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. Author manuscript; available in PMC: 2024 Nov 15.
Published in final edited form as: Nature. 2023 Apr 5;616(7958):712–718. doi: 10.1038/s41586-023-05847-6

Extended Data Fig. 10 |. Performance of the InGaN PN diode (GVGR-T11GD from GENUV, Inc.).

Extended Data Fig. 10 |

(a) A photograph of the InGaN diode. (b) Photo and dark current density curves of the InGaN diode. (c) EQE of the InGaN diode. (d) shunting resistance of the InGaN photodiode. (e) Dark count rate collected for the detector for 60 s measured at zero bia.; (f) Output of the InGaN diode measured at zero bias under incident light pulse with photon numbers. The light source for the photon counting performance measurement is a 404 nm picosecond pulse laser from Horiba.