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. 2024 Dec 16;25(1):616. doi: 10.1021/acs.nanolett.4c05914

Correction to “Interlayer Exciton–Phonon Coupling in MoSe2/WSe2 Heterostructures”

Oisín Garrity, Thomas Brumme, Annika Bergmann, Tobias Korn, Patryk Kusch, Stephanie Reich ✉
PMCID: PMC11719621  PMID: 39680714

Corrections to Table 2 in the original article are as follows.

Table 2. Deformation Potentials for the AM1g and AW1g Heterostructure Eigenvectors on the MoSe2 and WSe2 Bands at K (° = M, W)a.

  MAM1g/XA° (eV/Å) MA°1g/XAW (eV/Å) ratio
H-type Stacking
MAM1g/XA° 104 22 0.21
MAW1g/XA° 4 194 0.02
R-type Stacking
MAM1g/XA° 160 28 0.18
MAW°1g/XA° 17 199 0.09
a

The other heterostructure stackings are reported in Supporting Information Table I.

Supporting Information Available

The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.4c05914.

  • Experimental details and sample production as well as a description of the fitting procedure using eq 1 to fit the Raman spectra shown in Figure 3; additional figures showing the sample area, PL spectra from the monolayers, and a table of optical deformation potentials as well as how they were calculate (PDF)

Supplementary Material

nl4c05914_si_001.pdf (3.1MB, pdf)

Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Supplementary Materials

nl4c05914_si_001.pdf (3.1MB, pdf)

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