Figure 11.

(a): OMDs scheme and electrical configuration: gold source and drain electrodes are in contact with a polymeric thin film of polyaniline (PANI). The latter is in direct contact with an electrolytic solution in which a silver wire is inserted as a gate electrode. Source and drain electrodes are biased with a V_SD voltage value, which induces resistivity variations in I_SD and I_GS currents; (b): I_SD response to V_SD variations as a function of the scan speed. In the inset, there are related I_GS responses. Copyright 2021 Wiley. Used with permission from Battistoni S. et al. “The role of the internal capacitance in organic memristive device for neuromorphic and sensing applications.” Advanced Electronic Materials 7.11 (2021): 2100494 John Wiley and Sons [130].