Files in this Data Supplement:
Supplemental Figure 1 - No gating pore current (Igp) was generated by WT* Nav1.5 expressed in HEK293 cells
Supplemental Figure 2 - Gd3+ inhibited inward Igp fluxing through hNav1.5 DI - DIV voltage sensor mutants
Supplementary Figure 3 - Modification of DIV gating pore currents by ApB was not altered in the presence (A) or absence (B) of TTX
Supplemental Figure 4 - ProTx-II modulates inward Igp generated by DIV VSD mutations in hNav1.7
Supplemental Figure 5 - Double Gly-mutations of the 3rd and 4th gating-charge residues in Nav1.5 DI and DII voltage sensors produced outward Igp in HEK293 cells
Supplemental Figure 6 - Gd3+ inhibited the outward Igp fluxing through hNav1.5 DI (A) and DII (B) voltage sensor mutants
Supplemental Figure 7 - Effect of the HWTX-IV + ApB mixture on inward Igp generated by hNav1.5 DI voltage sensor mutant (R1G/R2G)