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. 2023 Feb 7;12:39. doi: 10.1038/s41377-023-01079-5

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Illustration of an in-memory IMP operation based on a set of photomemristors triggered by light stimuli. b I-V characteristics of devices s, p and q under illumination with different light intensities. c Diagram of the optical and electrical pulses applied for the IMP operation. The blue and red curves show the optical and electrical signal of devices p and q before and during the IMP operation, and the orange curves show the change in photoresponse states after IMP operations, reproducing the IMP truth table. d Illustration of an in-memory FALSE operation triggered by light stimuli based on a set of photomemristors. e I-V characteristics of devices p and q under illumination. f Diagram of the optical and electrical pulses applied for the FALSE operation. The blue and red curves show the optical and electrical signal of devices p and q before and during the FALSE operation. The black curves show the change in photoresponse states after FALSE operations, reproducing the FALSE truth table