Figure 4.

Examination of the effect of ⟨L⟩ on MoS₂ transistor performance. (a, b) Atomic force microscopy statistics of the MoS₂ flakes. (c) Optical microscopy of the transistor channels with ⟨L⟩ from 484 to 1040 nm. (d) Raman spectroscopy of MoS₂ to determine the defect density in the MoS₂ flakes. (e) Transfer characteristics of the MoS₂ flake networks as a function of ⟨L⟩. (f) Average μ and (g) average subthreshold slope of the MoS₂ transistors as a function of ⟨L⟩. Error is calculated by the standard deviation of the mean (SDOM) in each case.