Table 2.

Process parameters of the FBAR stack.

	Interlayer	Bottom	Piezo	Top
Sputtering Deposition
Base Pressure [mBar]	${10}^{-8}$	${10}^{-8}$	${10}^{-8}$	${10}^{-8}$
Power [W]	1000	200	1250	400
Time	8.30′	27′	46′	7′20″
Optical Lithography
Spin velocity [rpm]	-	2000	2000	2000
Temperature of the Pre-Exposure Bake [°C]	-	110	110	110
Time of the Pre-Exposure Bake	-	1′	1′	1′
First exposure [mJ/cm2]	-	140	140	100
Temperature of the Post-Exposure Bake [°C]	-	-	-	120
Flood Exposure [mJ/cm2]	-	-	-	700
Developing	-	1.30′	1.30′	30″
ICP etching
Gas Concentrations [sccm]: BCl${}_3^1$, Ar2	1001, 252	451, 202	1001, 252	-
Time	5′	5′	25′	-