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. 2026 Mar 12;14:1750413. doi: 10.3389/fchem.2026.1750413

Machine learning approach to topological graph descriptors of graphene nanoribbons

K Jyothish 1, S Roy 1,*, Chandra Sekar Ponnusamy 2, K B Gayathri 1, J Sahaya Vijay 1, Tony Augustine 1
PMCID: PMC13019882  PMID: 41909523

Abstract

Bottom-up syntheses of graphene nanoribbons have gathered considerable research interest because of their electronic properties and quantum behaviors which enhance their significance in nanotechnology. The advancement of material’s design methods and applications heavily depends on understanding how structural topology influences functional properties. This study analyzed valency based molecular descriptors of graphene nanoribbons with machine learning techniques. We have computed various valency based molecular descriptors of graphene nanoribbons and studied their predictive power using the logistic regression machine learning technique by describing its receiver operating characteristic curve to analyze the topological features of these graphene nanoribbons. These descriptors represent quantitative measurements of crucial structural features of graphene nanoribbons that directly affect material properties. This predictive framework enables researchers to design graphene nanoribbons with specific functionalities while advancing their knowledge about structure-property relationships in this material class. Molecular descriptors combined with machine learning methods demonstrate the potential to accelerate the discovery process and optimization of advanced nanomaterials.

Keywords: degree based topological descriptors, graphene nanoribbons, machine learning, regression analysis, composite semiconducting index

1. Introduction

Graphene, a flat monolayer of sp2 carbon atoms densely packed into a two dimensional honeycomb lattice of carbon atoms, is a fundamental part of carbon based materials. Graphene’s mechanical characteristics, chemical reactivity, and potential for use in many applications have positioned it as a promising chemical material in the last few decades. The transformation of graphene into a semiconductor has attracted quite a lot of attention in the previous few years, as the presence of a substantial bandgap in graphene might further open up an incredible potential of this material for a larger number of applications. Recent advancements in the liquid phase exfoliation process and graphene field effect transistors were developed to improve the capabilities of scale-up and operations. Also, studies moved to the applications of flexible electronics, photodetectors, and advanced computational modelling bringing arguably the greatest graphene prospects in semiconductor and optoelectronics devices (Chae and Lee, 2014; Lu et al., 2013; Nguyen and Nguyen, 2016; Shin et al., 2016; Sur, 2012; Yang et al., 2008; Kumar and Pattammattel, 2017).

Compared with the conventional semiconductors silicon, and gallium arsenide, graphene is superior in electrical conductivity, thermal conductivity, and mechanical strength (Son et al., 2006; Sorokin and Chernozatonskii, 2013). Graphene nanoribbon (GNR) are single-layer of graphene with width smaller than 50 nm, and have distinctive electronic and optical characteristics resulting from the nanostructure and edge carbon atoms. It has been identified that, while bulk graphene produces no bandgap, GNRs can be electronically modulated to be semi-conductive with bandgap depending on the width and edge geometry. The structure of edge of a GNR is either zigzag or armchair, which also composes the characteristics of the GNR: zigzag edge exhibits magnetic property, while the width of the bandgap will be affected by the armchair edge. In this paper, we are mainly studied on the topological properties of three graphene nanoribbons structures, namely, p-ANR, Zig-zag p-ANR and 4-CNR through machine learning analysis on degree-based topological indices of these structures. Graphical structure of these three GNRs are portrayed in the Figure 1. The p-ANR exhibits a structure characterized by an N = 9 armchair GNR, featuring partially extended edges that reach a maximum width of N = 15 armchair GNR (Figure 1a), with N representing the number of carbon atoms across the nanoribbon. This geometry shows a near infrared gap. And for the Zig-zag p-ANR a zig-zag geometrical orientation of the p-ANR molecule is constituted (Figure 1b). However, the 4-CNR is derived from N = 4 zigzag edge GNRs that integrate additional benzo-fused rings. It takes the shape of a cove-type edge configuration (Figure 1c), which results in a visible gap-filled semiconducting nanostructure. The unit cells of these three graphene nanoribbons are given in Figure 2, for p-ANR and zog-zag p-ANR the unit cell are same Figures 2a,b represents the primary cell of 4-CNR structure (Bai and Huang, 2010; Jordan et al., 2016; Liu et al., 2015; Tiwari et al., 2020; Zhao et al., 2017).

FIGURE 1.

Three structural diagrams labeled (a), (b), and (c) display atomic models of differently shaped graphene nanoribbon edges highlighted in pink, each numbered sequentially from one to n along the upper edge.

Molecular graph of Graphene nanoribbons growth nth stage (a) p-ANR; (b) Zig-zag p-ANR; (c) 4-CNR.

FIGURE 2.

Panel (a) shows a molecular structure with a regular arrangement of hexagonal rings connected in a lattice, while panel (b) displays a similar structure with more irregular polygonal shapes and connections. Both are illustrated using magenta spheres and lines to represent atoms and bonds.

Molecular graph of Graphene nanoribbons unit cells (a) both p-ANR and Zig-zag p-ANR; (b) 4-CNR.

A branch of mathematical chemistry known as chemical graph theory, which studies the advanced uses of graph theory in finding solutions of molecular phenomena. Here, a molecule is represented as a graph known as molecular graph. As a fundamental element in contemporary chemistry, chemical graph theory offers a systematic approach to depicting, evaluating, and forecasting the actions of chemical compounds. The primary aim of chemical graph theory is to utilize algebraic properties to reduce the topological structure of a molecule into a numerical value. One of these graph invariants are topological indices, they are numerical measures used in chemical graph theory to explain the structure of molecules based primarily on their connectivity. It was introduced by Harold Weiner in 1947 while he was working on the boiling point of alkanes. They offer valuable insights into the arrangement of atoms in molecules, which is essential for understanding their characteristics and behaviours. By examining how atoms are connected in a molecule, topological indices encode significant structural details that can be linked to various physical and chemical properties as well as biological properties. The stability, reactivity, and other physical characteristics of molecules can be better understood with the use of topological indices. Because of their many uses in advancing quantitative structure-activity relationship (QSAR) and quantitative structure-property relationship (QSPR) research, topological descriptors have been the subject of much research in recent years. They are widely employed in computational chemistry, various drug development, and chemical data analysis for diverse purposes. The elegant concepts of topological indices (TIs) or molecular descriptors can assist in the surmounting of the aforementioned limitations by further fine-tuning of the synthesis routes, improving the material stability, and controlling the bandgap. Using these mathematical descriptors, researchers are able build up better performance in production, understand strength and structural integrity and also be able to form specific functionalization strategies for graphene. According to models with developed topological indices, researchers can save time and money and quickly introduce graphene-based materials. This approach is important for the development of graphene for different applications since they provide information about structure-property relationship (Balaban, 1985; Gutman, 2006; Gutman, 2013; Trinajstic, 2018; Wiener, 1947).

Degree-based topological indices encode the coordination environment and connectivity distribution of atoms within a molecular graph, which are fundamental structural determinants of the electronic behaviour of graphene nanoribbons. In GNRs, edge configuration and vertex coordination strongly influence π -electron delocalization, bandgap opening, and transport characteristics. The indices considered in this study capture these features at different levels of structural resolution. Zagreb-type indices (Bi-Zagreb and Tri-Zagreb) quantify pairwise and higher-order interactions between vertex degrees, thereby reflecting the uniformity of carbon coordination along the nanoribbon backbone and edges. Higher Zagreb index values correspond to more regular coordination patterns, which are associated with enhanced π -electron delocalization and a higher likelihood of finite bandgap formation in bottom-up synthesized GNRs. The Randić and Sum Connectivity indices emphasize inverse degree relationships and connectivity efficiency, capturing how electron pathways are distributed across the nanoribbon network. These indices have been widely used as proxies for molecular branching and electronic communication efficiency, making them relevant for distinguishing metallic from semiconducting ribbon topologies. In contrast, harmonic and harmonic-geometric indices weight low-degree vertices more strongly, accentuating coordination heterogeneity and edge irregularity. In graphene nanoribbons, such heterogeneity can disrupt conjugation continuity and reduce electronic coherence, which is consistent with their observed negative contribution in the classification analysis. These numerical descriptors including Zagreb, Randić, and Atom bond connectivity indices are used to predict stability, conductivity, and other important parameters of semiconductor material which supports new material finding, understanding structure-property relationship and device performance enhancement. The first Zagreb index is one of the general topological indexes that are applicable in numerous branches of science and technology, and are most popular in the field of chemical, pharmacology, and material science. It is useful in predicting the boiling point of chemical compounds, especially benzenoid hydrocarbons, and is greatly involved in drug design in the processes of evaluating and predicting drug properties. It plays an important role in materials science where the researcher needs to explain the structure as well as behaviour of new as well as advanced materials. Further, it aids chemical characterization by associating chemical structures with chemical properties and behaviour (Augustine and Roy, 2022; Balaban and Ivanciuc, 2000; Fath-Tabar et al., 2010; Gayathri and Roy, 2025; Hayat et al., 2019; Hosoya and Hosoi, 1976; Jeyaraj and Roy, 2023; Jyothish et al., 2024; Jyothish and Roy, 2024).

Machine learning, as a data-driven extension of artificial intelligence, has increasingly been integrated with chemical graph theory to extract structure-property relationships from topological descriptors. In molecular and materials chemistry, established indices such as the Zagreb, Randić, Sombor, and related degree-based descriptors have been shown to encode connectivity patterns, coordination regularity, and structural compactness, which are directly relevant to electronic behaviour in conjugated systems. When combined with interpretable machine learning models, these descriptors enable systematic analysis of how graph topology influences material properties. In the context of graphene-based materials, machine learning offers a framework to examine how variations in nanoribbon structure and edge topology affect semiconducting behaviour, including trends associated with π -electron delocalization and connectivity efficiency. Among supervised learning approaches, classification methods are particularly suited for distinguishing electronic behaviour classes when direct prediction of continuous properties such as bandgap values is not the primary objective. Logistic regression, in particular, provides an interpretable model that links descriptor contributions directly to class discrimination. Model evaluation using Receiver Operating Characteristic (ROC) analysis further enables quantitative assessment of classification performance and robustness. In this work, machine learning is employed not as a generic predictive tool, but as an interpretable framework grounded in chemical graph theory. By defining a physically motivated Composite Semiconducting Index (CSI) derived from well-established degree-based descriptors, the study aims to connect topological features of bottom-up synthesized graphene nanoribbons with their semiconducting propensity, providing a structure-driven screening approach rather than speculative statistical correlation (Jordan and Mitchell, 2015; Karthikeyan and Priyakumar, 2022; Raihan, 2023; Sarker, 2021; Barman and Sarkar, 2025; Gayathri et al., 2025).

2. Materials and methods

In chemical graph theory, A molecular graph G=(V(G),E(G)) is a simple graph, where the edges indicate covalent bonds between the associated atoms and the nodes represent atoms. Specifically, hydrocarbons are made up of only hydrogen and carbon atoms, and the carbon skeleton of the molecule is represented by its molecular graph. Topological indices are numerical quantities that are derived from these molecular graphs, which delineate the structural features of the molecules, different degree-based topological indices and their mathematical equations are given in Tables 1, 2. The total count of edges that connect to the vertex p∈V(G) is termed the degree of vertex p , denoted as dp (Bondy and Murty, 1976; Trinajstic, 2018).

TABLE 1.

Degree-based topological descriptors.

First zagreb M1(G) = ∑pq∈E(G)[dp+dq]
Second zagreb M2(G)=∑pq∈E(G)[dp×dq]
Randić R(G)=∑pq∈E(G)[1dpdp]
Harmonic H(G)=∑pq∈E(G)[2dp+dq]
Sum connectivity SC(G)=∑pq∈E(G)1dp+dq
Geometric arithmetic GA(G)=∑pq∈E(G)2dpdqdp+dq
Inverse sum IS(G)=∑pq∈E(G)dpdqdp+dq
Symmetric division SDI(G)=∑pq∈E(G)dp2+dq2dpdq
Atom bond connectivity ABC(G)=∑pq∈E(G)dp+dq−2dpdq
Third zagreb M3(G)=∑pq∈E(G)|dp−dq|
Reduced second zagreb RM2(G)=∑pq∈E(G)(dp−1)(dq−1)
Hyper zagreb HM(G)=∑pq∈E(G)(dp+dq)2
Reciprocal randić RR(G)=∑pq∈E(G)dpdq
Reduced reciprocal randić RRR(G)=∑pq∈E(G)(dp−1)(dq−1)
Forgotten F(G)=∑pq∈E(G)dp2+dq2

TABLE 2.

Degree-based topological descriptors.

Bi-zagreb BM(G)=∑pqϵE(G)(dp+dq+dpdq)
Tri-zagreb TM(G)=∑pqϵE(G)(d2p+d2q+dpdq)
Geometric-harmonic GH(G)=∑pqϵE(G)dpdq(dpdq)2
Geometric-bi zagreb GBM(G)=∑pqϵE(G)dpdqdp+dq+dpdq
Geometric-tri zagreb GTM(G)=∑pqϵE(G)dpdqd2p+d2q+dpdq
Harmonic-geometric HG(G)=∑pqϵE(G)2dpdq(dp+dq)
Harmonic-bi zagreb HBM(G)=∑pqϵE(G)2(dpdq)(dp+dq+dpdq)
Harmonic-tri zagreb HTM(G)=∑pqϵE(G)2(dpdq)(d2p+d2q+dpdq)
Bi zagreb-geometric BMG(G)=∑pqϵE(G)dp+dq+dpdqdpdq
Bi zagreb-harmonic BMH(G)=∑pqϵE(G)(dpdq)(dp+dq+dpdq)2
Tri zagreb-geometric TMG(G)=∑pqϵE(G)d2p+d2q+dpdqdpdq
Tri zagreb-harmonic TMH(G)=∑pqϵE(G)(dpdq)(d2p+d2q+dpdq)2
Sombor SO(G)=∑pq∈E(G)dp2+dq2
Augmented zagreb AZ(G)=∑pq∈E(G)dpdqdp+dq−23
Modified second zagreb M2*(G)=∑pq∈E(G)1dpdq

For ensuring a chemically interpretable machine learning framework, a Composite Semiconducting Index (CSI) was defined and employed as the target variable. The CSI is constructed as the arithmetic mean of four established degree-based topological descriptors that have been independently reported to correlate with electronic delocalization and structural regularity in conjugated carbon systems:

CSI=14SO+GA+R+SC (1)

These indices collectively capture coordination uniformity, bond connectivity efficiency, and topological compactness, which are structural characteristics closely associated with π -electron delocalization and semiconducting behaviour in graphene-based nanostructures (Gutman, 2021; Randić, 1975; Vukičević and Furtula, 2009; Zhou and Trinajstić, 2009). Normalization was applied prior to aggregation to ensure equal contribution from each descriptor. Logistic regression was employed to model the relationship between degree-based topological descriptors and the CSI (Equation 1) Predicted probabilities for semiconducting behaviour were obtained from the trained logistic regression model using the CSI-based classification framework. For each graphene nanoribbon structure, the model outputs a posterior probability P (semiconducting), reflecting the likelihood that a given topology belongs to the semiconducting class. To visualize class separability and model confidence, probability distributions were analysed separately for semiconducting and metallic nanoribbons. Histograms were constructed using normalized frequencies to allow direct comparison between classes. In addition, kernel density estimation (KDE) was applied to generate smooth probability density curves, providing a continuous representation of classification confidence across the probability space and a decision threshold of 0.5 was used for binary classification. Model performance was evaluated using Receiver Operating Characteristic (ROC) analysis, with the area under the curve (AUC) used as the primary performance metric.

For the computation of topological indices, we have employed edge partition approach and graph theoretical techniques. Using Matlab software, we generated the topological indices general formula. The structural configurations of the graphene nanoribbon structures were plotted using Chemcraft, and the numerical findings were visually represented using Origin software.

3. Main results

This section summarizes the main findings of the study. We have calculated the generalized mathematical expressions for the topological indices based on the degrees of the vertices for the graphene nano-ribbons p-ANR, zigzag p-ANR, and 4-CNR. And the numerical analysis of these computed topological indices has done using the Matlab software.

3.1. Results on p-ANR

Let G1 be the corresponding molecular graph of the p-ANR structure, which have vertices of degrees 2 and 3. So there will be edges with end vertex degrees (2,2), (2,3) and (3,3), and the corresponding edge partition based on these degree is given in Table 3. The total number of vertices and edges of p-ANR are |V|=78n and |E|=109n−5 respectively. Also, the vertex count for degree 2 and 3 of the chemical graph of the p-ANR structure are |V2|=16n+10 and |V3|=62n−10 respectively.

TABLE 3.

Edge partition of p-ANR.

E(dr,ds) |E(dr,ds)|
E(2,2) 8n+8
E(2,3) 16n+4
E(3,3) 85n−17

Theorem 3.1

Let G1 represents the graph of p-ANR(n); n≥1 structure. Then,

  1. BM(G1)=1515n−147

  2. TM(G1)=2695n−287

  3. GH(G1)=797n+56(16n+4)2−121

  4. GBM(G1)=19n+6(16n+4)11−75

  5. GTM(G1)=97n9+6(16n+4)19−59

  6. HG(G1)=103n9+23(16n+4)15+19

  7. HBM(G1)=2941n990+53198

  8. HTM(G1)=13232n7695+15987695

  9. BMG(G1)=457n+116(16n+4)6−53

  10. BMH(G1)=4393n−527

  11. TMG(G1)=813n+196(16n+4)6−105

  12. TMH(G1)=7837n−995

  13. M1(G1)=622n−50

  14. M2(G1)=893n−97

  15. R(G1)=97n3+6(16n+4)6−53

  16. H(G1)=581n15−115

  17. SC(G1)=4n+52(16n+4)5+53(85n−17)6+4

  18. GA(G1)=93n+26(16n+4)5−9

  19. IS(G1)=1547n10−12710

  20. AZI(G1)=662n3−283

  21. ABC(G1)=170n3+22(8n+8)2+22(16n+4)2−343

  22. HM(G1)=3588n−384

  23. M3(G1)=16n+4

  24. RM2(G1)=380n−52

  25. RR(G1)=271n+6(16n+4)−35

  26. RRR(G1)=178n+2(16n+4)−26

  27. F(G1)=1802n−190

  28. M2*(G1)=127n9+79

  29. SO(G1)=22(8n+8)+13(16n+4)+32(85n−17)

  30. AZ(G1)=74253n64−624964

3.2. Results on zigzag p-ANR

For the structure zigzag p-ANR, let G2 be the corresponding molecular graph with vertices having degrees 2 and 3, and hence the partition of edge set contains edges with classes (2,2), (2,3) and (3,3), which is given in Table 4. The total number of vertices and edges of zigzag p-ANR are |V|=72n+6 and |E|=98n+6 respectively. And also the vertex count with degree 2 and 3 are |V2|=20n+6 and |V3|=52n respectively.

TABLE 4.

Edge partition of zigzag p-ANR.

E(dr,ds) |E(dr,ds)|
E(2,2) 12n+4
E(2,3) 16n+4
E(3,3) 70n−2

Theorem 3.2

Let G2 represents the graph of zigzag p-ANR(n); n≥1 structure. Then,

  1. BM(G2)=1322n+46

  2. TM(G2)=2338n+70

  3. GH(G2)=678n+523(16n+4)2−2

  4. GBM(G2)=17n+6(16n+4)11+35

  5. GTM(G2)=88n9+6(16n+4)19+49

  6. HG(G2)=97n9+23(16n+4)15+79

  7. HBM(G2)=5717n1980+139396

  8. HTM(G2)=26179n15390+348115390

  9. BMG(G2)=398n+116(16n+4)6+6

  10. BMH(G2)=3782n+84

  11. TMG(G2)=702n+196(16n+4)6+6

  12. TMH(G2)=6718n+124

  13. M1(G2)=548n+24

  14. M2(G2)=774n+22

  15. R(G2)=88n3+6(16n+4)6+43

  16. H(G2)=536n15+4415

  17. SC(G2)=6n+52(16n+4)5+53(70n−2)6+2

  18. GA(G2)=82n+26(16n+4)5+2

  19. IS(G2)=681n5+295

  20. AZI(G2)=596n3+383

  21. ABC(G2)=140n3+22(12n+4)2+22(16n+4)2−43

  22. HM(G2)=3112n+92

  23. M3(G2)=16n+4

  24. RM2(G2)=324n+4

  25. RR(G2)=234n+6(16n+4)+2

  26. RRR(G2)=152n+2(16n+4)

  27. F(G2)=1564n+48

  28. M2*(G2)=121n9+139

  29. SO(G2)=22(12n+4)+13(16n+4)+32(70n−2)

  30. AZ(G2)=32683n32−131932

3.3. Results on 4-CNR

In the case of 4-CNR, G3 be the molecular graph of the 4-CNR structure with vertices having degrees 1,2 and 3, and hence edge partition contains edges in classes (1,3), (2,2), (2,3) and (3,3), which is given in Table 5. The total number of vertices and edges of zigzag p-ANR are |V|=32n+24 and |E|=43n+28 respectively. And also the vertex count with degree 1,2 and 3 are |V1|=2n+2 , |V2|=6n+12 , and |V3|=24n+10 respectively.

TABLE 5.

Edge partition of 4-CNR.

E(dr,ds) |E(dr,ds)|
E(1,3) 2n+2
E(2,2) 5
E(2,3) 12n+14
E(3,3) 29n+7

Theorem 3.3

Let G3 represents the graph of 4-CNR; n≥1 structure. Then,

  1. BM(G3)=581n+313

  2. TM(G3)=1037n+541

  3. GH(G3)=261n+33(2n+2)2+523(12n+14)2+83

  4. GBM(G3)=29n5+3(2n+2)7+6(12n+14)11+5320

  5. GTM(G3)=29n9+3(2n+2)13+6(12n+14)19+2918

  6. HG(G3)=29n9+3(2n+2)6+23(12n+14)15+7336

  7. HBM(G3)=881n693+6473355440

  8. HTM(G3)=71347n100035+553837800280

  9. BMG(G3)=145n+73(2n+2)3+116(12n+14)6+55

  10. BMH(G3)=1656n+801

  11. TMG(G3)=261n+133(2n+2)3+196(12n+14)6+93

  12. TMH(G3)=2958n+1391

  13. M1(G3)=242n+140

  14. M2(G3)=339n+173

  15. R(G3)=29n3+3(2n+2)3+6(12n+14)6+296

  16. H(G3)=232n15+34330

  17. SC(G3)=n+5(12n+14)5+6(29n+7)6+72

  18. GA(G3)=29n+3(2n+2)2+26(12n+14)5+12

  19. IS(G3)=297n5+1695

  20. AZI(G3)=272n3+61

  21. ABC(G3)=58n3+522+2(12n+14)2+23(2n+2)3+143

  22. HM(G3)=1376n+714

  23. M3(G3)=16n+18

  24. RM2(G3)=140n+61

  25. RR(G3)=87n+3(2n+2)+6(12n+14)+31

  26. RRR(G3)=58n+2(12n+14)+19

  27. F(G3)=698n+368

  28. M2*(G3)=53n9+18136

  29. SO(G3)=102+10(2n+2)+32(29n+7)+13(12n+14)

  30. AZ(G3)=27717n64−1526364

3.4. Numerical computation

In this section we have computed the numerical values of the various degree based topological of the structures p-ANR, zigzag p-ANR and 4-CNR for the dimensions n=1 to 5. From analyzing these Tables 6–8, we can see that values of the topological indices are increasing with the dimension of the graphene nanoribbons. Also out of these computed thirty indices the TMH -index shows the highest numerical values for the considered three graphene nanoribbons of each dimension and HTM -index has the lowest numerical values also. The graphical representation of these topological indices values in Tables 6–8 are given in the Figures 3–5 respectively, we can see these observations in those descriptors 3D plots.

TABLE 6.

Quantitative values for degree-based topological indices of p-ANR.

Indices M1 M2 R H SC GA IS AZI ABC HM M3 RM2 RR RRR F
n = 1 572 796 38.8316 38.6667 44.7052 103.5959 142 211.3333 70.7892 3204 20 328 284.9898 180.2843 1612
n = 2 1194 1689 77.6969 77.4000 90.5617 212.2727 297 432.000 144.4264 6792 36 708 595.1816 380.9117 3414
n = 3 1816 2582 116.5622 116.1333 136.4182 320.9494 451 652.6667 218.0636 10380 52 1088 905.3735 581.5391 5216
n = 4 2438 3475 155.4276 154.8667 182.2747 429.6261 606 873.3333 291.7009 13968 68 1468 1215.5653 782.1665 7018
n = 5 3060 4368 194.2929 193.6000 228.1312 538.3029 761 1094.000 365.3381 17556 84 1848 1525.7571 982.7939 8820
Indices BM TM GH GBM GTM HG HBM HTM BMG BMH TMG TMH SO AZ M2*
n = 1 1368 2408 798.4745 22.0536 12.8006 14.8215 3.2384 1.9272 493.8146 3866 863.1344 6842 405.8654 1062.5625 14.8889
n = 2 2883 5103 1693.4541 44.6165 25.6411 28.8788 6.2091 3.6468 1022.6663 8259 1800.2418 14679 846.8061 2222.7656 29.0000
n = 3 4398 7798 2588.4337 67.1794 38.4816 42.9360 9.1798 5.3663 1551.5180 12652 2737.3493 22516 1287.7468 3382.9688 43.1111
n = 4 5913 10493 3483.4133 89.7423 51.3222 56.9932 12.1505 7.0859 2080.3697 17045 3674.4568 30353 1728.6875 4543.1719 57.2222
n = 5 7428 13188 4378.3928 112.3052 64.1627 71.0505 15.1212 8.8055 2609.2214 21438 4611.5643 38190 2169.6282 5703.3750 71.3333

TABLE 8.

Quantitative values for degree-based topological indices of 4-CNR.

Indices M1 M2 R H SC GA IS AZI ABC HM M3 RM2 RR RRR F
n = 1 382 512 27.4239 26.9000 30.8245 69.9388 93 151.6667 49.1863 2090 34 201 188.6149 113.7696 1066
n = 2 624 851 43.1442 42.3667 49.0303 112.4284 153 242.3333 78.6379 3466 50 341 308.4729 188.7401 1764
n = 3 866 1190 58.8646 57.8333 67.2360 154.9180 212 333.0000 108.0895 4842 66 481 428.3309 263.7107 2462
n = 4 1108 1529 74.5849 73.3000 85.4418 197.4076 271 423.6667 137.5411 6218 82 621 548.1889 338.6812 3160
n = 5 1350 1868 90.3052 88.7667 103.6475 239.8972 331 514.3333 166.9927 7594 98 761 668.0469 413.6518 3858
Indices BM TM GH GBM GTM HG HBM HTM BMG BMH TMG TMH SO AZ M2*
n = 1 894 1578 513.6091 15.2294 8.7182 10.6505 2.4389 1.4053 332.9248 2457 585.6969 4349 273.2706 671.5625 10.9167
n = 2 1475 2615 853.2900 24.1965 13.7539 16.4096 3.7102 2.1185 539.8965 4113 954.7886 7307 445.8984 1104.6406 16.8056
n = 3 2056 3652 1192.9708 33.1635 18.7897 22.1688 4.9815 2.8317 746.8682 5769 1323.8803 10265 618.5261 1537.7188 22.6944
n = 4 2637 4689 1532.6517 42.1306 23.8254 27.9280 6.2528 3.5449 953.8399 7425 1692.9720 13223 791.1539 1970.7969 28.5833
n = 5 3218 5726 1872.3325 51.0976 28.8612 33.6871 7.5240 4.2582 1160.8115 9081 2062.0637 16181 963.7816 2403.8750 34.4722

FIGURE 3.

Side-by-side 3D bar charts use vibrant colors to represent different categories, each identified by a color-coded legend. Both charts display five groups along the x-axis and multiple color-coded series along the y-axis, with the left chart’s z-axis peaking at one thousand two hundred and the right at forty thousand. Vertical heights illustrate quantity differences, with all categories labeled and color-matched between legend and bars for clarity. Data visualization focuses on comparative quantities across each category.

Visual representation of topological descriptors values of p-ANR.

FIGURE 5.

Two three-dimensional bar charts with colored bars display categorical data distributions. Each chart includes a legend matching bar colors to labeled categories. The left chart’s bars range from zero to six hundred, while the right chart’s bars range from zero to eighteen thousand. Both charts have axes labeled with different categorical abbreviations and colored legends positioned to the right for category identification.

Visual representation of topological descriptors values of 4-CNR.

TABLE 7.

Quantitative values for degree-based topological indices of zigzag p-ANR.

Indices M1 M2 R H SC GA IS AZI ABC HM M3 RM2 RR RRR F
n = 1 572 796 38.8316 38.6667 44.7052 103.5959 142 211.3333 70.7892 3204 20 328 284.9898 180.2843 1612
n = 2 1120 1570 74.6969 74.4000 86.4380 201.2727 278 410.0000 137.2548 6316 36 652 558.1816 354.9117 3176
n = 3 1668 2344 110.5622 110.1333 128.1708 298.9494 414 608.6667 203.7205 9428 52 976 831.3735 529.5391 4740
n = 4 2216 3118 146.4276 145.8667 169.9035 396.6261 551 807.3333 270.1861 12540 68 1300 1104.5653 704.1665 6304
n = 5 2764 3892 182.2929 181.6000 211.6363 494.3029 687 1006.0000 336.6518 15652 84 1624 1377.7571 878.7939 7868
Indices BM TM GH GBM GTM HG HBM HTM BMG BMH TMG TMH SO AZ M2*
n = 1 1368 2408 798.4745 22.0536 12.8006 14.8215 3.2384 1.9272 493.8146 3866 863.1344 6842 405.8654 1062.5625 14.8889
n = 2 2690 4746 1574.4541 42.6165 24.6411 28.2121 6.1258 3.6283 963.6663 7648 1689.2418 13560 794.4802 2083.9063 28.3333
n = 3 4012 7084 2350.4337 63.1794 36.4816 41.6027 9.0131 5.3293 1433.5180 11430 2515.3493 20278 1183.0950 3105.2500 41.7778
n = 4 5334 9422 3126.4133 83.7423 48.3222 54.9932 11.9005 7.0303 1903.3697 15212 3341.4568 26996 1571.7098 4126.5938 55.2222
n = 5 6656 11760 3902.3928 104.3052 60.1627 68.3838 14.7879 8.7314 2373.2214 18994 4167.5643 33714 1960.3246 5147.9375 68.6667

FIGURE 4.

Two three-dimensional bar charts with elliptical bars display multicolored data categorized by abbreviations along the x-axis and numbers along the y-axis, each chart featuring a color-coded legend mapping abbreviations to specific colors on the right side.

Visual representation of topological descriptors values of zig-zag p-ANR.

4. Discussions

4.1. Logistic regression analysis using machine learning

The logistic regression analysis reveals the relative influence of various graph-based indices such as the Bi-Zagreb, Tri-Zagreb, and harmonic-geometric indices on the predicted outcome. These indices capture mathematical properties that describe vertex degrees, geometric relationships, and harmonic interactions within the graph structure of the data, offering insights into the underlying structural features that may affect the target outcome (See Figure 6).

FIGURE 6.

Bar graph (panel A) displays coefficient values for different topological descriptors, highlighting Randic index in green with the highest positive value and Sombor index in blue with the lowest negative value; sum-connectivity and geometric-arithmetic indices are marked in red and orange. Scatter plot (panel B) shows the relationship between composite semiconducting index (CSI) and descriptor values for four indices, with distinct color-coded data points for Sombor, geometric-arithmetic, Randic, and sum-connectivity indices.

(A) Standardized logistic regression coefficients of topological descriptors used to classify semiconducting versus metallic graphene nanoribbons. Descriptors forming the Composite Semiconducting Index (CSI)-Sombor (blue), Geometric-Arithmetic (orange), Randić (green), and Sum Connectivity (red) are highlighted. (B) Correlation between individual CSI components and the Composite Semiconducting Index, illustrating their structured and monotonic contributions across nanoribbon sizes.

The logistic regression analysis (Figure 6A) identifies a physically interpretable subset of degree-based descriptors as dominant contributors to semiconducting classification. Among these, the Randić index exhibits the strongest positive coefficient, indicating that balanced vertex connectivity and coordination homogeneity strongly favour semiconducting behaviour in graphene nanoribbons. This observation is consistent with the role of Randić type descriptors in capturing efficient π -electron delocalization pathways along conjugated carbon frameworks. The Geometric-Arithmetic index also contributes positively, suggesting that structural regularity and bonding efficiency enhance the likelihood of finite bandgap formation. In contrast, the Sombor index shows a pronounced negative coefficient, implying that increased local degree variance and compact coordination environments correlate with metallic or near-zero bandgap characteristics. A similar, though weaker, negative contribution is observed for the Sum Connectivity index, indicating that excessive cumulative coordination may suppress semiconducting behaviour. These trends demonstrate that not all connectivity-enhancing descriptors act uniformly and that the nature of degree distribution is critical. Importantly, Figure 6B illustrates that the four highlighted descriptors contribute monotonically and systematically to the Composite Semiconducting Index (CSI), confirming that CSI reflects coordinated topological evolution rather than arbitrary statistical weighting. Collectively, these results show that simpler, degree-based indices capturing coordination balance and delocalization efficiency are more predictive of semiconducting behaviour than higher-order composite descriptors. This supports the use of interpretable, structure-derived indices for topology-driven screening of graphene nanoribbons with semiconducting potential.

4.2. Probability distribution analysis of semiconducting behaviour of GNRs

Probability distribution analysis provides an interpretable means to evaluate model confidence and class separability beyond conventional accuracy metrics, which is particularly important when relating graph-theoretic descriptors to physically meaningful electronic behaviour. In this study, probability distributions are used to assess how effectively the CSI-based logistic regression model distinguishes semiconducting from metallic graphene nanoribbon topologies. Figure 7 shows a clear separation between the predicted probability distributions of semiconducting and metallic nanoribbons. Semiconducting structures are predominantly associated with high predicted probabilities, while metallic systems are confined to the low-probability region, with minimal overlap. This separation indicates that the classification is driven by structurally meaningful information encoded in the CSI rather than arbitrary statistical effects.

FIGURE 7.

Histogram and kernel density estimation plot comparing predicted probabilities of semiconducting and metallic behaviors in graphene nanoribbons, with distinct clustering near zero for metallic and near one for semiconducting cases, and a vertical dashed line at 0.5 indicating classification threshold.

Distribution of predicted probabilities for semiconducting behaviour of graphene nanoribbons obtained from the CSI-based logistic regression model. Histograms and kernel density estimates compare semiconducting and metallic classes, with the vertical dashed line indicating the classification threshold.

The smooth density profiles suggest a gradual transition between metallic and semiconducting behaviour, consistent with the continuous modulation of electronic properties in graphene nanoribbons as a function of edge topology and coordination patterns. The decision threshold lies within a low-density region, reducing ambiguity and supporting robust classification. Therefore, the systematic shift of the semiconducting distribution toward higher probabilities confirms the effectiveness of CSI as a cumulative descriptor integrating coordination balance and connectivity.

These ROC curve (Figure 8) have practical implications for fields that use graph-based indices in predictive modeling, such as molecular graph analysis, network science, and social network analysis. For example, in chemical graph theory, the positive association of simpler Zagreb indices may suggest that molecular structures with higher vertex interactions are advantageous for semiconducting properties. Conversely, the negative influence of harmonic-geometric indices could indicate that specific structural characteristics detract from achieving the target outcome, which could guide future experimental designs to control for or avoid these features when possible. When considered alongside ROC performance, these results demonstrate that degree-based graph descriptors can reliably support topology-guided screening of GNRs.

FIGURE 8.

Line graph showing a receiver operating characteristic (ROC) curve with true positive rate on the y-axis and false positive rate on the x-axis. The ROC curve is plotted in blue, rising steeply and then leveling off near the top, indicating strong model performance. The area under the curve (AUC) is labeled as zero point nine zero. A diagonal dashed line indicates the threshold for random guessing.

ROC curve.

4.3. Applications on topological study using machine learning methods

While logistic regression enables transparent interpretation of descriptor contributions, certain limitations remain. Multicollinearity among degree-based indices may influence coefficient magnitudes, as multiple descriptors encode overlapping structural information. Nevertheless, the probabilistic separation observed in the ROC and probability distribution analyses confirms the robustness of the composite CSI framework. From an application perspective, the present approach offers a topology-guided screening strategy rather than direct prediction of device-level properties. In the context of graphene nanoribbons, degree-based indices can serve as computationally inexpensive proxies for identifying structural motifs associated with semiconducting behaviour prior to detailed electronic structure calculations. Such pre-screening can support the rational selection of nanoribbon architectures for further theoretical or experimental evaluation, contributing to efficient design workflows in nanoscale semiconductor research. The logistic regression provides a valuable basis for interpreting feature importance; there are limitations that warrant further exploration. Multicollinearity among these indices may affect interpretability, as overlapping structural characteristics could skew the coefficient values. Future research could explore the robustness of these indices across different datasets, or expand the model by including interaction terms to deepen understanding of their roles.

Additionally, investigating whether these findings generalize to other domains or graph structures, as well as integrating these indices with advanced machine learning techniques such as ensemble methods or neural networks, may enhance predictive power and yield more comprehensive insights into the structural characteristics of the graph. This analysis of graph-based indices and their predictive significance can extend beyond molecular graph analysis and network science to applications in semiconductor device research. In semiconductor devices, such as transistors and integrated circuits, the structural and interaction properties of components at the nanoscale significantly impact performance. Graph based indices could be applied to model these interactions, capturing properties like electron mobility, conductivity pathways, and component interconnections in a semiconductor lattice.

5. Conclusion

In this work, to establish a physically motivated prediction task, a Composite Semiconducting Index (CSI) was introduced and employed within a logistic regression model. The resulting coefficient, probability distribution, and ROC analyses demonstrate that simpler degree-based descriptors, particularly Zagreb-type indices, contribute positively to the classification of semiconducting nanoribbon topologies. In contrast, harmonic-geometric descriptors exhibit weaker or negative influence, suggesting that excessive heterogeneity in local connectivity may reduce semiconducting likelihood. Overall, the results confirm that degree-based graph descriptors, when combined into a composite and interpretable target, can capture meaningful structural distinctions relevant to graphene nanoribbon electronic behaviour. This framework provides a computationally efficient, topology-guided screening strategy that can support structure-property analysis and guide further theoretical or experimental investigations in graphene-based nanomaterials.

Funding Statement

The author(s) declared that financial support was received for this work and/or its publication. Jyothish K acknowledges the Department of Science and Technology (DST), India, for awarding the DST/Inspire fellowship/2023/IF230142 Inspire Fellowship. Financial support from the Vellore Institute of Technology is gratefully acknowledged.

Footnotes

Edited by: Utpal Sarkar, Assam University, India

Reviewed by: Selva Chandrasekaran Selvaraj, University of Illinois Chicago, United States

Sadhana Barman, Assam University, India

Data availability statement

The original contributions presented in the study are included in the article/supplementary material, further inquiries can be directed to the corresponding author.

Author contributions

KJ: Conceptualization, Formal Analysis, Investigation, Methodology, Software, Validation, Visualization, Writing – original draft, Writing – review and editing. SR Supervision, Validation, Writing – review and editing. CS: Methodology, Software, Visualization, Writing – review and editing. KG: Conceptualization, Methodology, Writing – review and editing. JV: Methodology, Validation, Writing – review and editing. TA: Validation, Visualization, Writing – review and editing.

Conflict of interest

The author(s) declared that this work was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

Generative AI statement

The author(s) declared that generative AI was not used in the creation of this manuscript.

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Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Data Availability Statement

The original contributions presented in the study are included in the article/supplementary material, further inquiries can be directed to the corresponding author.


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