In the article by Huang et al., ‘TT-Nb2O5 with dual-band modulation and exceptional performance retention for fast-responsive electrochromics’ (National Science Review, Volume 12, Issue 6, 2025, nwaf154, https://doi.org/10.1093/nsr/nwaf154), the erroneous notation ‘Nb 3d’ was used at page 1, line 23; page 2, line 39; page 4, lines 1 and 5; page 5, line 3, as well as page 9, lines 17 and 22.
Based on the electron configuration of Nb (4d45s1), the valence d-orbital of Nb corresponds to the 4d orbital instead of the 3d orbital. All the aforementioned instances of ‘Nb 3d’ shall be revised to ‘Nb 4d’.
This constitutes a conceptual notation error only, with no impact on the experimental data, core conclusions, or the logical framework underpinning the material’s mechanism.
Contributor Information
Qingjiao Huang, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Peipei Shao, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Mingao Hou, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Yihan Lei, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Zhexuan Ou, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Jiacheng Hu, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Ying Zhu, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Bowen Li, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Menghan Yin, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Yiwen Zhang, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Renfu Zhang, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Jiawei Sun, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Changjian Li, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China.
Guangfu Luo, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China; Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen 518055, China.
Rui-Tao Wen, Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China; Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China.