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. 2023 Feb 16;14(2):460. doi: 10.3390/mi14020460

Figure 3.

Figure 3

(a): Schematic architecture of an OECT. Application of a positive gate voltage induces cation penetration in the OSC with consequent electrochemical doping. (b): Schematic architecture of an EGOFET. Application of negative gate voltage induces the accumulation of anions (cations) in the EDL at the semiconductor/electrolyte interface, which in turn induces an accumulation of holes in the semiconductor.