TABLE 1.
Properties of the AtMSL10 TM6 mutants. Conductance at −100 mV
| Mutation | Conductance at −100 mV | Conductance compared to WT | Open state | Gating characteristics | Cell death | |
|---|---|---|---|---|---|---|
| MSL10 WT | None | 119.4 ±4.0 pS | 1.0 WT | Stable | Strong hysteresis | Strong |
| Phe residues | F544V | 114.8 ±4.0 pS | 1.0 WT | Stable | ||
| F553W | 121.8 ±4.3 pS | 1.0 WT | Slight flicker | |||
| F553L | 78.0 ±4.4 pS | 0.65 WT | Slight flicker | No hysteresis | ||
| F553V | N/A | N/A | N/A | N/A | Strong | |
| F563L | 117.7 ±5.4 pS | 1.0 WT | Stable | High gating threshold No hysteresis | ||
| Putative Gly kink | G556A | 106.0 ±4.4 pS | 0.9 WT | Stable | ||
| G556V | N/A | N/A | N/A | N/A | Strong | |
| Change to MSL8 | L548V | 114.3 ±5.0 pS | 1.0 WT | Stable | ||
| A550L | 112.7 ±4.6 pS | 1.0 WT | Stable | |||
| L562V | 119.2 ±6.1 pS | 1.0 WT | Stable | High gating threshold | ||
| I554V | 121.8 ±8.1 pS | 1.0 WT | Stable | |||
| I554S | 61.1 ±4.9 pS | 0.5 WT | Flickery | Strong |