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. 2023 Feb 1;14:527. doi: 10.1038/s41467-023-36221-9

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© The Author(s) 2023, corrected publication 2024

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Crystal structure of USbTe. b First Brillouin zone of USbTe. c Magnetization M of USbTe single crystal with a magnetic field of 0.1 T applied along the c axis and ab plane. Inset: Magnetization M of USbTe single crystal as a function of magnetic field at 2 K. d Temperature dependence of specific heat C of USbTe single crystal. Inset: C/T as a function of T² showing the Sommerfeld coefficient as intercept. e Temperature dependence of the longitudinal electric resistivity ρ_xx in zero-field for USbTe single crystal. Current is applied along a axis. f Magnetic field dependence of the Hall resistivity ρ_xyof USbTe single crystal at 2 K. Magnetic field is applied along c axis and electric current is along a axis.