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Scientific Reports logoLink to Scientific Reports
. 2023 Jul 31;13:12417. doi: 10.1038/s41598-023-39478-8

Two optimized novel potential formulas and numerical algorithms for m×n cobweb and fan resistor networks

Wenjie Zhao 1, Yanpeng Zheng 1,, Xiaoyu Jiang 2, Zhaolin Jiang 3,
PMCID: PMC10390589  PMID: 37524723

Abstract

The research of resistive network will become the basis of many fields. At present, many exact potential formulas of some complex resistor networks have been obtained. Computer numerical simulation is the trend of computing, but written calculation will limit the time and scale. In this paper, the potential formulas of a m×n scale cobweb resistor network and fan resistor network are optimized. Chebyshev polynomial of the second class and the absolute value function are used to express the novel potential formulas of the resistor network, and described in detail the derivation process of the explicit formula. Considering the influence of parameters on the potential formulas, several idiosyncratic potential formulas are proposed, and the corresponding three-dimensional dynamic images are drawn. Two numerical algorithms of the computing potential are presented by using the mathematical model and DST-VI. Finally, the efficiency of calculating potential by different methods are compared. The advantages of new potential formulas and numerical algorithms by the calculation efficiency of the three methods are shown. The optimized potential formulas and the presented numerical algorithms provide a powerful tool for the field of science and engineering.

Subject terms: Mathematics and computing, Physics

Introduction

Tan1 creatively established the mathematical model of cobweb and fan resistor networks, according to this model, gave the incomparable analytical potential formula in theory. This is a breakthrough work, and its theoretical significance and application prospects are huge. As is well-known, classical physics is based on the analysis of physics mathematical models of physical processes. Computers have given physicists and engineers a new way to analyze and apply physical formulas and mathematical models that has revolutionized science and engineering outside the university. Everything changes if the computer is used to analyze and apply physical formulas and mathematical models. In addition, experts in engineering and scientific computing know that to improve the computational efficiency of the potential to help computational physicists and engineers solve major scientific and technical problems, it is a good idea to optimize the perfect analytical potential formula given in theory to improve the computational efficiency. In order to improve the calculation performance and scale of the formula. In this paper, based on the original potential formula, we re-represent it with the Chebyshev polynomial of the second class and the absolute value function, which improves the computational efficiency, and design the numerical algorithms can be used to the calculating potential for large-scale resistor networks.

In the process of scientific development, many complex problems have arisen, which often require simple models to solve. According to the research results of resistor network model211 and neural network model1218, ideas can be obtained on many complex problems. In the past many years, through the research results of Green’s function, Laplace equation, Poisson equation, finite and infinite dimensional resistor network and Laplace matrix (LM) method and so on811,1932, the foundation of resistor network research has been laid. Shi et al.12,13 studied a new discrete time recurrent neural network and its application to manipulators. Sun et al.14,15 studied the theory and application of noise tolerance zeroing neural network. And Jin et al.1618 proposed a modified Zhang neural network (MZNN) model for the solution of time-varying quadratic programing (TVQP).

In the past few years, Tan et al.3353 proposed a simpler recursive transformation (RT) method than LM method in the research of resistance network. It simplified the Laplacian matrix in two directions to the Laplacian matrix in one direction. In 2014, Tan et al.37 solved the potential formula of spherical resistance network for the first time. Since 2015, Tan et al.3444 has studied the resistance network model by RT method. After 2020, Tan et al.4553 made more in-depth research on resistance network. Since RT method requires using a tridiagonal matrix to construct a mathematical model, and the analytical potential formula must be expressed by using the exact eigenvalues of this tridiagonal matrix. So the exact eigenvalues of the tridiagonal matrix need to be found. Tridiagonal matrices are used in many areas of science and engineering, and there are many good conclusions about it5461.

In 2017, Tan1 used RT-V method for the first time to study cobweb network and fan network. In Figs. 1 and 2, the resistance on the warp and weft lines is r0 and r, where m and n are the scale of the resistor network, it contains m rows and n columns. Point O(0,0)=0 is defined as the origin of the resistor network. The potential formula Um×n(x,y) of any node d(xy) in the m×n cobweb network is shown as

Um×n(x,y)J=4r2m+1i=1mgx1,x(i)Sy1,i-gx2,x(i)Sy2,iλin+λ¯in-2Sy,i, 1
gxs,x(i)=Fn-|xs-x|+F|xs-x|. 2

The potential formula Um×n(x,y) of any node d(xy) in the m×n fan network is shown as

Um×n(x,y)J=4r2m+1i=1mβx1,x(i)Sy1,i-βx2,x(i)Sy2,i(ti-2)Fn+1(i)Sy,i, 3
βxs,x(i)=ΔFxs(i)ΔFn-x(i)ifxxs,ΔFx(i)ΔFn-xs(i)ifxxs, 4

where θi=(2i-1)π(2m+1),Syk,i=sin(ykθi)

Fk(i)=λik-λ¯ikλi-λ¯i, 5
λi=1+h-hcosθi+(1+h-hcosθi)2-1,λ¯i=1+h-hcosθi-(1+h-hcosθi)2-1, 6
ti=2+2h-2hcosθi, 7

the parameter h=rr0 is defined.

Figure 1.

Figure 1

A 8×4 cowbeb resistor network containing 8×4 nodes and a zero potential point O.

Figure 2.

Figure 2

A 10×6 fan resistor network containing 10×6 nodes and a zero potential point O.

Novel formulas of potential represented by Chebyshev polynomials

This section presents the re-expressed potential formulas (1) and (3)1 of the resistor network. The potential formula expressed by the Chebyshev polynomial of the second class62 can reduce the running time of computer simulation.

Assume that the current J is input from d1(x1,y1) and output from d2(x2,y2). The potential formula of any node d(xy) in the m×n cobweb resistor network is

Um×n(x,y)J=4r2m+1ι=1mμx1,x(ι)Sy1,ι-μx2,x(ι)Sy2,ιUn(ι)-Un-2(ι)-2Sy,ι, 8

where

μxs,x(ι)=Un-|xs-x|-1(ι)+U|xs-x|-1(ι),s=1,2. 9

The potential formula of any node d(xy) in the m×n fan resistor network is

Um×n(x,y)J=4r2m+1ι=1mεx1,x(ι)Sy1,ι-εx2,x(ι)Sy2,ι(ωι-2)Un(ι)Sy,ι, 10

where

εxs,x(ι)=(U-0.5(ι))2(Un-|xs-x|+1(ι)-Un-|xs-x|-1(ι)+Un-xs-x(ι)-Un-xs-x-2(ι)),s=1,2, 11
Syk,ι=sin(yk(2ι-1)π2m+1),k=1,2, 12
ωι=2+2rr0-2rr0cos(2ι-1)π2m+1, 13
Uν(ι)=Uν(ι)(coshϕι)=sinh(ν+1)ϕιsinh(ϕι),coshϕι=ωι2,ωι2>1,ϕι>0, 14
v=n-|xs-x|-1,|xs-x|-1,n-2,n-|xs-x|+1,n-xs-x,n-xs-x-2,n,-0.5,s=1,2,ι=1,2,,m.

We set the node voltage at point O(0,0) to 0, and the formula for calculating the potential of any node is described as

Um×n(x,y)=Vx(y),Um×n(x,y)=Vx(y),V0(0)=0, 15

where Vx(y) and Vx(y) are denoted by the node voltage of any node.

Horadam sequence and discrete sine transform

In this section, we introduce the explicit formula of Horadam sequence which is expressed by the Chebyshev polynomial of the second class and the sixth kind of discrete sine transform.

A second-order recurrence sequence Wv is called a Horadam sequence if

Wv=dWv-1-qWv-2,W0=a,W1=b, 16

where vN,v2,a,b,d,qC, N is set of all nonnegative integers and C is the set of all complex numbers.

The explicit formula of Horadam sequence expressed by the Chebyshev polynomial of the second class is63

Wv=(q)vbqUv-1d2q-aUv-2d2q, 17

where Uv is the Chebyshev polynomial of the second class62, i.e.

Uv=Uv(cosϕ)=sin(v+1)ϕsinϕ,cosϕ=d2q,ϕC. 18

If d2q>1, the Chebyshev polynomial of the second class is re-described by hyperbolic functions, then Eq. (18) is transformed into

Uv=Uv(coshϕ)=sinh(v+1)ϕsinhϕ,coshϕ=d2q,ϕR, 19

where R is the set of all real numbers.

First, we will present the derivation of Eq. (5) represented by the Chebyshev polynomial of the second class.

Remark 1

It can be obtained from Eq. (6) that λι+λ¯ι=ωι and λι·λ¯ι=1. Adding these conditions to Eq. (16), we get the following special Horadam sequence

Fv(ι)=ωιFv-1(ι)-Fv-2(ι),F0(ι)=0,F1(ι)=1, 20

where d=ωι>2,q=1, Fv(ι) and ωι are expressed in Eqs. (5) and (13), respectively. By replacing the expression of Eq. (5), with the results of Eq. (19), we have

Fv(ι)=λιv-λ¯ιvλι-λ¯ι=Uv-1(ι)(ωι2). 21

Secondly, we will give the derivation of λιn+λ¯ιn expressed by the Chebyshev polynomial of the second class.

Remark 2

Let

Bn(ι)=λιn+λ¯ιn, 22

where B0(ι)=2,B1(ι)=ωι.

Then the recursive relation of Bn(ι) is expressed as

Bn(ι)=ωιBn-1(ι)-Bn-2(ι),B0(ι)=2,B1(ι)=ωι, 23

where d=ωι,q=1, ωι and Bn(ι) are expressed in Eqs. (13) and (22), respectively.

By Eqs. (17) and (19), Bn(ι) is represented as follows

Bn(ι)=λιn+λ¯ιn=ωιUn-1(ωι2)-2Un-2(ωι2)=Un(ωι2)-Un-2(ωι2). 24

Next, we will show the derivation of replacing Eq. (4) in terms of piecewise functions with Eq. (11) in terms of absolute value functions.

Remark 3

For Eq. (4), when xxs

βxs,x(ι)=(Fxs+1(ι)-Fxs(ι))(Fn-x+1(ι)-Fn-x(ι))=λιn-x+xs+2+λ¯ιn-x+xs+2-λιn-x+xs+1-λ¯ιn-x+xs+1(λι-λ¯ι)2-λιn-x+xs+1+λ¯ιn-x+xs+1-λιn-x+xs-λ¯ιn-x+xs(λι-λ¯ι)2+λιn-x-xs+1+λ¯ιn-x-xs+1-λιn-x-xs-λ¯ιn-x-xs(λι-λ¯ι)2-λιn-x-xs+λ¯ιn-x-xs-λιn-x-xs-1-λ¯ιn-x-xs-1(λι-λ¯ι)2=(λι-1)λιn-x+xs+1+(λ¯ι-1)λ¯ιn-x+xs+1-(1-λ¯ι)λιn-x+xs+1-(1-λι)λ¯ιn-x+xs+1(λι-λ¯ι)2+(λι-1)λιn-x-xs+(λ¯ι-1)λ¯ιn-x-xs-(1-λ¯ι)λιn-x-xs-(1-λι)λ¯ιn-x-xs(λι-λ¯ι)2=(λι+λ¯ι-2)(λιn-x+xs+1+λ¯ιn-x+xs+1+λιn-x-xs+λ¯ιn-x-xs)(λι-λ¯ι)2=(λι0.5-λ¯ι0.5)2(λι-λ¯ι)2λιn-x+xs+1+λ¯ιn-x+xs+1+λιn-x-xs+λ¯ιn-x-xs=(F0.5(ι))2(Fn-(x-xs)+2(ι)-Fn-(x-xs)(ι)+Fn-x-xs+1(ι)-Fn-x-xs-1(ι)). 25

Similarly, when xxs

βxs,x(ι)=(Fx+1(ι)-Fx(ι))(Fn-xs+1(ι)-Fn-xs(ι))=λιn-xs+x+2+λ¯ιn-xs+x+2-λιn-xs+x+1-λ¯ιn-xs+x+1(λι-λ¯ι)2-λιn-xs+x+1+λ¯ιn-xs+x+1-λιn-xs+x-λ¯ιn-xs+x(λι-λ¯ι)2+λιn-xs-x+1+λ¯ιn-xs-x+1-λιn-xs-x-λ¯ιn-xs-x(λι-λ¯ι)2-λιn-xs-x+λ¯ιn-xs-x-λιn-xs-x-1-λ¯ιn-xs-x-1(λι-λ¯ι)2=(λι-1)λιn-xs+x+1+(λ¯ι-1)λ¯ιn-xs+x+1-(1-λ¯ι)λιn-xs+x+1-(1-λι)λ¯ιn-xs+x+1(λι-λ¯ι)2+(λι-1)λιn-xs-x+(λ¯ι-1)λ¯ιn-xs-x-(1-λ¯ι)λιn-xs-x-(1-λι)λ¯ιn-xs-x(λι-λ¯ι)2=(λι+λ¯ι-2)(λιn-xs+x+1+λ¯ιn-xs+x+1+λιn-xs-x+λ¯ιn-xs-x)(λι-λ¯ι)2=(λι0.5-λ¯ι0.5)2(λι-λ¯ι)2(λιn-xs+x+1+λ¯ιn-xs+x+1+λιn-xs-x+λ¯ιn-xs-x)=(F0.5(ι))2(Fn-(xs-x)+2(ι)-Fn-(xs-x)(ι)+Fn-xs-x+1(ι)-Fn-xs-x-1(ι)). 26

Combining Eqs. (25) and (26), Eq. (4) is re-expressed by the absolute value functions as

βxs,x(i)=(F0.5(ι))2(Fn-|xs-x|+2(ι)-Fn-|xs-x|(ι)+Fn-xs-x+1(ι)-Fn-xs-x-1(ι)),s=1,2, 27

By Eqs. (21), (27) and (11) in terms of the Chebyshev polynomial of the second class and absolute value function is obtained.

Using Eqs. (19), (21) and (24), the potential formulas (8) and (10) are obtained.

In order to achieve the fast calculation of numerical simulation, we utilize the sixth kind of discrete sine transform to diagonalize the perturbed tridiagonal matrix Am1.

Am=2+2h-h00-h2+2h-h00-h2+2h-h00-h2+hm×m, 28

where h=rr0.

The eigenvectors ω1,,ωm of matrix Am are expressed as

ωι=2+2h-2hcos(2ι-1)π2m+1),ι=1,2,,m, 29

and the corresponding eigenvectors α(j)=(α1(j),α2(j),,αm(j))T are expressed as

αk(j)=22m+1sin(2j-1)kπ2m+1,k=1,2,,m,j=1,2,,m. 30

As is known to all, if the orthogonal matrix SmVI is the sixth kind of discrete sine transform (DST-VI)6468, where

SmVI=22m+1sin(2j-1)kπ2m+1k,j=1m, 31

then

(SmVI)-1=(SmVI)T=SmVII, 32

where (SmVI)T is the transpose of the matrix SmVI and SmVII is the seventh kind of discrete sine transform (DST-VII).

The process of realizing the orthogonal diagonalization of matrix Am by SmVI is as follows

(SmVI)-1Am(SmVI)=diag(ω1,ω2,,ωm), 33

i.e.,

Am=(SmVI)diag(ω1,ω2,,ωm)(SmVI)-1, 34

where ωι is given by Eq. (29).

By Kirchhoff’ s law and the node voltage, Tan1 gave a matrix equation model as follows

Vv+1=AmVv-Vv-1-rIv, 35

where Am in Eq. (28), Vv and Iv are vectors of length m×1, in which δk,v(v=k)=1, δk,v(vk)=0.

Vv=[Vv(1),Vv(2),...Vv(m)]T(0vn), 36
Iv(ι)=J(δx1,v-δx2,v). 37

Since Eq. (35) cannot be directly calculated. Equation (35) is transformed by SmVI method. The process of transformation is as follows.

(SmVI)-1Vv=(SmVI)TVv=Cv,Vv=SmVICv, 38

where Cv is also a m×1 vector

Cv=[cv(1),cv(2),...,cv(m)]T(0vn). 39

Remark 4

Tan1 proposed the node voltage formula of the cobweb network as follows

Vk(y)=J4r2m+1i=1mgx1,x(i)Sy1,i-gx2,x(i)Sy2,iλin+λ¯in-2sin(yθi), 40

where gx1,x(i) is expressed in Eq. (2), λin and λ¯in is in Eq. (6), θi=(2i-1)π(2m+1), Syk,i=sin(ykθi),k=1,2.

According to Eqs. (2), (21), (24) and (40), we re-express the node voltage formula by the Chebyshev polynomial of the second class as follows

Vv(y)=J4r2m+1ι=1mμx1,x(ι)Sy1,ι-μx2,x(ι)Sy2,ιUn(ι)-Un-2(ι)-2Sy,ι, 41

where μxs,x(ι),s=1,2 is same as Eq. (9), Uv(ι) is same as Eq. (14), and Sys,ι is same as Eq. (12).

According to Eqs. (38), (39) and (41), we can get the analytic formula of cx(ι) as

cx(ι)=2rJ2m+1μx1,x(ι)Sy1,ι-μx2,x(ι)Sy2,ιUn(ι)-Un-2(ι)-2,(0xn), 42

Tan1 proposed the node voltage formula of the fan network as follows

Vk(y)=J4r2m+1i=1mβx1,x(i)Sy1,i-βx2,x(i)Sy2,i(ti-2)Fn+1(i)sin(yθi), 43

where βxs,x(i) is expressed in Eq. (4), Fk(i) is given in Eq. (5), ti is given in Eq.  (7), θi=(2i-1)π(2m+1), Syk,i=sin(ykθi),k=1,2.

According to Eqs. (4), (7), (13), (21) and (43), we re-express the node voltage formula by the Chebyshev polynomial of the second class as follows

Vv(y)=J4r2m+1ι=1mεx1,x(ι)Sy1,ι-εx2,x(ι)Sy2,ι(ωι-2)Un(ι)Sy,ι, 44

where εxs,x(ι),s=1,2 is same as Eq.  (11), Sys,ι is same as Eq. (12), ωι is same as Eq. (13) and Uv(ι) is same as Eq. (14).

According to Eqs. (38), (39) and (44), we can get the analytic formula of cx(ι) as

cx(ι)=2rJ2m+1εx1,x(ι)Sy1,ι-εx2,x(ι)Sy2,ι(ωι-2)Un(ι),(0xn), 45

Displaying of some special and interesting potential formulae

According to the obtained resistor network potential formulas (8) and (10) which contain multiple variables, this chapter analyzed the influence of different variables on the resistance network potential formula from two directions, assigned corresponding variables according to the conditions, and drew a three-dimensional dynamic view intuitive display.

Idiosyncratic potential formulas with the change of current input point and output point position

This section discusses the influence of changes in the position of the input and output points of the current in the resistor network on the potentials, as reflected in the three-dimensional dynamic view.

Idiosyncratic potential formula 1. If the current J flows in point d1(x1,y1) and out of d2(x2,y2)=O(0,0), then a novel potential formula of the cobweb resistor network can be rewritten as

Um×n(x,y)J=4r2m+1ι=1mμx1,x(ι)Sy1,ιUn(ι)-Un-2(ι)-2Sy,ι, 46

and a novel potential formula of the fan resistor network can be rewritten as

Um×n(x,y)J=4r2m+1ι=1mεx1,x(ι)Sy1,ι-εx2,x(ι)Sy2,ι(ωι-2)Un(ι)Sy,ι, 47

where μxs,x(ι),s=1,2 is defined in Eq.  (9), εxs,x(ι),s=1,2, is defined in Eq. (11), Uv(ι) is defined in Eq. (14), and Sys,ι is defined in Eq. (12).

Let m=n=60,J=10,x1=y1=20,x2=y2=0, and r0=r=1 in Eqs. (46) and (47), respectively. Then a special potential formula of the cobweb resistor network is obtained as follows

U60×60(x,y)J=4121ι=160μ20,x(ι)S20,ιU60(ι)-U58(ι)-2Sy,ι, 48

and a special potential formula of the fan resistor network is obtained as follows

U60×60(x,y)J=4121ι=160ε20,x(ι)S20,ι(ωι-2)U60(ι)Sy,ι, 49

where

μ20,x(ι)=U59-|20-x|(ι)+U|20-x|-1(ι), 50
ε20,x(ι)=(U-0.5(ι))2(U61-|20-x|(ι)-U59-|20-x|(ι)+U40-x(ι)-U38-x(ι)), 51
ωι=4-2cos(2ι-1)π121, 52
S20,ι=sin((40ι-20)π121), 53
Uν(ι)=Uν(ι)(coshϕι)=sinh(ν+1)ϕιsinh(ϕι),coshϕι=ωι2, 54
Sy,ι=siny(2ι-1)π121, 55
v=61-|20-x|,59-|20-x|,|20-x|-1,40-x,38-x,60,58,-0.5.ι=1,2,,60.

And the three-dimensional dynamic views for the generative process of the potential graph are shown in Figs. 3 and 4, respectively.

Figure 3.

Figure 3

The potential graph for U60×60(x,y)/J with the cobweb resistor network in Eq. (48).

Figure 4.

Figure 4

The potential graph for U60×60(x,y)/J with the fan resistor network in Eq. (49).

Idiosyncratic potential formula 2. If the current J flows in from point d1(x1,y1) and out of d2(x2,y1), then a novel potential formula of the cobweb resistor network can be rewritten as

Um×n(x,y)J=4r2m+1ι=1m(μx1,x(ι)-μx2,x(ι))Sy1,ιUn(ι)-Un-2(ι)-2Sy,ι, 56

and a novel potential formula of the fan resistor network can be rewritten as

Um×n(x,y)J=4r2m+1ι=1m(εx1,x(ι)-εx2,x(ι))Sy1,ι(ωι-2)Un(ι)Sy,ι, 57

where μxs,x(ι), εxs,x(ι), Sys,ι and Uv(ι) are same as Eqs. (9), (11), (12) and (14), respectively.

Let m=n=60, J=10, y1=y2=x1=20, x2=40, and r0=r=1 in Eqs. (56) and (57), respectively. Then an idiosyncratic potential formula of the cobweb resistor network is given by

Um×n(x,y)J=4121ι=160(μ20,x(ι)-μ40,x(ι))S20,ιU60(ι)-U58(ι)-2Sy,ι, 58
μ40,x(ι)=U59-|40-x|(ι)+U|40-x|-1(ι), 59

and an idiosyncratic potential formula of the fan resistor network is given by

Um×n(x,y)J=4121ι=160(ε20,x(ι)-ε40,x(ι))S20,ι(ωι-2)U60(ι)Sy,ι, 60
ε40,x(ι)=(U-0.5(ι))2(U61-|40-x|(ι)-U59-|40-x|(ι)+U20-x(ι)-U18-x(ι)), 61

where μ20,x(ι), ε20,x(ι), ωι, S20,ι and Sy,ι are expressed in Eqs. (50), (51), (52), (53) and (55), respectively, with v=61-|20-x|,61-|40-x|,59-|20-x|,59-|40-x|,|20-x|-1,|40-x|-1,40-x,38-x,20-x,18-x,60,58,-0.5,ι=1,2,,60.

And the three-dimensional dynamic views for the generative process of the potential graph are shown in Figs. 5 and 6 by Matlab.

Figure 5.

Figure 5

The potential graph for U60×60(x,y)/J with the cobweb resistor network in Eq. (58).

Figure 6.

Figure 6

The potential graph for U60×60(x,y)/J with the fan resistor network in Eq. (60).

Idiosyncratic potential formula 3. If the current J/h flows in from point ds(xs,y1)(s=1,2,,h) and the current J out of d2(x2,y1), then a novel potential formula of the cobweb resistor network can be rewritten as

Um×n(x,y)J=4r2m+1ι=1ms=1hμxs,x(ι)Sy1,ι-μx2,x(ι)Sy2,ιUn(ι)-Un-2(ι)-2Sy,ι, 62

and a novel potential formula of the fan resistor network can be rewritten as

Um×n(x,y)J=4r2m+1ι=1ms=1hεxs,x(ι)Sy1,ι-εx2,x(ι)Sy2,ι(ωι-2)Un(ι)Sy,ι, 63

where μxs,x(ι), εxs,x(ι), Sys,ι and Uv(ι) are same as Eqs. (9), (11), (12) and (14), respectively.

Let m=n=60,J=10,x1=y1=20,x2=y2=40, r0=r=1, and h=10 in Eqs. (62) and (63), respectively. Then an idiosyncratic potential formula of the cobweb resistor network is represented by

Um×n(x,y)J=4121ι=160s=110μxs,x(ι)S20,ι-μ40,x(ι)S40,ιU60(ι)-U58(ι)-2Sy,ι, 64

and an idiosyncratic potential formula of the fan resistor network is represented by

Um×n(x,y)J=4121ι=160s=110εxs,x(ι)S20,ι-ε40,x(ι)S40,ι(ωι-2)U60(ι)Sy,ι, 65
S40,ι=sin(80ι-40)π121, 66

where μ40,x(ι), ε40,x(ι), ωι, S20,ι and Sy,ι are expressed in Eqs. (59), (61), (52), (53) and (55), respectively, with v=61-|s-x|,61-|40-x|,59-|s-x|,59-|40-x|,|s-x|-1,|40-x|-1,60-s-x,58-s-x,20-x,18-x,60,58,-0.5,s=1,2,,10.ι=1,2,,60.

And the three-dimensional dynamic views for the generative process of the potential graph are shown in Figs. 7 and 8 by Matlab.

Figure 7.

Figure 7

The potential graph for U60×60(x,y)/J with the cobweb resistor network in Eq. (64).

Figure 8.

Figure 8

The potential graph for U60×60(x,y)/J with the fan resistor network in Eq. (65).

Idiosyncratic potential formulas with the change of resistivity h (h=rr0) in resistor network

This section discusses the effect of changes in resistivity h in the resistor network on the potential formulas as reflected in the three-dimensional dynamic view.

Let m=n=60,J=10,x1=y1=20,x2=y2=40, and r=1 in Eqs. (8) and (10), respectively. Then an idiosyncratic potential formula of the cobweb resistor network is expressed by

U60×60(x,y)J=4121ι=160μ20,x(ι)S20,ι-μ40,x(ι)S40,ιU60(ι)-U58(ι)-2Sy,ι, 67

and an idiosyncratic potential formula of the fan resistor network is expressed by

U60×60(x,y)J=4121ι=160ε20,x(ι)S20,ι-ε40,x(ι)S40,ι(ωι-2)U60(ι)Sy,ι, 68

where μ20,x(ι), μ40,x(ι), ε20,x(ι), ε40,x(ι), S20,ι, S40,ι and Sy,ι are expressed in Eqs. (50), (59), (51), (61), (53), (66) and (55), respectively.

Idiosyncratic potential formula 4. When r0=10, h=0.1 is got, as h changes, ωι and ϕι are obtained as follows, respectively

ωι=2.2-0.2cos(2ι-1)π121,coshϕι=1.1-0.1cos(2ι-1)π121. 69

Equation (69) is combined with Eqs. (67) and (68), respectively, and the three-dimensional dynamic views for the generative process of the potential graph are shown in Figs. 9 and 10, respectively.

Figure 9.

Figure 9

The potential graph for U60×60(x,y)/J with the cobweb resistor network by Eq. (67).

Figure 10.

Figure 10

The potential graph for U60×60(x,y)/J with the fan resistor network by Eq. (68).

Idiosyncratic potential formula 5. When r0=1, h=1 is got, as h changes, ωι and ϕι are obtained as follows, respectively

ωι=4-2cos(2ι-1)π121,coshϕι=2-cos(2ι-1)π121. 70

Equation (70) is combined with Eqs. (67) (68), respectively, and the three-dimensional dynamic views for the generative process of the potential graph are shown in Figs. 11 and 12, respectively.

Figure 11.

Figure 11

The potential graph for U60×60(x,y)/J with the cobweb resistor network by Eq. (67).

Figure 12.

Figure 12

The potential graph for U60×60(x,y)/J with the fan resistor network by Eq. (68).

Idiosyncratic potential formula 6. When r0=0.1, h=10 is got, as h changes, ωι and ϕι are obtained as follows, respectively

ωι=22-20cos(2ι-1)π121,coshϕι=11-10cos(2ι-1)π121. 71

Equation (71) is combined with Eqs. (67) and (68), respectively, and the three-dimensional dynamic views for the generative process of the potential graph are shown in Figs. 13 and 14, respectively.

Figure 13.

Figure 13

The potential graph for U60×60(x,y)/J with the cobweb resistor network by Eq. (67).

Figure 14.

Figure 14

The potential graph for U60×60(x,y)/J with the fan resistor network by Eq. (68).

Numerical algorithms for computing potential

Combining the DST-VI and Eqs. (30), (31), (32), (33), (34), this chapter provides two numerical algorithms to achieve fast calculation of large-scale potential for the resistor network. The numerical algorithm obtains similar results to the potential formulas (8) and (10).graphic file with name 41598_2023_39478_Figa_HTML.jpggraphic file with name 41598_2023_39478_Figb_HTML.jpggraphic file with name 41598_2023_39478_Figc_HTML.jpg

Remark 5

As is well-known, the Algorithm 1 is a tridiagonal matrix-vector multiplication, which the computational complexity is O(n). Moreover, one DST-VI needs 2nlog2n+O(n) real arithmetic operations68. So the Algorithm 2 composed of Algorithm 1 and two DST-VI, and it’s computational complexity is 4nlog2n+O(n). Analogous, the computational complexity of Algorithms 3 is also 4nlog2n+O(n). According to the above Algorithms 2 and Algorithms 3, two instances are used to display the iterative effect of large-scale data graphically in the following.

Let m=400 and n=10, the current J flows from the d1(x1,y1) point, x1=3,y1=150, and out from the d2(x2,y2) point, x2=7,y2=350. r=1, r0=100, and J=10. The fast algorithm of cobweb resistor network is shown in Fig. 15, and the fast algorithm of fan resistor network is shown in Fig. 16.

Figure 15.

Figure 15

A 3D image display for the fast Algorithm 2 of U400×10(x,y)/J on the cobweb resistor network.

Figure 16.

Figure 16

A 3D image display for the fast Algorithm 3 of U400×10(x,y)/J on the fan resistor network.

Efficiency of calculation method

On the m×n scale resistor network models, (x1,y1) refers to the input point of the current and (x2,y2) refers to the output point of the current. We give a comparison of calculation efficiency for the calculating potential in three different methods. “Time” is the total CPU time in seconds, t1, t2 and t3 denote CPU times of the potential computed by formulas (1), (3), formulas (8), (10) and Algorithm 2, 3, respectively.

The experiment is completed under the environmental conditions of CPU model AMD R9-5900HX, CPU frequency 3.30 GHz, and Matlab version is R2020b. ``m×n" is the number of nodes in the resistor network., ``-" denotes the operation time more than 1200s or beyond the memory limit of Matlab.

Remark 6

Tables 1, 3, 5 show the calculation time of cobweb resistor network with different square and rectangular sizes at different resistivity. The optimized potential formula (8) has faster operation speed.

Table 1.

The comparison of calculation efficiency for potential formulas (1) and (8).

m×n (x1,y1) (x2,y2) r/r0 t1 t2
100×100 (40 , 40) (80 , 80) 1 0.139 0.029
200×200 (40 , 40) (180 , 180) 1 0.923 0.121
300×300 (40 , 40) (180 , 180) 1 2.817 0.340
400×400 (40 , 40) (180 , 180) 1 7.685 1.649
800×100 (40 , 40) (80 , 80) 1 6.652 0.874
800×200 (40 , 40) (180 , 180) 1 15.269 3.510

Table 3.

The comparison of calculation efficiency for potential formulas (1) and (8).

m×n (x1,y1) (x2,y2) r/r0 t1 t2
400×400 (40 , 40) (180 , 180) 0.1 7.626 1.760
500×500 (40 , 40) (180 , 180) 0.1 14.666 3.001
600×600 (40 , 40) (180 , 180) 0.1 25.365 4.932
1100×1100 (40 , 40) (180 , 180) 0.1 159.767 34.444
1000×400 (40 , 40) (180 , 180) 0.1 47.323 9.187
1000×500 (40 , 40) (180 , 180) 0.1 59.539 11.613

Table 5.

The comparison of calculation efficiency for potential formulas (1) and (8).

m×n (x1,y1) (x2,y2) r/r0 t1 t2
1000×1000 (40 , 40) (580 , 580) 0.01 120.787 25.788
1500×1500 (40 , 40) (580 , 580) 0.01 405.983 92.694
1800×1800 (40 , 40) (580 , 580) 0.01 700.525 159.449
2000×2000 (40 , 40) (580 , 580) 0.01 958.713 217.022
1500×1000 (40 , 40) (580 , 580) 0.01 270.714 61.578
2000×1000 (40 , 40) (580 , 580) 0.01 480.070 110.790

Remark 7

Tables 2, 4, 6 show the calculation time of fan resistor network with different square and rectangular sizes at different resistivity. The optimized potential formula (10) has faster operation speed.

Table 2.

The comparison of calculation efficiency for potential formulas (3) and (10).

m×n (x1,y1) (x2,y2) r/r0 t1 t2
100×100 (40 , 40) (80 , 80) 1 0.271 0.045
200×200 (40 , 40) (180 , 180) 1 1.667 0.244
300×300 (40 , 40) (180 , 180) 1 0.631
400×400 (40 , 40) (180 , 180) 1 2.964
800×100 (40 , 40) (80 , 80) 1 13.210 1.546
800×200 (40 , 40) (180 , 180) 1 30.351 5.925

Table 4.

The comparison of calculation efficiency for potential formulas (3) and (10).

m×n (x1,y1) (x2,y2) r/r0 t1 t2
400×400 (40 , 40) (180 , 180) 0.1 14.962 3.016
500×500 (40 , 40) (180 , 180) 0.1 28.453 5.325
600×600 (40 , 40) (180 , 180) 0.1 9.052
1100×1100 (40 , 40) (180 , 180) 0.1 63.093
1000×400 (40 , 40) (180 , 180) 0.1 91.827 16.498
1000×500 (40 , 40) (180 , 180) 0.1 118.262 20.461

Table 6.

The comparison of calculation efficiency for potential formulas (3) and (10).

m×n (x1,y1) (x2,y2) r/r0 t1 t2
1000×1000 (40 , 40) (580 , 580) 0.01 234.791 46.840
1500×1500 (40 , 40) (580 , 580) 0.01 792.929 171.828
1800×1800 (40 , 40) (580 , 580) 0.01 1373.612 308.328
2000×2000 (40 , 40) (580 , 580) 0.01 410.130
1500×1000 (40 , 40) (580 , 580) 0.01 528.783 114.033
2000×1000 (40 , 40) (580 , 580) 0.01 943.748 208.219

Remark 8

Table 7 shows the efficiency of the potential formula (1), formula (8) and the Algorithm 2 for calculating the potential. Algorithm 2 not only realizes large-scale calculation, but also has shorter calculation time in calculating cobweb resistor network.

Table 7.

Comparison of the efficiency for potential formulas (1), (8) and Algorithm 2.

m×n (x1,y1) (x2,y2) r/r0 t1 t2 t3
100×10 (3 , 30) (5 , 50) 0.01 0.031 0.013 0.013
1000×10 (3 , 300) (5 , 500) 0.01 1.144 0.213 0.033
10000×10 (3 , 3000) (5 , 5000) 0.01 105.350 11.588 1.098
20000×10 (3 , 3000) (5 , 5000) 0.01 474.890 93.546 4.156
30000×10 (3 , 3000) (5 , 5000) 0.01 1043.302 204.098 8.369
40000×10 (3 , 3000) (5 , 5000) 0.01 1857.076 358.305 19.710

Remark 9

Table 8 shows the efficiency of the potential formula (3), formula (10) and the Algorithm 3 for calculating the potential. Algorithm 3 not only realizes large-scale calculation, but also has shorter calculation time in calculating fan resistor network.

Table 8.

Comparison of the efficiency for potential formulas (3), (10) and Algorithm 3.

m×n (x1,y1) (x2,y2) r/r0 t1 t2 t3
100×10 (3 , 30) (5 , 50) 0.01 0.035 0.017 0.013
1000×10 (3 , 300) (5 , 500) 0.01 1.188 0.388 0.050
10000×10 (3 , 3000) (5 , 5000) 0.01 106.246 21.425 1.014
20000×10 (3 , 3000) (5 , 5000) 0.01 468.767 175.736 3.465
30000×10 (3 , 3000) (5 , 5000) 0.01 1041.555 365.012 7.998
40000×10 (3 , 3000) (5 , 5000) 0.01 1858.145 637.289 19.353

Conclusion

In this paper, based on the RT-V method, the accurate potential formulas of the m×n cobweb resistor network and the m×n fan resistor network1 are improved. The potential formula is represented by the Chebyshev polynomial of the second class and the tridiagonal matrix is diagonalized by the DST-VI method, which realizes the high efficiency of the numerical simulation of the potential formula. The changes of variables in the potential formula are analyzed, and the corresponding three-dimensional view is drawn to show the influence of variable changes on the image. Then we design a fast algorithm for the resistor network potential to achieve fast calculation in the case of large-scale resistor networks. Finally, we show the calculation time of different calculation methods under different scale resistor networks, and the comparison shows the efficiency of the improved numerical simulation calculation.

Acknowledgements

The research was supported by the National Natural Science Foundation of China (Grant No.12001257), the Natural Science Foundation of Shandong Province (Grant No. ZR2020QA035).

Author contributions

Zheng, Yan-Peng and Jiang, Xiao-Yu conceived the project, performed and analyzed formulae calculations. Zhao, Wen-Jie validated the correctness of the formula calculation, and realized the numerical simulation and graph drawing. Jiang, Zhao-Lin present the fast algorithm of computing potential. All authors contributed equally to the manuscript.

Data availability

All data generated or analysed during this study are included in this article and its supplementary information files.

Competing interests

The authors declare no competing interests.

Footnotes

Publisher's note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Contributor Information

Yanpeng Zheng, Email: zhengyanpeng0702@sina.com.

Zhaolin Jiang, Email: jzh1208@sina.com.

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