This PDF file includes:

• S1. Sensor characteristics of an unfunctionalized CS-FET sensor
  
• S2. Nanoparticle sensing layer sparsity analysis
  
• S3. Effect of silicon channel thickness on CS-FET sensitivity
  
• S4. CS-FET sensor response to temperature, relative humidity, and room temperature recovery characteristics
  
• S5. Individual sensor cycling from low and high gas concentrations
  
• S6. Fabrication process of chemical-sensitive 3.5-nm-thin silicon transistors
  
• S7. Microheater characterization
  
• S8. Transfer characteristics of H₂S, H₂, and NO₂ CS-FETs
  
• fig. S1. Properties of a control CS-FET without any sensing film.
  
• fig. S2. Top-down TEM image of an ultrathin Pd_0.3nmAu_1nm on Si₃N₄ grids.
  
• fig. S3. CS-FET sensor response dependence on silicon channel thickness.
  
• fig. S4. Influence of ambient temperature and humidity on CS-FET sensor response.
  
• fig. S5. High-low-high gas concentration cycling of CS-FET sensors.
  
• fig. S6. CMOS-compatible fabrication process of CS-FETs.
  
• fig. S7. Integrated microheater material selection and characterization.
  
• fig. S8. Typical electrical transfer characteristics (I_D-V_BG) of functionalized CS-FETs.

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