Figure 8. SMP108 pathway induces transient memory.
(A) Teacher-student compartments model of second-order conditioning hypothesizes that ‘teacher’ compartment with slow learning rate and persistent memory instructs other compartments with faster learning rate and transient memory dynamics via SMP353/SMP354 and SMP108. (B) Dynamics of memory with optogenetic activation of SMP108 (SS67221), SMP353/354 (SS33917) or various types of DANs. See texts and Materials and methods for explanation of the protocol, and Figure 8—figure supplement 1 for specificity of expression pattern in the central brain and the ventral nerve cord. Means and SEM are displayed. N=8–14. (C) Learning rate defined as a (PI after first 10 s training)/(peak PI during the first 5 training trials) for each driver line. (D) Persistency during training defined as (PI after 5th training)/(peak PI during the first 5 training trials). (E) Persistency of memory defined as (mean of PIs during 12 tests after first training trials)/(peak PI during the first 5 x training trials). (F) Resistance to DAN activation defined as (mean of last three tests following activation LED without odors)/(PI after 5th conditioning in re-reversal phase), which measures both transiency during training and extinction during 12 tests. p<0.05; **, p<0.01; ***, p<0.01; Dunn’s multiple comparison tests following Kruskal-Wallis test; N=8–14. (G) The log-probability ratio of choosing the S2+ against S2− for SS67221 (SMP108) data were fitted best with weights of (0.57, 0.46,0.157,0,0,0) for data of DAN driver lines (MB032B, MB213B, MB312C, MB043C, MB109B, and MB315C).
Figure 8—figure supplement 1. Expression patterns of drivers.
