This PDF file includes:

• Section S1. Determining doping level and chemical potential in graphene
• Section S2. Selective carrier extraction from Gr/WS₂ heterostructures and charge recombination retardation
• Section S3. QY calibration using WSe₂/WS₂ heterostructure and direct high-energy excitation
• Section S4. Absorbed photon density calculation
• Section S5. Calculation with 1μPTE model and 2μPTE model
• Section S6. Hot electron transfer from photoexcited graphene to WSe₂
• Section S7. Additional figures
• Fig. S1. Determining doping level and chemical potential in graphene.
• Fig. S2. Selective carrier extraction and charge recombination retardation.
• Fig. S3. CT in WSe₂/WS₂ heterostructure.
• Fig. S4. TR measurements of Gr/WS₂ under above-gap excitation.
• Fig. S5. Beam profile and absorption properties of heterostructures.
• Fig. S6. Calculated carrier temperature and chemical potential with different models.
• Fig. S7. Calculated injection electron density.
• Fig. S8. Hot electron transfer from photoexcited graphene to WSe₂.
• Fig. S9. PL spectra of WS₂ monolayer and Gr/WS₂ heterostructure.
• Fig. S10. All TR kinetics of Gr/WS₂ heterostructure at WS₂ A exciton bleach, at different excitation photon energies and densities.
• Fig. S11. TR results from another Gr/WS₂ sample.
• Fig. S12. TR spectra of Gr/MoS₂ and Gr/MoSe₂ heterostructures.
• References (45–48)

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