Fig. 2. Anomalous Hall effect of USbTe and the scaling analysis.

a Magnetic field dependence of the anomalous Hall resistivity ${\rho }_{xy}^a$ of USbTe single crystal at three different temperatures, showing a clear sign change of AHE upon cooling, well below T_c of 125 K. Magnetic field is applied along c axis and electric current is along a axis. b Temperature dependence of anomalous Hall resistivity ${\rho }_{xy}^a$ in zero magnetic fields. c Carrier density extrapolated from the slope of the Hall resistivity as a function of temperature. Carriers remain to be electrons for the whole temperature range. d${\sigma }_{xy}^a$ as a function of ${\sigma }_{xx}^2$, showing that ${\sigma }_{xy}^a$ is independent of ${\sigma }_{xx}^2$ below 6 K. e${\rho }_{xy}^{a}M$(0K)/(Mρ_xx) as a function of ρ_xx. The slope of the plot represents the intrinsic Berry curvature contribution to the AHE while the intercept represents the extrinsic skew scattering contribution to the AHE. f Estimated contributions to AHE from Berry curvature and skew scattering. In the temperature range of 2–6 and 70–100 K (solid symbols), the separation of intrinsic Berry curvature and extrinsic skew scattering contribution is based on established scaling relation with no additional assumptions. In the temperature range of 6–70 K (circle symbols), the exact temperature dependence of each part is not known and is estimated using the assumption discussed in the main text for simplicity.