1.

(a) Optical image of a Hall bar device (w = 10 μm and L = 100 μm) showing the coordinate system, rotation angle, and wiring. R _xy is obtained from the 2ω voltage response as V _xy /I. (b and c) R _xy (ϕ) for YIG (10 nm)/Pt and YIG (100 nm)/Pt at 10 mT (black dots) and 400 mT (blue squares), respectively, for I = 4 mA. The FL, 2ωSMR, and SSE (dotted, dashed, and solid lines, respectively) represent the R _xy,FL , R _xy,SMR , and R _xy,SSE contributions to R _xy at 10 mT evaluated from fitting the data to eq . The SSE contribution overlaps with R _xy (400 mT), showing that at large fields the signal is dominated by the SSE.