This PDF file includes:

• fig. S1. Chemical and structural characterization.
  
• fig. S2. Device morphology and optoelectronic transport.
  
• fig. S3. Control experiments on few-layer MoS₂.
  
• fig. S4. Photoresponse in PbS nanoplate with an 808-nm laser illumination.
  
• fig. S5. The optoelectronic transport and optical memory.
  
• fig. S6. Photoresponse performance.
  
• fig. S7. V_g pulse–dependent erasing current.
  
• fig. S8. Optoelectronic transport and on/off ratio.
  
• fig. S9. Persistent photocurrent as a function of time after the laser pulse switches off.
  
• fig. S10. Optoelectronic transport and optical memory.
  
• fig. S11. Number of transferred electrons as a function of the Fermi level shift.
  
• table S1. Memory performance of five devices.
  
• note S1. Theoretical simulation of carrier injection to MoS₂.
  
• note S2. Dynamics analysis of V_g pulse erasing.
  
• note S3. Roles of disorder states on the optical memory.
  
• note S4. Photothermal effect or Schottky barrier effect.
  
• References (36–43)

Download PDF