Table 1. Studies Relating to the Doping of Porous BN^a.

dopant	BN structure	dopant content	dopant chemical environment	dopant role in the study	nature of the study
C	porous BN, hBN nanosheets (BNNS)	5–20 wt % C	basal planes	reduce bandgap, add sorption sites, add active catalytic sites	computational + experimental
O	porous BN, BNNS, hBN monolayer	5–20 at. % O	basal planes, edges	reduce bandgap, tune magnetic properties	computational + experimental
C, O	porous BN	8 at. % C,6 at. % O	basal planes	increase specific area and adsorption capacity	experimental
Si	BN nanotubes	0.08 at. % Si experimental, 5 at. % Si computational	basal planes	new synthesis technique, reduce bandgap	computational + experimental
P	porous BN, hBN monolayer	1–5 wt % P	basal planes	add sorption sites, reduce bandgap	computational + experimental
S	hBN, hBN monolayer		basal planes	reduce bandgap, reduce electrical resistivity	computational + experimental
F	hBN monolayer		basal planes	reduce bandgap	computational
F, C, O	porous BN		basal planes	reduce bandgap, add sorption and catalytic sites	computational
Cl	hBN monolayer		basal planes	reduce bandgap	computational
metals (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Mo, Ru, Rh, Pt, Pd, Au, Ag)	porous BN, hBN monolayer, BN nanobelts		composite form within and on monolayer surface basal planes	introduce plasmonic heating, reduce reaction-limiting potential, reduce bandgap, tune magnetic properties, create electric field within material	computational + experimental

^aFull details in the Supporting Information, Table S1.