This PDF file includes:

• Section S1. Evolution process of in-plane guided mode to out-plane OAM mode
• Section S2. Device fabrication process
• Section S3. Simulated intensity distribution matrix
• Fig. S1. Simulated 3D-FDTD results of electric field distributions (real part of electric field components) along the waveguide (from waveguide region to grating region) and at different height of the fork grating region (z = 0.1, 0.2, 0.3, 0.4, 0.5 μm, far field).
• Fig. S2. Illustration of the device fabrication process of the silicon OAM generator (spin coating, electron-beam lithography, inductively coupled plasma, photoresist removal).
• Fig. S3. Simulated 4 × 4 intensity distribution matrix for the generation of polarization diversity OAM modes (x-pol. OAM₊₁, x-pol. OAM₋₁, y-pol. OAM₊₁, y-pol. OAM₋₁).

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