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. 2023 Feb 8;8(7):7017–7029. doi: 10.1021/acsomega.2c07846

Table 5. Upgraded Performance Parameters Values Have Been Compared with Previously Published Reportsa.

number type of analysis formation of cell MoS2 depth (nm) JSC (mA/cm2) VOC (mV) FF (%) η (%) ref
01 Exp. ITO/MoS2 110       0.7 (24)
02 Exp. ITO/MoS2 220       1.8 (24)
03 Exp. ITO/TiO2/MoS2/P3HT   4.7 560 1.3 (25)
04 Exp. n-MoS2 (monolayer)/p-Si   22.32 410 57.26 5.23 (27)
05 Exp. WSe2/MoS2         ∼10 (26)
06 Theo. n-ZnO/n-CdS/p-MoS2 1000       19.62 (28)
07 Theo. ITO/n-ZnSe/p-MoS2   27.84 820 84.6 19.48 (29)
08 Theo. ITO/n-ZnSe/p-MoS2/p+-SnS 1000 29.89 841 85 21.39 (29)
09 Theo. Al/FTO/n-CdS/p-MoS2/Ni 1000 34.11 760 82.80 21.61 (62)
10 Theo. Al/FTO/CdS/MoS2/p+-Sb2S3/Ni 1000 35.20 920 85.51 27.96 (62)
11 Theo. ITO/TiO2/MoS2 800 34.89 793 80.62 22.30 this work
12 Theo. ITO/TiO2/MoS2/In2Te3 800 37.22 1084 82.58 33.32 this work
a

Exp. = experimental work and Theo. = theoretical work.