Figure 2.

Impact of heater distance on heat driven nanotransistor operation. a,b) Drain–source current I _DS measured with respect to the amplitude of the heating current I _heater and the waiting time, employing Heater 1 and Heater 2. AC frequency is 72 Hz. c) $I_{\mathrm{DS}}\text{--}{I}_{\mathrm{heater}}$ characteristics extracted from dataset reported in (a) and (b). The waiting time of the reported curves is 120 s, corresponding to the white dashed lines in panels (a) and (b). d) Analysis of the pinch‐off current $I_{\mathrm{Pinch}\mathrm{-}\mathrm{off}}$ for several values of waiting time. Different mean values for $I_{\mathrm{Pinch}\mathrm{-}\mathrm{off}}$ are found for the operation with the two heaters. Specifically, $I_{\mathrm{Pinch}\mathrm{-}\mathrm{off},\mathrm{Heater}1}=30\pm 3\mu \mathrm{A}$ and $I_{\mathrm{Pinch}\mathrm{-}\mathrm{off},\mathrm{Heater}2}=40\pm 5\mu \mathrm{A}$. e) Analysis of the transconductance for different waiting times, evaluated as the slope of the $I_{\mathrm{DS}}\text{--}{I}_{\mathrm{heater}}$ characteristics in the linear regime. The values for m _linear are comparable within the experimental uncertainty for device operation with both heaters for each value of waiting time.