This PDF file includes:

• Synthesis scheme of the humidity-controlled degradable polymer
  
• Preparation scheme of shadow masks
  
• Preparation scheme of the metal and oxide membranes onto the polymer
  
• Fabrication of the Cu resistor and antenna onto the polymer
  
• Fabrication of the capacitor onto the polymer
  
• Fabrication of the field-effect transistor and inverter onto the polymer
  
• Fabrication of the Schottky diode onto the polymer
  
• Fabrication of the UV detector onto the polymer
  
• Fabrication of the resistive memory onto the polymer
  
• Tuning of components in the polymer preparation
  
• Characterization of the resistor
  
• Characterization of the antenna
  
• Characterization of the capacitor
  
• Characterization of the TFT
  
• Characterization of the inverter
  
• Characterization of the Schottky diode
  
• Characterization of the photodetector
  
• Characterization of the resistive memory device
  
• table S1. Precursors for polyanhydride films with different compositions (the calculation depends on the PEG molar ratio in the mixture).
  
• fig. S1. An optical image of the cross section of the polyanhydride substrate.
  
• fig. S2. The transmittance spectrum of a moisture-sensitive polyanhydride thin film in visible range.
  
• fig. S3. The time-sequential measurements of the FTIR spectra of the polymer thin films during the hydrolysis process under different relative humidity levels.
  
• fig. S4. Optical images showing the time-sequential hydrolysis of the polymer with different compositions of PEG from 0 to 50% at a relative humidity of 90%.
  
• fig. S5. Optical images showing the time-sequential hydrolysis of the polymer with different compositions of PEG from 0 to 50% at a relative humidity of 45%.
  
• fig. S6. Optical images showing the time-sequential hydrolysis of the polymer with different compositions of PEG from 0 to 50% at a relative humidity of 0%.
  
• fig. S7. Optical images showing the time-sequential hydrolysis of the polymer substrates with different film thicknesses under different relative humidity levels.
  
• fig. S8. Cu antenna.
  
• fig. S9. MgO-based capacitor.
  
• fig. S10. IGZO-based TFT.
  
• fig. S11. Logic gate inverter.
  
• fig. S12. IGZO-based diode.
  
• fig. S13. IGZO-based photodetector.
  
• fig. S14. IGZO-based resistive memory.

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