This PDF file includes:

• Supplementary Text
  
• fig. S1. X-ray characterization of a BFO/STO (110) film.
  
• fig. S2. E-beam lithography and metal deposition procedure.
  
• fig. S3. DW device.
  
• fig. S4. BFO/STO (110) coplanar switching kinetics.
  
• fig. S5. Vector PFM of the switched domain.
  
• fig. S6. A schematic of the ferroelectric switching process (top view).
  
• fig. S7. Electrical poling of the BFO/LSMO/STO (110).
  
• fig. S8. Numerical simulation of the switched ferroelastic domain.
  
• fig. S9. Triangular or the arrow-like shape of the switched domain.
  
• fig. S10. Switching via electric field oriented 45° to the in-plane polarization direction.
  
• fig. S11. Sub–100-nm FEDW memory device.
  
• fig. S12. Potential and electric field distribution.
  
• fig. S13. Integration of FEDW memory cell in an array structure.
  
• References (36–38)

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