This PDF file includes:

• Section S1. Supplementary for device fabrication
• Section S2. Characterization of the devices
• Section S3. Supplementary for theoretical calculations
• Section S4. Supplementary charge transport in PCP and OPE3 devices
• Section S5. The performances for compared devices
• Fig. S1. Fabrication procedure for the vertical molecular transistor.
• Fig. S2. AFM and Raman characterizations.
• Fig. S3. HR-XPS characterizations.
• Fig. S4. Supplementary theoretical calculations.
• Fig. S5. Charge transport in PCP devices.
• Fig. S6. Charge transport in OPE3 devices.
• Fig. S7. Temperature-dependent performances for PCP and OPE3.
• Fig. S8. Supplementary gate performances for PCP and OPE3 transistors.
• Fig. S9. Gate performances for compared graphene and C18 devices.
• Table S1. Statistic conductance for PCP and OPE3 junctions.
• References (33, 34)

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