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. 2023 Feb 7;12:39. doi: 10.1038/s41377-023-01079-5

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a I-V characteristics of a G/M/G device with binary photoresponse switching when the voltage sweeps from 0 to 2 V, from 2 V to –2 V, and back to 0 V. b Raman curves showing the evolution of redox reactions on graphene electrodes when switching between HPS and LPS. c Correlation of changes in the ratio of the intensities of Raman scattering and shifts of the G mode of graphene electrodes and states of the non-volatile photoresponse. TCAD-simulated dark/photo current of the G/M/G device for LPS (d) and HPS (e). The insets of (d) and (e) demonstrate the qualitative device model for LPS and HPS, respectively. f The electron current density distribution of LPS (top) and HPS (bottom) under illumination, simulated with TCAD. g TCAD simulated the hole current density distribution of LPS (top) and HPS (bottom) under illumination, simulated with TCAD