Fig. 1. Structural data of the FeFET.

a Schematic illustration of the FeFET, indicating a source (S), a drain (D), a gate (G), a WO_x channel, a ferroelectric HZO gate dielectric, G access metal line (M1, M2), S access metal line (M3), and D access metal line (M4). b Channel length effect: The dynamic range of $120$ devices with a channel width of 600 nm and a varying channel length from 300 nm to 2 μm. Write pulses with an amplitude ($V_{\mathrm{w}}$) from −6 V to 6 V and width ($t_{\mathrm{w}}$) of 500 μs were applied. The same data for (t_w = 500 ms are available in Supplementary Fig. 6a. The boxes extend from the lower to upper quartile values of the data, with a line at the median. The whiskers extend from the box to show the range of the data. Flier points are those past the end of the whiskers.