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. 2023 Feb 16;14(2):460. doi: 10.3390/mi14020460

Figure 15.

Figure 15

Electrophysical and structural characterization of the M/PPX/ITO structures. (a): I–V cyclic characteristics showing the typical bipolar resistance-switching behavior of the Cu/PPX/ITO sample during 7 cycles (cycle-to-cycle variability); the average curve is highlighted in bold. (b): I–V characteristics collected in 8 different Cu/PPX/ITO devices (device-to-device variability, the fifth of ten cycles is shown for each); the average characteristics are highlighted in bold. (c): Cumulative probabilities of USET and URESET switching voltages and their coefficients of variation (CV) for ~100 I–V cyclic characteristics measured in the samples with copper (red) and silver (black) top electrodes. (d): Temperature dependence of the low-resistance state of the Cu/PPX/ITO structure. (e): Cross-sectional TEM image of the Cu/PPX/ITO sandwich structure. (f): Enlarged image of the area highlighted by the rectangle in (e), showing roughness of the Cu/PPX interface [154]. Reprinted from Organic Electronics, Vol. 74, A.A. Minnekhanov, B.S. Shvetsov, M.M. Martyshov, K.E. Nikiruy, E.V. Kukueva, M.Y. Presnyakov, P.A. Forsh, V.V. Rylkov, V.V. Erokhin, V.A. Demin, and A.V. Emelyanov, “On the resistive switching mechanism of parylene-based memristive devices”, pages 89–95, Copyright (2019), with permission from Elsevier.