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. 2023 Feb 20;14:932. doi: 10.1038/s41467-023-36141-8

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© The Author(s) 2023

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a XRD patterns for neat SAM/perovskite films and after treatment with GuaBr or ImBr. Additional experimental details in SI. Indices are for the cubic perovskite phase, and secondary phases are marked: PbI₂ with *, ITO with #, GuaBr-induced phase with ‘G’ and ImBr-induced phase with ‘I’. b Illustration of a mixed-halide 4H polytype, identified following the surface treatments (structure modified from reference Gratia et al.³³). c Highlighted regions comparing XRD for all (i) neat, (ii) GuaBr-treated and (iii) ImBr-treated films, full XRD patterns for TEA-TFSI and PTAA samples is given in Figs. S17–18. d Scanning electron microscopy images of the perovskite surfaces in partially completed devices using (i) Me-4PACz and after treatment with (ii) GuaBr and (iii) ImBr (further SEM for all samples in Fig. S23), with scale bar = 1 μm. e 2D GIWAXS patterns for (i) SAM, f (ii) SAM GuaBr and (iii) SAM ImBr films, collected with a grazing incidence angle of 1°. 1D integrations of the data are given in Fig. S23.