This PDF file includes:

• Supplementary Text
• Section S1. Calculation of electric field dispersion relationships
• Section S2. Rate equation analysis
• Section S3. Strain analysis
• Fig. S1. Calculation of electric field dispersion relationships for single InP nanowires dispersed on Au/SiO₂/Si substrate at the wavelength of 1550 nm.
• Fig. S2. Calculation of electric field dispersion relationships for single InP nanowires dispersed on SiO₂/Si substrate at the wavelength of 1550 nm.
• Fig. S3. Rate equation analysis of experimental data.
• Fig. S4. PL spectra of a nanowire under stimulated emission.
• Fig. S5. Time-resolved decay of nanowire lasing and system function.
• Fig. S6. Delay, lifetime, lasing peak line width and shift measured as a function of pumping power.
• Fig. S7. Lasing spectra recorded at different period (1 week) for a same nanowire.
• Table S1. Parameters used in rate equation analysis.
• Table S2. Thickness of a single InAs QDisk versus calculated bandgap energy (without strain) and PL peak range of spontaneous emission (compressively-strain in MQD InP/InAs heterostructure nanowires) at room temperature.

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