Table 3.
Device architecture | JSC (mA/cm2) | VOC (V) | FF (%) | PCE (%) |
---|---|---|---|---|
ZnMgO/CsSnI3/GO-based PSC | 35.609 | 0.6236 | 78.21 | 17.37 |
TiO2/CsSnI3/GO-based PSC | 35.604 | 0.6204 | 78.18 | 17.04 |
ZnO/CsSnI3/GO-based PSC | 35.605 | 0.6201 | 78.11 | 17.24 |
ZnMgO/CsSnI3/Spiro-OMeTAD | 35.515 | 0.6135 | 78.02 | 16.99 |
TiO2/CsSnI3/Spiro-OMeTAD | 35.482 | 0.6024 | 77.89 | 16.64 |
ZnO/CsSnI3/Spiro-OMeTAD | 35.480 | 0.6018 | 77.78 | 16.60 |