Figure 1.

Quantum mechanical modeling of charge carriers in quantum dot artificial atoms. (a) Cross-sectional views of a 3.8 nm CdTe quantum dot and its 1S(e), 1S(h), and 2S(h) wavefunctions; (b) corresponding wavefunction (Ψ) and radial distribution function (Ψ²r²) plots; and (c) steady-state absorption spectrum showing the 1^st exciton 1S(h)→1S(e) and the 2^nd exciton 2S(h)→1S(e) transitions. The energy band diagram in the inset depicts these absorption transitions between quantum-confined electron (e) and hole (h) energy states. Black lines indicate potential energy wells in the conduction band (CB) and valence band (VB). For clarity, energy levels are not drawn to scale and higher energy levels are omitted.