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. 2026 Aug 3;11(32):47692–47700. doi: 10.1021/acsomega.6c02784

Self-Powered Broadband Ta2NiSe5/PdSe2 Heterojunction Photodetector with Mid-Infrared Response

Yanqiu Xue †, Jia Xu ‡, Jian Yuan †,*, Yi Liu †, Haibin Li †, Haoran Mu §,*
PMCID: PMC13491949  PMID: 42626257

Abstract

Broadband photodetectors capable of extending into the mid-infrared region are of great interest for applications requiring access to molecular vibrational and thermal radiation information, yet their realization under low-power or self-powered conditions remains challenging. Here, we report a self-powered van der Waals heterojunction photodetector composed of narrow-band gap Ta2NiSe5 and semimetal PdSe2. First-principles calculations reveal band alignment giving rise to a strong built-in electric field that enables efficient carrier separation under zero bias. Benefiting from this interfacial band engineering, the device delivers a responsivity of 212 mA/W and a detectivity of 9 × 109 Jones at 638 nm, while maintaining a measurable of 0.05 mA/W at 4000 nm. At a low modulation frequency of 7 Hz, a noise-equivalent power as low as 1.06 × 10–10 W Hz–1/2 is obtained, allowing sensitive low-frequency weak-light detection. Stable and relatively fast photoresponse is achieved, with rise and decay times of 407 and 457 μs, respectively. Moreover, the heterojunction exhibits a broadband spectral response into the mid-infrared regime around 4 μm. These results highlight Ta2NiSe5/PdSe2 heterojunctions as a promising platform for low-power, broadband optoelectronic applications.

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1. Introduction

Broadband photodetectors are devices capable of sensing light over a wide range of wavelengths, typically spanning the visible and infrared spectral regions. − Within this spectrum, the mid-infrared region, generally defined as wavelengths longer than 2.5 μm, differs from the visible and near-infrared ranges in both physical origin and information content. Visible and near-infrared light is mainly associated with electronic transitions, whereas mid-infrared radiation is dominated by molecular vibrational modes and thermal emission processes. Mid-infrared photodetection provides access to molecular-specific vibrational signatures and thermal radiation characteristics and is widely used in applications such as molecular identification, environmental monitoring, and thermal imaging. − However, broadband photodetection extending into the mid-infrared region remains challenging. In commercial systems, detection across the visible-to-mid-IR range often relies on multiple detectors operating in separate spectral windows, which limits device integration and increases system complexity. − In addition, mid-infrared photodetection typically depends on cooling and often requires external biasing, resulting in high power consumption and reduced portability. , Low-power and highly integrated broadband photodetectors capable of operating continuously from the visible to the mid-infrared region remain difficult to realize with conventional material platforms and device architectures.

Two-dimensional (2D) layered materials provide a versatile platform for such devices owing to their atomic-scale thickness, tunable electronic structures, and clean van der Waals interfaces. − Among them, narrow-band gap 2D semiconductors are especially attractive for broadband and long-wavelength photodetection. ,, Ta2NiSe5, a quasi-one-dimensional layered semiconductor with an intrinsic band gap of approximately 0.37 eV, , exhibits strong optical absorption from the visible to the infrared region, making it a promising material for wide-spectrum photodetectors. Although Ta2NiSe5 exhibits excellent performance at a bias of 0.1 V, devices based solely on it typically suffer from large dark current and inefficient carrier separation under zero-bias conditions, which severely limit their detectivity and self-powered performance, − with relatively few studies focusing on its self-powered operation in the near-infrared and mid-infrared regions. , Overcoming these intrinsic limitations while preserving near- and mid-infrared optical absorption therefore remains a key challenge.

Here, we construct a self-powered van der Waals heterojunction photodetector by integrating Ta2NiSe5 and PdSe2. The device achieves an effective self-powered broadband photoresponse from the visible to the mid-infrared region. First-principles calculations indicate interfacial band alignment and charge redistribution in the Ta2NiSe5/PdSe2 heterostructure, supporting built-in-field-assisted carrier separation under zero external bias. − The device exhibits a maximum responsivity of 212 mA W–1 at 638 nm and a responsivity of 0.06 mA W–1 at 4 μm, with an NEP of 1.06 × 10–10 W Hz–1/2, enabling sensitive low-frequency weak-light detection. Stable and relatively fast photoresponse is achieved, with rise and decay times of 407 and 457 μs, respectively. These results establish the Ta2NiSe5/PdSe2 heterojunction as a promising platform for low-power, broadband, and self-powered optoelectronic devices.

2. Result and Discussion

Figure a illustrates a schematic representation of the Ta2NiSe5/PdSe2 heterojunction photodetector. The device consists of vertically stacked Ta2NiSe5 and PdSe2 nanosheets on a Si/SiO2 substrate, with 50 nm-thick Au electrodes serving as the source and drain contacts. An atomic-scale schematic of the junction region shows that PdSe2 consists of puckered Se–Pd–Se trilayers, whereas Ta2NiSe5 is composed of quasi-one-dimensional Ni–Se chains sandwiched by Ta–Se chains and stacked through van der Waals interactions.

1.

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(a) Schematic diagram of the Ta2NiSe5/PdSe2 heterojunction photodetector. (b) Raman spectra in Ta2NiSe5 (red line), PdSe2 (blue line), and the junction (black line) region. (c) SEM image of Ta2NiSe5/PdSe2 heterojunction photodetector. (d) Associated EDS elemental maps of Pt, In, and Se, Scale bar: 2 μm. (e) AFM images of the heterostructures comprising Ta2NiSe5/PdSe2. Scale bar: 2 μm. (f) Thicknesses of PdSe2 and Ta2NiSe5 nanosheets are 92 and 15.2 nm. Scale bar: 1 μm.

The Raman spectra further confirm the crystalline quality of the individual components and the heterojunction. As shown in Figure b, under excitation with a 532 nm laser, the Ag vibrational modes of Ta2NiSe5 are observed at 97, 124, 189, 213, and 287 cm–1. The characteristic Raman peaks of PdSe2 appear at 147, 206, 224, and 258 cm–1, corresponding to the A g , A g , A 1g , and A g phonon vibration modes, respectively, in good agreement with previous reports. , In the heterojunction region, the characteristic peaks of both Ta2NiSe5 and PdSe2 are clearly distinguished without noticeable peak shifts or broadening, indicating the formation of a high-quality heterojunction with minimal interfacial chemical interaction.

The morphology and interfacial contact of the heterojunction were further examined by scanning electron microscopy (SEM). As shown in Figure c, the heterojunction exhibits a flat and continuous surface, indicating intimate interfacial contact between the Ta2NiSe5 and PdSe2 layers. Energy-dispersive X-ray spectroscopy (EDS) elemental mapping (Figure d) confirms that the bottom Ta2NiSe5 region is enriched with Ta and Ni elements, whereas the top PdSe2 region exhibits a high Pd concentration, while Se is uniformly distributed across the entire heterojunction area. To determine the thickness and surface morphology of the Ta2NiSe5/PdSe2 heterojunction, atomic force microscopy (AFM) measurements were performed as shown in Figure e,f. The thicknesses of Ta2NiSe5 and PdSe2 are approximately 92 and 15.2 nm, respectively.

In heterojunction devices, band alignment plays a critical role in governing interfacial carrier transport. First-principles calculations based on density functional theory (DFT) were employed to elucidate the band structure, charge density difference, and interfacial charge redistribution of the Ta2NiSe5/PdSe2 heterojunction. The calculated band structures. (Figure a,b) indicate that Ta2NiSe5 is a direct band gap semiconductor with a band gap of approximately 0.30 eV, whereas multilayer PdSe2 exhibits semimetallic characteristics with a near-zero band gap. Here, our calculated value for Ta2NiSe5 is close to previously reported values of about 0.33–0.37 eV, while the semimetallic or near-zero-gap behavior of multilayer PdSe2 is also consistent with the literature. Figure c presents the charge density difference distribution of the heterojunction, where the yellow regions represent charge accumulation and the blue regions denote charge depletion, with charges predominantly accumulating near the interface on the Ta2NiSe5 side. This interfacial charge transfer suggests the formation of an internal electric field across the junction, which is expected to facilitate carrier separation in the absence of an external bias.

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(a) Calculated band structure of Ta2NiSe5. (b) Calculated band structure of PdSe2. (c) Charge density difference in the Ta2NiSe5/PdSe2 heterostructure.

To further corroborate the band alignment inferred from the DFT calculations, Kelvin probe force microscopy (KPFM) measurements were subsequently carried out to experimentally probe the surface potential distribution prior to electrical contact. Figure a presents the optical image of the device used for this characterization, with the scanned region covering both constituent materials and the heterojunction interface. The surface potential distribution was obtained by measuring the contact potential difference (CPD) between the KPFM tip and the sample, as shown in Figure c. The CPD difference between the two materials was calculated using the following equation

CPDTa2NiSe5=Wtip−WTa2NiSe5=0.13eV
CPDPdSe2=Wtip−WPdSe2=0.2eV

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(a) Optical image of the photodetector. Scale bar: 30 μm. (b) Photocurrent diagram of the heterojunction photodetector under 638 nm (V ds = 0 V, S: source electrode, D: drain electrode) irradiation. (c) Surface potential of the Ta2NiSe5/PdSe2 heterojunction. (d) and (e) Energy band structures of Ta2NiSe5 and PdSe2 before and after contact, respectively. (f) Energy band structures of Ta2NiSe5 and PdSe2 heterojunction device under laser irradiation at 0 V.

where W tip , W Ta 2 NiSe 5 , and W PdSe 2 are the work functions of the KPFM tip, Ta2NiSe5, and PdSe2, respectively. A distinct potential difference of approximately 71.1 mV is observed. After calibration using highly oriented pyrolytic graphite (HOPG, EF = 4.6 eV) as a reference, the work functions of multilayer Ta2NiSe5 and PdSe2 are extracted as 4.73 and 4.80 eV, respectively, consistent with reported values.

On the basis of the clarified energy band structures before and after device contact, we further employed a scanning photocurrent imaging system to investigate the photocurrent-generation mechanism of the photodetector. As shown in Figure b, under 638 nm illumination at zero bias, a self-driven photocurrent is observed across the device, with the heterojunction region showing a significantly higher intensity due to efficient separation of photogenerated carriers by the interfacial built-in electric field.

To clarify the spatial origin of the self-powered photocurrent, spatially resolved photocurrent mapping was performed under 638 nm illumination on the individual Ta2NiSe5 region, the individual PdSe2 region, and the Ta2NiSe5/PdSe2 heterojunction region, as shown in Figure S1. The individual material regions exhibit much weaker photocurrent signals, whereas the heterojunction region shows the strongest and most localized response. The junction-localized photocurrent is already evident at zero bias and is further enhanced under an applied bias, indicating that the heterointerface plays the dominant role in photocurrent generation. Together with the KPFM results, these observations support that the self-powered response is mainly governed by the photovoltaic effect associated with the built-in electric field at the heterointerface. −

Based on DFT, KPFM, and photocurrent mapping results, Figure d–f present schematic energy band diagrams of the Ta2NiSe5/PdSe2 heterostructure under different conditions. Figure d,e schematically depicts the band alignment before and after contact at thermal equilibrium, respectively. Before contact, Ta2NiSe5 and PdSe2 possess different Fermi levels and work functions, resulting in an interfacial potential difference. After contact, electrons diffuse from Ta2NiSe5 to PdSe2 due to the higher Fermi level of Ta2NiSe5, until the Fermi levels are aligned. At equilibrium, the balance between diffusion and drift leads to interfacial band bending, as shown in Figure e. Specifically, the Ta2NiSe5 bands bend upward near the interface owing to hole accumulation, whereas the PdSe2 shows negligible band bending. As a result, a built-in electric field is established and directed toward the PdSe2 side.

Under illumination, as illustrated schematically in Figure f, photogenerated carriers are separated by the built-in electric field. Electrons are driven toward the Ta2NiSe5 side, while holes are transported toward the PdSe2 side, giving rise to a positive photocurrent under a zero bias. Notably, PdSe2 provides efficient carrier transport pathways, which facilitate carrier extraction in the heterostructure. This behavior indicates that, in the absence of external bias, this mechanism is controlled by the photovoltaic effect. − In summary, these results suggest that the Ta2NiSe5/PdSe2 heterojunction is a promising platform for self-powered broadband photodetection with a measurable mid-infrared response and relatively fast temporal response.

The photoresponse performance of the Ta2NiSe5/PdSe2 heterojunction photodetector was systematically studied using laser diodes with different wavelengths (405, 520, 638, 1550 nm, and 4 μm, as shown in Figures S2–S5). Figure a presents the I–V characteristics measured under dark and under 638 nm illumination at various incident optical powers. The current points at a bias voltage of 0 V were extracted from the I–V curves, as shown in the inset. Under illumination, a photocurrent is clearly observed at zero bias, confirming the self-powered operation of the device.

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Photoelectric characteristics of the Ta2NiSe5/PdSe2 heterojunction device under 638 nm illumination. (a) I–V curves measured under dark conditions and illumination. (b) Photocurrent switching behavior at 0 bias voltage. (c) R and D* of the device at 0 V bias. (d) Response time of the heterojunction photodetector at 0 V. (e) Spectrum of current noise power density at zero bias voltage. (f) Photocurrent versus optical power at 7 Hz modulation.

Time-resolved photocurrent measurements were performed at zero bias under 638 nm illumination, as shown in Figure b. The device exhibits stable and reproducible photocurrent switching between the on and off states under a periodic illumination. The photocurrent amplitude increases monotonically with an increase in incident optical power, indicating a reliable and power-dependent photoresponse.

To evaluate the performance of the photodetector, the responsivity (R), specific detectivity (D*), and response speed were calculated. R is defined as the photocurrent generated per unit of incident optical power on the effective area, and was calculated from the experimental data as

R=IPhPd
D*=RA2eId

where I ph is the photocurrent and P d is the effective optical power incident on the device, A is the effective area of the device (A = 20 μm2), e is the electronic charge, and R is the responsivity.

As the optical power increases, both R and D* decrease. This behavior can be attributed to the sublinear increase of photocurrent with increasing optical power. At higher photogenerated carrier densities, recombination through trap states and other defect-related recombination centers becomes more pronounced, reducing the number of photogenerated carriers collected by the electrodes. Consequently, the photocurrent does not increase proportionally with incident optical power, leading to a decrease in responsivity. , The calculated responsivity (R) and specific detectivity (D*) as a function of optical power under 638 nm illumination are shown in Figure c. R and D* reach their maximum values in our measurements, with R = 212 mA/W and D* = 9 × 109 Jones. The response speed of the photodetector is another key parameter affecting its application prospects. The rise time (or decay time) is defined as the time required for the photocurrent to increase from 10 to 90% (or decrease from 90 to 10%). Figure d shows a single cycle of the device’s current response at 0 V under 638 nm illumination, with a rise time of 407 μs and a decay time of 459 μs. These dynamic response results indicate that the photodetector is capable of fast photodetection. The photoresponse characteristics at representative wavelengths are further summarized in Figures S2–S4, including the I–V characteristics, time-resolved photocurrent responses, responsivity/detectivity, and response-time analyses under 405, 520, and 1550 nm illumination, respectively.

However, the practical ability of this heterojunction to detect weak optical signals is ultimately determined by its noise floor. To quantitatively assess the sensitivity limit of this device, its output noise current spectral density under zero bias and in the dark state was further measured (as shown in Figure e). The measured noise current spectral density exhibits a typical two-zone characteristic, which is very common in two-dimensional materials. In the low-frequency region (<10 Hz), the noise current decreases rapidly with increasing frequency, showing a significant 1/f noise behavior. This is commonly observed in two-dimensional material photodetectors and is attributed to random fluctuations of localized electronic states on nonuniform surfaces of the materials. When the frequency increases above 10 Hz, the noise spectrum enters a white noise plateau region dominated by shot noise and thermal noise, maintaining a relatively low level. Figure f shows the photocurrent response of the device under 7 Hz modulated illumination as a function of incident optical power. As the optical power increases, the photocurrent amplitude monotonically increases, indicating effective generation and collection of photogenerated carriers even under low-frequency excitation.

NEP=inoiseR

where i noise is the noise current spectral density and R is the responsivity. Based on the photocurrent measured at 7 Hz, the dark noise current spectral density of 6.34 × 10–12 A/Hz1/2, the NEP was calculated to be 1.06 × 10–10 W Hz–1/2. It demonstrates the device capability to detect weak optical signals under zero-bias conditions.

To verify the mid-infrared detection capability of the heterojunction photodetector, the photoresponse at 4 μm was investigated in Figure S5. The device exhibits distinguishable I–V characteristics under dark and 4 μm illumination conditions (Figure S5a). At 0 V bias, the time-resolved measurements under different incident powers were exhibited in Figure S5b, which show repeatable photocurrent switching. The extracted responsivity at 4 μm is approximately 0.05 mA W–1 under the present experimental conditions, further confirming that the device can detect 4 μm mid-infrared light at zero bias, although the response is much weaker than that in the visible region (Figure S5c). The broadband photoresponse of the device was further evaluated under laser illumination at different wavelengths, as shown in Figure a, which exhibits a zero-bias photoresponse from the visible region to 4 μm. As summarized in Figure b, the responsivity decreases with increasing wavelength, which may be related to weaker absorption and less efficient photogenerated carrier collection at longer wavelengths. Under repeated pulsed laser illumination at a fixed incident power over 1000 s, the photocurrent fluctuation range is about 9.8%, indicating good device stability (Figure c).

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(a) Broadband photoresponse of the heterojunction photodetector. (b) R of the device as a function of laser wavelength. (c) Long-term stability measurement.

Combined with the built-in-field-assisted carrier separation discussed in Figures b and S1, the 4 μm photoresponse is mainly enabled by the narrow band gap characteristics of the constituent materials. Ta2NiSe5 possesses a narrow band gap of approximately 0.3–0.37 eV, which is comparable to the photon energy of 4 μm light. , Meanwhile, multilayer PdSe2 has been reported to exhibit zero-gap semimetal, which may further facilitate long-wavelength absorption and carrier transport. To support this interpretation, the DFT-calculated optical absorption coefficient as a function of photon energy is presented in Figure S6. The finite absorption in the low-energy region is qualitatively consistent with the experimentally observed measurable photoresponse at 4 μm.

Based on the above photoresponse measurements and the comparison in Table , the Ta2NiSe5/PdSe2 photodetector combines zero-bias operation, high responsivity in the visible range, fast temporal response, and measurable mid-infrared photoresponse at 4 μm. Compared with representative Ta2NiSe5-based and related heterojunction photodetectors reported previously, the present device demonstrates the broadest spectral response range among the listed devices, spanning 405–4000 nm. Although its peak responsivity and detectivity are lower than those of some previously reported Ta2NiSe5-based heterojunction photodetectors, the present device combines self-powered operation, extended mid-infrared response to 4 μm, and relatively fast temporal response. ,,

1. Comparison Table of Performance Metrics of Photodetectors.

materials V ds (V) l (nm) R (A/W) D* (Jones) response time (rise/fall) refs
Ta2NiSe5/PdSe2 V ds = 0 V 405–4000 0.212 9 × 10 9 407/459 μs this work
α-In2Se3/Ta2NiSe5 V ds = 0 V 405–1550 12 3 × 1013 25/423 μs
MoS2/Ta2NiSe5 V ds = 0 V 532–1064 1.3 2.2 × 1012 56.3/451.2 ms
WSe2/Ta2NiSe5/WSe2 V ds = 0 V 400–1550 0.436 1 × 1012 420/640 μs
Ta2NiSe5/MoSe2 V ds = 0 V 300–1350 0.065 2.73 × 1012  
Ta2NiSe5/MoSSe V ds = 0 V 300–980 0.238 1.13 × 1012 349/333 μs
Nb-WS2/Ta2NiSe5 V ds = 0 V 405–3500 47.6 6 × 10 118/13 μs
MoTe2/Ta2NiSe5/MoTe2 V ds = 0 V 400–1550 0.539   3.5/4.2 μs
Bi2O2Se/MoTe2 V ds = 0 V 405–1310 0.019 5.72 × 109 208/173 μs
PdSe2/MoS2 V ds = 0 V 400–800 38 4 × 1010 125/7 μs
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3. Conclusion

In this work, we fabricated a Ta2NiSe5/PdSe2 heterojunction photodetector and elucidated the type-I band alignment and the underlying photocurrent generation mechanism. The device is capable of operating at zero external bias voltage, delivering a responsivity of 212 mA/W, a specific detectivity of 9 × 109 Jones, and rise/fall times of 407/459 μs. At a low frequency of 7 Hz, the noise-equivalent power (NEP) reaches 1.06 × 10–10 W Hz–1/2, enabling low-frequency weak-light detection. In addition, the Ta2NiSe5/PdSe2 photodetector exhibits broadband optical response over the wavelength range from 405 nm to 4 μm. These results suggest that Ta2NiSe5/PdSe2 heterojunctions are promising candidates for low-power broadband optoelectronic detection.

4. Experimental Section

4.1. Device Fabrication and Characterizations

First, Ta2NiSe5 and PdSe2 flakes were mechanically exfoliated from bulk single crystals using white tape through repeated cleavage and subsequently transferred to separate polydimethylsiloxane (PDMS) films. Then, the Ta2NiSe5 flakes were deterministically stamped onto a 300 nm SiO2/Si substrate, followed by heating at 72 °C for 3 min until complete transfer onto the substrate was achieved. Subsequently, under the same temperature condition, PdSe2 flakes were aligned and stacked onto the Ta2NiSe5 layer using an optical microscope, thereby forming a van der Waals heterojunction. All of the above transfer and stacking processes were carried out using a manual alignment stage under an optical microscope. Finally, gold (50 nm) metal electrodes were fabricated by standard photolithography and thermal evaporation. Electrical measurements were performed using a Keithley 6482 sourcemeter, and the optoelectronic properties of the devices were investigated under illumination with solid-state lasers of different wavelengths. During the measurements, all samples were maintained under dark and ambient atmospheric conditions.

4.2. Material Characterizations

An optical microscope (Nikon, Eclipse L200N) was used to examine the macroscopic geometry of the fabricated devices. The morphology and elemental composition of the prepared heterojunctions were analyzed by using scanning electron microscopy (SEM, Gemini 300) in combination with energy-dispersive X-ray spectroscopy (EDS). Raman spectroscopy (Lab RAM HR800) was used to investigate the phonon vibrational modes of Ta2NiSe5, PdSe2, and their heterojunction region under excitation with a 532 nm laser. Atomic force microscopy (AFM; Bruker Dimension Icon SPM) , was used to characterize the thickness and surface potential of the fabricated heterojunctions.

4.3. DFT Calculations

First-principles calculations were performed using density functional theory (DFT) as implemented in the Vienna ab initio Simulation Package (VASP), employing the projected augmented wave (PAW) method. The exchange–correlation interaction was described using the Perdew–Burke–Ernzerhof (PBE) functional within the generalized gradient approximation (GGA). A plane-wave energy cutoff of 520 eV was adopted, and Brillouin zone sampling was carried out using the Monkhorst–Pack k-point scheme.

Supplementary Material

ao6c02784_si_001.pdf (495.7KB, pdf)

Acknowledgments

This work was supported by the National Natural Science Foundation of China (No. 62574140, 12204336), the Guangdong Basic and Applied Basic Research Foundation (No. 2026A1515011650, 2024A1515010350), the State Key Laboratory of Applied Optics (SKLAO2022001A13), and the Natural Science Foundation of Anhui Higher Education Institutions of China (2023AH050335, 2023AH050349).

The authors declare that data supporting the findings of this study are available within the paper. Further data sets are available from the corresponding.

The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsomega.6c02784.

  • Spatially resolved photocurrent mapping of different regions of the Ta2NiSe5/PdSe2 heterojunction device under 638 nm illumination; photoresponse characterization under 405, 520, and 1550 nm illumination, including I–V curves, time-resolved photocurrent responses, responsivity, detectivity, and response time; additional photoresponse characterization at 4 μm, including I–V curves, time-resolved photocurrent response, responsivity, and estimated detectivity; DFT-calculated optical absorption coefficient as a function of photon energy (PDF)

Y.X. and H.M. conceived the idea and carried out material preparation and device fabrication, and wrote the original draft. J.X. conducted first-principles calculations. Y.L. and H.L. helped with device testing and data analysis. H.M. and J.Y. designed the experiments and revised the manuscript. H.M. conducts article supervision and manuscript revision.

The authors declare no competing financial interest.

References

  1. Wu T., Li Y., Zhou Q., Qiu Q., Gao Y., Zhou W., Yao N., Chu J., Huang Z.. Ultrasensitive Photoelectric Detection with Room Temperature Extremum. Light:Sci. Appl. 2025;14(1):96. doi: 10.1038/s41377-024-01701-0. [DOI] [PMC free article] [PubMed] [Google Scholar]
  2. Wang P., Li Z., Xia X., Zhang J., Lan Y., Zhu L., Ke Q., Mu H., Lin S.. Anisotropic Te/PdSe2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection. Small. 2024;20:2401216. doi: 10.1002/smll.202401216. [DOI] [PubMed] [Google Scholar]
  3. Che M., Li Y., Wang B., Yuan J., Qi L., Zou Y., Liu M., Zhao X., Shi Y., Tan F., Feng Y., Li D., Li S.. High-Efficiency Self-Powered Broadband Photodetector Based on PtSe2/MoSe2 Heterojunction. ACS Photonics. 2024;11(4):1693–1702. doi: 10.1021/acsphotonics.3c01922. [DOI] [Google Scholar]
  4. Huang L., Li P., Feng C., Zhang J., Zhao L., Sun J., Du C., Wang W., Li K.. High Performance Self-Driven Broadband Photodetector for Polarized Imaging Based on Novel ZrS3/ReSe2 Van der Waals Heterojunction. Mater. Today Nano. 2024;28:100527. doi: 10.1016/j.mtnano.2024.100527. [DOI] [Google Scholar]
  5. Tong J., Zhou W., Qu Y., Xu Z., Huang Z., Zhang D. H.. Surface Plasmon Induced Direct Detection of Long Wavelength Photons. Nat. Commun. 2017;8(1):1660. doi: 10.1038/s41467-017-01828-2. [DOI] [PMC free article] [PubMed] [Google Scholar]
  6. Zhang K., Li H., Mu H., Li Y., Wang P., Wang Y., Chen T., Yuan J., Chen W., Yu W., Zhang G., Bao Q., Lin S.. Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions. Adv. Mater. 2024;36(38):2405233. doi: 10.1002/adma.202405233. [DOI] [PubMed] [Google Scholar]
  7. Zhuang R., Cai S., Mei Z., Liang H., Zhao N., Mu H., Yu W., Jiang Y., Yuan J., Lau S., Deng S., Han M., Jin P., Wang C., Zhang G., Lin S.. Solution-Grown BiI/BiI3 van Der Waals Heterostructures for Sensitive X-Ray Detection. Nat. Commun. 2023;14(1):1621. doi: 10.1038/s41467-023-37297-z. [DOI] [PMC free article] [PubMed] [Google Scholar]
  8. Li Y., Cai S., Lai W. K., Wang C., Rogée L., Zhuang L., Zhai L., Lin S., Li M., Lau S. P.. Impurity-Induced Robust Trionic Effect in Layered Violet Phosphorus. Adv. Opt. Mater. 2022;10(1):2101538. doi: 10.1002/adom.202101538. [DOI] [Google Scholar]
  9. Kistner-Morris J., Shi A., Liu E., Arp T., Farahmand F., Taniguchi T., Watanabe K., Aji V., Lui C. H., Gabor N.. Electric-Field Tunable Type-I to Type-II Band Alignment Transition in MoSe2/WS2 Heterobilayers. Nat. Commun. 2024;15(1):4075. doi: 10.1038/s41467-024-48321-1. [DOI] [PMC free article] [PubMed] [Google Scholar]
  10. Gan W., Ming L., Zhang C., Peng G., Cao Z., Chen Z., Li Y., Wu C., Liu X., Song L.. Self-Powered Broadband UV-NIR Polarization-Sensitive Photodetector Based on Unipolar van Der Waals Heterostructure. ACS Appl. Mater. Interfaces. 2025;17(23):34086–34095. doi: 10.1021/acsami.5c01752. [DOI] [PubMed] [Google Scholar]
  11. Wang G., Sun Y., Yang Z., Lu W., Chen S., Zhang X., Yang C.. et al. Near-ideal Schottky junction photodetectors based on semimetal-semiconductor van der Waals heterostructures. Adv. Funct. Mater. 2024;34(25):2316267. doi: 10.1002/adfm.202316267. [DOI] [Google Scholar]
  12. Liu M., Wei J., Qi L., An J., Liu X., Li Y., Shi Z., Li D., Novoselov K. S., Qiu C.-W., Li S.. Photogating-Assisted Tunneling Boosts the Responsivity and Speed of Heterogeneous WSe2/Ta2NiSe5 Photodetectors. Nat. Commun. 2024;15(1):141. doi: 10.1038/s41467-023-44482-7. [DOI] [PMC free article] [PubMed] [Google Scholar]
  13. Zhu T., Liu K., Zhang Y., Meng S., He M., Zhang Y., Yan M., Dong X., Li X., Jiang M., Xu H.. Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate. ACS Nano. 2024;18(17):11462–11473. doi: 10.1021/acsnano.4c02923. [DOI] [PubMed] [Google Scholar]
  14. Zhang L., Han X., Wen P., Zhang S., Zheng Z., Li J., Gao W.. Weyl-Semimetal TaIrTe4/Si Nanostructures for Self-Powered Schottky Photodetectors. ACS Appl. Nano Mater. 2022;5(5):6523–6531. doi: 10.1021/acsanm.2c00613. [DOI] [Google Scholar]
  15. Li Z., Zheng T., Yang M., Sun Y., Luo D., Gao W., Zheng Z., Li J.. A Dual Mode MoTe2/WS2/WSe2 Double Van Der Waals Heterojunctions Phototransistor for Optical Imaging and Communication. Adv. Opt. Mater. 2024;12(8):2400023. doi: 10.1002/adom.202400023. [DOI] [Google Scholar]
  16. Zhang C., Peng S., Han J., Li C., Zhou H., Yu H., Gou J., Chen C., Jiang Y., Wang J.. Fully-Depleted PdTe2 /WSe2 van Der Waals Field Effect Transistor with High Light On/Off Ratio and Broadband Detection. Adv. Funct. Mater. 2023;33(40):2302466. doi: 10.1002/adfm.202302466. [DOI] [Google Scholar]
  17. Zhang J., Ye B., Qian L., Zhang X., Yang X., Liu Y., Parkhomenko I. N., Komarov F. F., Liu Y., Yang G.. Self-Powered Photodetectors Based on Ta2 NiSe5 /p-GaN Heterostructures for UV Imaging Applications. ACS Appl. Electron. Mater. 2025;7(3):1267–1273. doi: 10.1021/acsaelm.4c02210. [DOI] [Google Scholar]
  18. Li H., Zhang K., Li X., Liu B., Li L., Mei Z., Chen T., Liu Q., Yu W., Yuan J., Mu H., Lin S.. Two-Dimensional (2D) α-In2Se3/Ta2NiSe5 Heterojunction Photodetector with High Sensitivity and Fast Response in a Wide Spectral Range. Mater. Des. 2023;227:111799. doi: 10.1016/j.matdes.2023.111799. [DOI] [Google Scholar]
  19. Guo T., Song X., Wei P., Li J., Gao Y., Cheng Z., Zhou W., Gu Y., Chen X., Zeng H., Zhang S.. High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current. ACS Appl. Mater. Interfaces. 2022;14(50):56384–56394. doi: 10.1021/acsami.2c17495. [DOI] [PubMed] [Google Scholar]
  20. Yang F., Yu Y., Zhang X., Qu Z., Chen Z., Wang S., Wang Y., Zheng T., Zhao W., Lu J., Liu H.. Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High-Performance, Polarization-Sensitive, and Broadband Infrared Photodetector. Ad. Electron. Mater. 2025;11(13):2500115. doi: 10.1002/aelm.202500115. [DOI] [Google Scholar]
  21. Wang P., Mu H., Yun T., Ji D., Wei B., Mei Z., Xian L., Ke Q., Zhang G., Lin S.. High Rectification and Gate-Tunable Photoresponse in 1D-2D Lateral van Der Waals Heterojunctions. Innovation Mater. 2025;3(1):100113. doi: 10.59717/j.xinn-mater.2024.100113. [DOI] [Google Scholar]
  22. Dan Z., Yang B., Song Q., Chen J., Li H., Gao W., Huang L., Zhang M., Yang M., Zheng Z., Huo N., Han L., Li J.. Type-II Bi2O2Se/MoTe2 van Der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance. ACS Appl. Mater. Interfaces. 2023;15(14):18101–18113. doi: 10.1021/acsami.3c01807. [DOI] [PubMed] [Google Scholar]
  23. Gui T., Xia X., Wei B., Zhang J., Zhang K., Li Y., Chen W., Yu W., Cui N., Mu H., Li Y., Pan S., Lin S.. In-Situ Fabrication of PtSe2/MoS2 van Der Waals Heterojunction for Self-Powered and Broadband Photodetector. Mater. Des. 2024;238:112722. doi: 10.1016/j.matdes.2024.112722. [DOI] [Google Scholar]
  24. Qiao J., Feng F., Wang Z., Shen M., Zhang G., Yuan X., Somekh M. G.. Highly In-Plane Anisotropic Two-Dimensional Ternary Ta2NiSe5 for Polarization-Sensitive Photodetectors. ACS Appl. Mater. Interfaces. 2021;13(15):17948–17956. doi: 10.1021/acsami.1c00268. [DOI] [PubMed] [Google Scholar]
  25. Zheng T., Yang M., Pan Y., Zheng Z., Sun Y., Li L., Huo N., Luo D., Gao W., Li J.. Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van Der Waals Dual Heterojunction. ACS Appl. Mater. Interfaces. 2023;15(24):29363–29374. doi: 10.1021/acsami.3c04147. [DOI] [PubMed] [Google Scholar]
  26. Li Z., Peng B., Lin M.-L., Leng Y.-C., Zhang B., Pang C., Tan P.-H., Monserrat B., Chen F.. Phonon-Assisted Electronic States Modulation of Few-Layer PdSe2 at Terahertz Frequencies. npj 2D Mater. Appl. 2021;5(1):87. doi: 10.1038/s41699-021-00268-3. [DOI] [Google Scholar]
  27. Zhang Y., Tian H., Li H., Yoon C., Nelson R. A., Li Z., Watanabe K., Taniguchi T., Smirnov D., Kawakami R. K., Goldberger J. E., Zhang F., Lau C. N.. Quantum Octets in High Mobility Pentagonal Two-Dimensional PdSe2 . Nat. Commun. 2024;15(1):761. doi: 10.1038/s41467-024-44972-2. [DOI] [PMC free article] [PubMed] [Google Scholar]
  28. Nishiyama W., Nishimura T., Ueno K., Taniguchi T., Watanabe K., Nagashio K.. Quantitative Determination of Contradictory Bandgap Values of Bulk PdSe2 from Electrical Transport Properties. Adv. Funct. Mater. 2022;32(9):2108061. doi: 10.1002/adfm.202108061. [DOI] [Google Scholar]
  29. Wang J., Liu W., Wang W., Wu Y., Xie Y., Chen Y.. High-Performance Ta2 NiSe5 -Based Broadband Photodetectors toward Self-Powered and Polarization-Sensitive Detection. ACS Appl. Mater. Interfaces. 2025;17(52):70955–70962. doi: 10.1021/acsami.5c19213. [DOI] [PubMed] [Google Scholar]
  30. Wei M., Lian J., Zhang Y., Wang C., Wang Y., Xu Z.. Layer-Dependent Optical and Dielectric Properties of Centimeter-Scale PdSe2 Films Grown by Chemical Vapor Deposition. npj 2D Mater. Appl. 2022;6(1):1. doi: 10.1038/s41699-021-00282-5. [DOI] [Google Scholar]
  31. Jiang Y., Wang R., Li X., Ma Z., Li L., Su J., Yan Y., Song X., Xia C.. Photovoltaic Field-Effect Photodiodes Based on Double van der Waals Heterojunctions. ACS Nano. 2021;15(9):14295–14304. doi: 10.1021/acsnano.1c02830. [DOI] [PubMed] [Google Scholar]
  32. Tian R., Gan X., Li C., Chen X., Hu S., Gu L., Van Thourhout D., Castellanos-Gomez A., Sun Z., Zhao J.. Chip-Integrated van der Waals PN Heterojunction Photodetector with Low Dark Current and High Responsivity. Light:Sci. Appl. 2022;11:101. doi: 10.1038/s41377-022-00784-x. [DOI] [PMC free article] [PubMed] [Google Scholar]
  33. Kim S., Kim M., Kim H.. Self-Powered Photodetectors Based on Two-Dimensional van der Waals Semiconductors. Nano Energy. 2024;127:109725. doi: 10.1016/j.nanoen.2024.109725. [DOI] [Google Scholar]
  34. Nahid S. M., Nam S., Van Der Zande A. M.. Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In2Se3 /Graphene Heterostructures. ACS Nano. 2024;18(22):14198–14206. doi: 10.1021/acsnano.3c11558. [DOI] [PubMed] [Google Scholar]
  35. Löwen A., Kolluru N., Miao Z., Tückmantel C., Kreusel C., Janicke S., Riedl T., Neumaier D.. Unconventional Photovoltaic Effect in a Perovskite-Coated Metal–Insulator–Graphene Photodiode. ACS Appl. Mater. Interfaces. 2025;17(6):9646–9654. doi: 10.1021/acsami.4c14665. [DOI] [PMC free article] [PubMed] [Google Scholar]
  36. Duan J., Chava P., Ghorbani-Asl M., Sofer Z., Krasheninnikov A. V., Pumera M.. et al. Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n–p Type-II Heterostructures. ACS Appl. Mater. Interfaces. 2022;14(9):11927–11936. doi: 10.1021/acsami.1c24308. [DOI] [PubMed] [Google Scholar]
  37. Wu D., Zhao Z., Lu W., Rogée L., Zeng L., Lin P., Shi Z., Tian Y., Li X., Tsang Y. H.. Highly Sensitive Solar-Blind Deep Ultraviolet Photodetector Based on Graphene/PtSe2/β-Ga2O3 2D/3D Schottky Junction with Ultrafast Speed. Nano Res. 2021;14(6):1973–1979. doi: 10.1007/s12274-021-3346-7. [DOI] [Google Scholar]
  38. Han X., Wen P., Zhang L., Gao W., Chen H., Gao F., Zhang S., Huo N., Zou B., Li J.. A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe2/TaIrTe4/n-MoS2 van Der Waals Heterojunction. ACS Appl. Mater. Interfaces. 2021;13(51):61544–61554. doi: 10.1021/acsami.1c19526. [DOI] [PubMed] [Google Scholar]
  39. Xie J., Han J., Jiang J., Liu L., Fu Z., Wang J.. Self-Powered, Broadband, and Polarization-Sensitive Photodetector with Nb-WS2/Ta2NiSe5 Van der Waals Heterostructure. Adv. Opt. Mater. 2025;13:2403463. doi: 10.1002/adom.202403463. [DOI] [Google Scholar]
  40. Zhang J., Li S., Zhu L., Zheng T., Li L., Deng Q., Huo N.. et al. Ultrafast, broadband and polarization-sensitive photodetector enabled by MoTe2/Ta2NiSe5/MoTe2 van der Waals dual heterojunction. Sci. China Mater. 2024;67(7):2182–2192. doi: 10.1007/s40843-024-2869-x. [DOI] [Google Scholar]
  41. Zhang Y., Yu W., Li J., Chen J., Dong Z., Xie L., Li C., Shi X., Guo W., Lin S., Mokkapati S., Zhang K.. Ultra-Broadband Photodetection Based on Two-Dimensional Layered Ta2NiSe5 with Strong Anisotropy and High Responsivity. Mater. Des. 2021;208:109894. doi: 10.1016/j.matdes.2021.109894. [DOI] [Google Scholar]
  42. Xiao P., Zhang S., Zhang L., Yang J., Shi C., Han L., Tang W., Zhu B.. Visible Near-Infrared Photodetection Based on Ta2NiSe5/WSe2 van der Waals Heterostructures. Sensors. 2023;23(9):4385. doi: 10.3390/s23094385. [DOI] [PMC free article] [PubMed] [Google Scholar]
  43. Xu R., Guo J., Mi S., Wen H., Pang F., Ji W., Cheng Z.. Advanced atomic force microscopies and their applications in two-dimensional materials: a review. Mater.Futures. 2022;1(3):032302. doi: 10.1088/2752-5724/ac8aba. [DOI] [Google Scholar]
  44. Ge H., Liu J., Sebek M., Li Z., Fu W., Wang Z., Wang Z.. AI-assisted wafer-scale exfoliation and transfer of 2D materials: Status, challenges and perspectives. AI Sci. 2025;1(1):013002. doi: 10.1088/3050-287X/ae0353. [DOI] [Google Scholar]

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Supplementary Materials

ao6c02784_si_001.pdf (495.7KB, pdf)

Data Availability Statement

The authors declare that data supporting the findings of this study are available within the paper. Further data sets are available from the corresponding.

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