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. 2023 Jan 31;17(3):2912–2922. doi: 10.1021/acsnano.2c11319

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© 2023 The Authors. Published by American Chemical Society

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Device performance compared to previous scientific literature. (a) Our transistor μ values for WS₂, MoS₂, and WSe₂. (b) Our I_on/I_off ratios for WS₂, MoS₂, and WSe₂. (c) Our μ values and I_on/I_off ratios (red stars) compared to those of other TMD networks (green triangles), organic semiconductors (black squares), metal oxides (orange pentagons), carbon nanotubes (blue circles), and graphene networks (yellow hexagons). (d) The device ⟨V_T⟩ and (e) subthreshold slope for WS₂, MoS₂, and WSe₂. (f) The μ and (g) I_on/I_off ratio performance plotted as a function of the subthreshold slope for our electrochemical WS₂, MoS₂, and WSe₂ transistors and compared in more detail to TMD networks for solid-state (green triangles) and ionically gated (purple pentagons) devices. Error is calculated by SDOM in this figure.