN/TaOy/TaOx/Pt 1 to 3 /−1.4 to −1.9 104 1000 200 0.83/2.03 92%, 23 epochs 53
Au/BFMO/ITO/Glass 2.5/−2.5 50 3600 1000 1 0.29 98.80% 365 nm 54
Au/ZnO/Pt 2/−2 0.01 104 20 98%, 40 epochs 530 nm 55
ITO/ZnOx/AlOy/Al 5 /−8 5 103 1000 60 UV 56
ITO /MoOx/ Pd 2/-2 104/cm2 800 98.6%, 1000 epochs UV 24
Ni/TiW/HfOx/TaOx/TiN 1/−1 150 104 200 35 3.54/1.65 100%, 24 iterations 57
Pt/TiOx/Al2O3/Pt/ITO 1.5/−0.4 10 104 106 1.62/1.46 91.15%, 100 epochs 58
Ta/TaOx/TiO2/Ti 50 1.85/−1.79 100%, 60 epochs 59
TiN/TaOy/TaOx/Pt 1.2/−1.5 0.7 104 106 200 0.83/-2.03 92%, 23 epochs 60
Ta/HfO2/Pt 0.5/−0.4 0.4 106 103 5 ANL 0.845 91%, 20 epochs 61
ITO/SnOx/HfOx/ITO/PEN 1.3/−1.6 0.27  > 104 104 350 1.53/1.46 100%, 23 iterations Blue laser 225.47, 0.29901 This work