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. 2003 Jul 15;112(2):298. doi: 10.1172/JCI200316921E

The voltage-gated Kv1.3 K+ channel in effector memory T cells as new target for MS

Heike Wulff, Peter A Calabresi, Rameeza Allie, Sung Yun, Michael Pennington, Christine Beeton, K George Chandy
PMCID: PMC164298

Original citation: J. Clin. Invest. 111:1703–1713 (2003). doi:10.1172/JCI200316921.

Citation for this erratum: J. Clin. Invest. 112:298 (2003). doi:10.1172/JCI200316921E.

During the preparation of this manuscript for publication, an error was introduced into Figure 2. The corrected figure and legend appear below. We regret this error.

Figure 2.

Figure 2

Cells with altered channel expression are phenotypically effector memory T cells. (a) Flow cytometry profiles showing CD45RA and CCR7 expression in MBP-specific TCLs from an MS patient and a control subject. (b) Kv1.3 channel number/cell versus percentage of CCR7+ cells in control TCLs stimulated three, seven, and ten times with MBP (filled squares) or TT (open triangles). The number of antigenic stimulations is shown in the figure next to each symbol. Twenty or more cells were studied from each sample. (c) IKCa1 channel number/cell versus percentage of CCR7+ cells in the same TCLs as in b. Fewer data points are included in the IKCa1 plot because the number of cells in some myelin antigen-specific TCL samples were not adequate to measure both Kv1.3 and IKCa1 expression in 20 cells each.


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