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Acta Crystallographica Section E: Structure Reports Online logoLink to Acta Crystallographica Section E: Structure Reports Online
. 2009 Dec 4;66(Pt 1):o20. doi: 10.1107/S1600536809050909

6-(1-Methyl­ethyl)-12-phenyl-5,6,7,12-tetra­hydro­dibenz[c,f][1,5]aza­silocine

Kei Goto a,*, Akihiro Fukushima b, Takayuki Kawashima b
PMCID: PMC2980245  PMID: 21580084

Abstract

The title compound, C23H25NSi, has an eight-membered silicon-containing heterocyclic ring with an intra­molecular N⋯Si close contact, the transannular distance of which is 2.6294 (18) Å. The resulting geometry about the Si atom is distorted trigonal-bypyramidal, with the N and H atoms occupying apical sites. The dihedral angle between the aromatic rings fused to the eight-membered ring is 63.27 (7)°.

Related literature

For highly coordinated organosilanes, see: Brellère et al. (1986); Carré et al. (1997); Paton et al. (1977); Woning & Verkade (1991); Yoshida et al. (2006). For a related structure, see: Saruhashi et al. (2001).graphic file with name e-66-00o20-scheme1.jpg

Experimental

Crystal data

  • C23H25NSi

  • M r = 343.53

  • Monoclinic, Inline graphic

  • a = 9.756 (7) Å

  • b = 10.269 (7) Å

  • c = 18.912 (12) Å

  • β = 92.745 (3)°

  • V = 1893 (2) Å3

  • Z = 4

  • Mo Kα radiation

  • μ = 0.13 mm−1

  • T = 120 K

  • 0.20 × 0.20 × 0.10 mm

Data collection

  • Rigaku Mercury CCD diffractometer

  • Absorption correction: multi-scan (REQAB; Jacobson, 1998) T min = 0.975, T max = 0.987

  • 11962 measured reflections

  • 3278 independent reflections

  • 2798 reflections with I > 2σ(I)

  • R int = 0.029

Refinement

  • R[F 2 > 2σ(F 2)] = 0.041

  • wR(F 2) = 0.100

  • S = 1.08

  • 3278 reflections

  • 232 parameters

  • H atoms treated by a mixture of independent and constrained refinement

  • Δρmax = 0.30 e Å−3

  • Δρmin = −0.30 e Å−3

Data collection: CrystalClear (Rigaku, 2004); cell refinement: CrystalClear data reduction: CrystalClear; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008); molecular graphics: ORTEPIII (Burnett & Johnson, 1996); software used to prepare material for publication: yadokari-XG (Wakita, 2005).

Supplementary Material

Crystal structure: contains datablocks I, global. DOI: 10.1107/S1600536809050909/is2498sup1.cif

e-66-00o20-sup1.cif (22.2KB, cif)

Structure factors: contains datablocks I. DOI: 10.1107/S1600536809050909/is2498Isup2.hkl

e-66-00o20-Isup2.hkl (160.8KB, hkl)

Additional supplementary materials: crystallographic information; 3D view; checkCIF report

Acknowledgments

This work was partly supported by the Global COE Program (Chemistry) and Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan. KG is grateful to Tokuyama Science Foundation for financial support. We also thank Tosoh Finechem Corporation for the generous gifts of alkyl­lithiums.

supplementary crystallographic information

Comment

Highly coordinated hydrosilanes have been of great interest for their unique structures and reactivities. It has been known that, in highly coordinated monohydrosilanes, the Si—H bond has high affinity for equatorial position (Brellère et al., 1986) and there are only a few examples with the Si—H bond at the apical position (Woning & Verkade, 1991). A dibenz[c,f][1,5]azasilocine framework has been utilized for the synthesis of various highly coordinated silicon compounds (Paton et al., 1977; Carré et al., 1997; Yoshida et al., 2006). Recently, we reported the synthesis and structural characterization of a pentacoordinated monohydrosilane bearing this molecular framework with the apical Si—H bond (Saruhashi et al., 2001). As a further investigation of this work, the crystal structure of the title new hydrosilane is reported.

The title compound was synthesized by the reaction of N,N-bis(2-bromobenzyl)isopropylamine (Carré et al., 1997) with n-butyllithium followed by treatment with phenylsilane. The molecular structure of the title compound is shown in Fig. 1. It was found that the geometry around the silicon atom is that of a distorted trigonal bypyramid with the sum of the equatorial C—Si—C bond angles of 346.3°. The SiH hydrogen atom occupies the apical site in spite of its lower apicophilicity than that of a phenyl group, which is similar to the related N-butyl compound we previously reported (Saruhashi et al., 2001). The Si···N transannular distance is 2.6294 (18) Å, which is slightly longer than that of the N-butyl derivative [2.516 (2) Å] probably because of the steric repulsion between the isopropyl group and the phenyl ring.

Experimental

A solution of n-butyllithium in hexane (1.6 M; 4.2 ml, 6.7 mmol) was added dropwise to a solution of N,N-bis(2-bromobenzyl)isopropylamine (1.25 g, 3.16 mmol) in ether (3 ml) at 233 K. The solution was stirred at the same temperature for 30 min and then allowed to warm to room temperature. After stirring for additional 2 h, the solution was cooled to 233 K, and a solution of phenylsilane (345 mg, 3.19 mmol) in ether (2 ml) was added dropwise. The mixture was allowed to warm to room temperature, and stirred overnight. After addition of water, the mixture was extracted with ether, and the organic layer was dried over anhydrous magnesium sulfate. After filtration and removal of the solvent, the residue was purified by gel permeation liquid chromatography (eluting with chloroform) and then recrystallization from hexane to give the title compound (101 mg, 0.295 mmol, 9.3%) as colorless crystals. Physical data: m.p. 354.1–355.8 K (decomposition); 1NMR (400 MHz, CDCl3, 300 K): δ 0.76 (br, 6H), 2.53 (br, 1H), 3.78 (s, 4H), 5.53 (brs, 1H), 7.12–7.32 (m, 9H), 7.51 (br, 2H), 7.72 (br, 2H). Anal. Calcd for C23H25NSi: C 80.41, H 7.34, N 4.08%. Found: C 80.19, H 7.48, N, 3.94%.

Refinement

The H atom of the SiH group was found in a difference Fourier map and refined isotropically, while the C-bound H atoms were treated as riding, with C—H = 0.95–0.99 Å, and with Uiso(H) = 1.2 (1.5 for methyl groups) times Ueq(C). The methyl groups were allowed to rotate freely about the C-C bond.

Figures

Fig. 1.

Fig. 1.

The molecular structure of (I) with 50% probability displacement ellipsoids (arbitrary spheres for H atoms).

Fig. 2.

Fig. 2.

Packing diagram.

Crystal data

C23H25NSi Z = 4
Mr = 343.53 F(000) = 736
Monoclinic, P21/c Dx = 1.206 Mg m3
Hall symbol: -P 2ybc Mo Kα radiation, λ = 0.71070 Å
a = 9.756 (7) Å θ = 3.0–25.0°
b = 10.269 (7) Å µ = 0.13 mm1
c = 18.912 (12) Å T = 120 K
β = 92.745 (3)° Block, colourless
V = 1893 (2) Å3 0.20 × 0.20 × 0.10 mm

Data collection

Rigaku Mercury CCD diffractometer 3278 independent reflections
Radiation source: fine-focus sealed tube 2798 reflections with I > 2σ(I)
graphite Rint = 0.029
ω scans θmax = 25.0°, θmin = 3.0°
Absorption correction: multi-scan (REQAB; Jacobson, 1998) h = −11→11
Tmin = 0.975, Tmax = 0.987 k = −12→9
11962 measured reflections l = −21→21

Refinement

Refinement on F2 Primary atom site location: structure-invariant direct methods
Least-squares matrix: full Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.041 Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.100 H atoms treated by a mixture of independent and constrained refinement
S = 1.08 w = 1/[σ2(Fo2) + (0.0402P)2 + 1.0221P] where P = (Fo2 + 2Fc2)/3
3278 reflections (Δ/σ)max < 0.001
232 parameters Δρmax = 0.30 e Å3
0 restraints Δρmin = −0.30 e Å3

Special details

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)

x y z Uiso*/Ueq
Si1 0.10808 (5) 0.12541 (5) 0.18691 (3) 0.02030 (15)
H1 0.0293 (18) 0.0512 (18) 0.2351 (9) 0.023 (5)*
C1 0.14424 (17) −0.00037 (17) 0.11833 (9) 0.0204 (4)
C2 0.17207 (17) 0.03310 (17) 0.04842 (9) 0.0210 (4)
C3 0.19436 (18) −0.06347 (19) −0.00083 (10) 0.0260 (4)
H2 0.2108 −0.0400 −0.0483 0.031*
C4 0.19306 (18) −0.19363 (19) 0.01801 (11) 0.0286 (4)
H3 0.2105 −0.2589 −0.0160 0.034*
C5 0.16617 (19) −0.22838 (18) 0.08669 (11) 0.0297 (5)
H4 0.1659 −0.3175 0.1001 0.036*
C6 0.13964 (18) −0.13231 (17) 0.13580 (10) 0.0239 (4)
H5 0.1179 −0.1569 0.1824 0.029*
C7 −0.01585 (18) 0.25743 (17) 0.15815 (9) 0.0213 (4)
C8 0.02098 (18) 0.36529 (17) 0.11797 (9) 0.0216 (4)
C9 −0.07488 (19) 0.46221 (18) 0.10020 (10) 0.0263 (4)
H6 −0.0488 0.5345 0.0725 0.032*
C10 −0.20760 (19) 0.4539 (2) 0.12252 (10) 0.0305 (5)
H7 −0.2716 0.5213 0.1113 0.037*
C11 −0.24688 (19) 0.3469 (2) 0.16127 (10) 0.0311 (5)
H8 −0.3385 0.3398 0.1758 0.037*
C12 −0.15189 (18) 0.25012 (19) 0.17883 (9) 0.0256 (4)
H9 −0.1797 0.1771 0.2055 0.031*
C13 0.17620 (17) 0.17561 (17) 0.02855 (9) 0.0223 (4)
H10 0.2334 0.1872 −0.0128 0.027*
H11 0.0823 0.2062 0.0153 0.027*
C14 0.16617 (18) 0.37943 (17) 0.09530 (10) 0.0230 (4)
H12 0.1655 0.4257 0.0494 0.028*
H13 0.2192 0.4327 0.1306 0.028*
N1 0.23330 (14) 0.25313 (14) 0.08823 (7) 0.0196 (3)
C15 0.38542 (17) 0.26790 (18) 0.08917 (10) 0.0231 (4)
H14 0.4150 0.3025 0.1369 0.028*
C16 0.45915 (18) 0.13896 (18) 0.08041 (10) 0.0267 (4)
H15 0.4229 0.0745 0.1128 0.040*
H16 0.5576 0.1508 0.0912 0.040*
H17 0.4445 0.1084 0.0315 0.040*
C17 0.4350 (2) 0.3648 (2) 0.03466 (11) 0.0331 (5)
H18 0.4060 0.3354 −0.0130 0.050*
H19 0.5353 0.3705 0.0387 0.050*
H20 0.3954 0.4507 0.0434 0.050*
C18 0.25657 (18) 0.18885 (17) 0.24348 (9) 0.0210 (4)
C19 0.37831 (18) 0.11897 (18) 0.25521 (9) 0.0253 (4)
H21 0.3880 0.0367 0.2330 0.030*
C20 0.48570 (19) 0.1670 (2) 0.29869 (10) 0.0317 (5)
H22 0.5678 0.1178 0.3056 0.038*
C21 0.4733 (2) 0.2858 (2) 0.33186 (11) 0.0361 (5)
H23 0.5466 0.3186 0.3616 0.043*
C22 0.3540 (2) 0.3568 (2) 0.32163 (11) 0.0356 (5)
H24 0.3448 0.4386 0.3444 0.043*
C23 0.24691 (19) 0.30841 (19) 0.27785 (10) 0.0281 (4)
H25 0.1652 0.3581 0.2712 0.034*

Atomic displacement parameters (Å2)

U11 U22 U33 U12 U13 U23
Si1 0.0192 (3) 0.0210 (3) 0.0206 (3) −0.0018 (2) −0.00047 (19) −0.0006 (2)
C1 0.0149 (8) 0.0215 (9) 0.0243 (10) −0.0014 (7) −0.0028 (7) −0.0001 (8)
C2 0.0130 (8) 0.0251 (10) 0.0246 (10) −0.0005 (7) −0.0015 (7) −0.0029 (8)
C3 0.0195 (9) 0.0328 (11) 0.0256 (10) −0.0031 (8) −0.0001 (7) −0.0060 (8)
C4 0.0201 (9) 0.0293 (10) 0.0361 (12) −0.0003 (8) −0.0025 (8) −0.0141 (9)
C5 0.0238 (10) 0.0184 (9) 0.0460 (13) −0.0011 (8) −0.0079 (9) −0.0037 (9)
C6 0.0212 (9) 0.0233 (10) 0.0268 (10) −0.0031 (7) −0.0044 (7) 0.0023 (8)
C7 0.0201 (9) 0.0248 (9) 0.0189 (9) −0.0010 (7) −0.0019 (7) −0.0079 (8)
C8 0.0215 (9) 0.0220 (9) 0.0207 (9) 0.0015 (7) −0.0046 (7) −0.0063 (8)
C9 0.0290 (10) 0.0235 (10) 0.0256 (10) 0.0036 (8) −0.0055 (8) −0.0070 (8)
C10 0.0255 (10) 0.0353 (11) 0.0297 (11) 0.0100 (9) −0.0081 (8) −0.0127 (9)
C11 0.0179 (9) 0.0450 (12) 0.0300 (11) 0.0035 (9) −0.0020 (8) −0.0149 (10)
C12 0.0238 (10) 0.0327 (11) 0.0203 (10) −0.0022 (8) 0.0007 (7) −0.0094 (8)
C13 0.0188 (9) 0.0274 (10) 0.0206 (10) −0.0002 (7) 0.0007 (7) 0.0020 (8)
C14 0.0234 (9) 0.0183 (9) 0.0272 (10) −0.0002 (7) −0.0011 (7) 0.0025 (8)
N1 0.0165 (7) 0.0190 (8) 0.0232 (8) −0.0006 (6) −0.0006 (6) 0.0012 (6)
C15 0.0162 (9) 0.0270 (10) 0.0261 (10) −0.0027 (7) −0.0007 (7) 0.0053 (8)
C16 0.0172 (9) 0.0296 (10) 0.0334 (11) 0.0003 (8) 0.0029 (8) 0.0043 (9)
C17 0.0226 (10) 0.0357 (11) 0.0410 (12) −0.0047 (9) 0.0020 (8) 0.0129 (10)
C18 0.0220 (9) 0.0243 (9) 0.0168 (9) −0.0031 (7) 0.0018 (7) 0.0027 (8)
C19 0.0262 (10) 0.0259 (10) 0.0238 (10) −0.0007 (8) 0.0015 (8) 0.0040 (8)
C20 0.0211 (10) 0.0394 (12) 0.0341 (12) −0.0002 (8) −0.0043 (8) 0.0106 (10)
C21 0.0276 (11) 0.0470 (13) 0.0328 (12) −0.0103 (10) −0.0081 (9) 0.0000 (10)
C22 0.0334 (11) 0.0378 (12) 0.0352 (12) −0.0057 (9) −0.0035 (9) −0.0114 (10)
C23 0.0233 (10) 0.0324 (11) 0.0285 (11) 0.0012 (8) −0.0007 (8) −0.0047 (9)

Geometric parameters (Å, °)

Si1—C1 1.876 (2) C13—H10 0.9900
Si1—C18 1.876 (2) C13—H11 0.9900
Si1—C7 1.880 (2) C14—N1 1.462 (2)
Si1—H1 1.438 (18) C14—H12 0.9900
C1—C6 1.396 (3) C14—H13 0.9900
C1—C2 1.405 (3) N1—C15 1.491 (2)
C2—C3 1.385 (3) C15—C16 1.520 (3)
C2—C13 1.512 (3) C15—C17 1.528 (3)
C3—C4 1.384 (3) C15—H14 1.0000
C3—H2 0.9500 C16—H15 0.9800
C4—C5 1.384 (3) C16—H16 0.9800
C4—H3 0.9500 C16—H17 0.9800
C5—C6 1.388 (3) C17—H18 0.9800
C5—H4 0.9500 C17—H19 0.9800
C6—H5 0.9500 C17—H20 0.9800
C7—C8 1.400 (3) C18—C23 1.394 (3)
C7—C12 1.403 (3) C18—C19 1.396 (3)
C8—C9 1.396 (3) C19—C20 1.391 (3)
C8—C14 1.506 (3) C19—H21 0.9500
C9—C10 1.384 (3) C20—C21 1.380 (3)
C9—H6 0.9500 C20—H22 0.9500
C10—C11 1.385 (3) C21—C22 1.380 (3)
C10—H7 0.9500 C21—H23 0.9500
C11—C12 1.388 (3) C22—C23 1.393 (3)
C11—H8 0.9500 C22—H24 0.9500
C12—H9 0.9500 C23—H25 0.9500
C13—N1 1.469 (2)
Si1···N1 2.6294 (18)
C1—Si1—C18 117.89 (8) C2—C13—H11 109.6
C1—Si1—C7 115.86 (8) H10—C13—H11 108.1
C18—Si1—C7 112.52 (9) N1—C14—C8 111.83 (14)
C1—Si1—N1 75.14 (8) N1—C14—H12 109.2
C18—Si1—N1 81.91 (8) C8—C14—H12 109.2
C7—Si1—N1 75.47 (8) N1—C14—H13 109.2
C1—Si1—H1 101.4 (7) C8—C14—H13 109.2
C18—Si1—H1 104.2 (7) H12—C14—H13 107.9
C7—Si1—H1 102.1 (7) C14—N1—C13 113.33 (14)
N1—Si1—H1 173.9 (7) C14—N1—C15 111.02 (14)
C6—C1—C2 118.03 (16) C13—N1—C15 113.88 (14)
C6—C1—Si1 119.71 (14) C14—N1—Si1 98.76 (11)
C2—C1—Si1 122.24 (14) C13—N1—Si1 95.92 (11)
C3—C2—C1 120.09 (17) C15—N1—Si1 122.57 (10)
C3—C2—C13 121.27 (17) N1—C15—C16 112.71 (15)
C1—C2—C13 118.63 (15) N1—C15—C17 113.89 (14)
C4—C3—C2 120.99 (18) C16—C15—C17 109.11 (16)
C4—C3—H2 119.5 N1—C15—H14 106.9
C2—C3—H2 119.5 C16—C15—H14 106.9
C3—C4—C5 119.69 (18) C17—C15—H14 106.9
C3—C4—H3 120.2 C15—C16—H15 109.5
C5—C4—H3 120.2 C15—C16—H16 109.5
C4—C5—C6 119.64 (18) H15—C16—H16 109.5
C4—C5—H4 120.2 C15—C16—H17 109.5
C6—C5—H4 120.2 H15—C16—H17 109.5
C5—C6—C1 121.51 (18) H16—C16—H17 109.5
C5—C6—H5 119.2 C15—C17—H18 109.5
C1—C6—H5 119.2 C15—C17—H19 109.5
C8—C7—C12 117.67 (17) H18—C17—H19 109.5
C8—C7—Si1 123.33 (14) C15—C17—H20 109.5
C12—C7—Si1 118.98 (14) H18—C17—H20 109.5
C9—C8—C7 120.56 (17) H19—C17—H20 109.5
C9—C8—C14 119.41 (17) C23—C18—C19 117.03 (16)
C7—C8—C14 120.01 (15) C23—C18—Si1 120.26 (14)
C10—C9—C8 120.55 (19) C19—C18—Si1 122.68 (14)
C10—C9—H6 119.7 C20—C19—C18 121.52 (18)
C8—C9—H6 119.7 C20—C19—H21 119.2
C9—C10—C11 119.83 (18) C18—C19—H21 119.2
C9—C10—H7 120.1 C21—C20—C19 120.14 (18)
C11—C10—H7 120.1 C21—C20—H22 119.9
C10—C11—C12 119.74 (18) C19—C20—H22 119.9
C10—C11—H8 120.1 C22—C21—C20 119.69 (18)
C12—C11—H8 120.1 C22—C21—H23 120.2
C11—C12—C7 121.62 (19) C20—C21—H23 120.2
C11—C12—H9 119.2 C21—C22—C23 119.9 (2)
C7—C12—H9 119.2 C21—C22—H24 120.1
N1—C13—C2 110.32 (14) C23—C22—H24 120.1
N1—C13—H10 109.6 C22—C23—C18 121.72 (18)
C2—C13—H10 109.6 C22—C23—H25 119.1
N1—C13—H11 109.6 C18—C23—H25 119.1
C18—Si1—C1—C6 90.22 (15) C7—C8—C14—N1 27.9 (2)
C7—Si1—C1—C6 −132.20 (14) C8—C14—N1—C13 68.82 (19)
N1—Si1—C1—C6 162.45 (15) C8—C14—N1—C15 −161.54 (14)
C18—Si1—C1—C2 −91.80 (15) C8—C14—N1—Si1 −31.55 (15)
C7—Si1—C1—C2 45.78 (17) C2—C13—N1—C14 −142.27 (15)
N1—Si1—C1—C2 −19.57 (13) C2—C13—N1—C15 89.55 (17)
C6—C1—C2—C3 −0.2 (2) C2—C13—N1—Si1 −40.07 (14)
Si1—C1—C2—C3 −178.19 (13) C1—Si1—N1—C14 148.32 (11)
C6—C1—C2—C13 179.50 (15) C18—Si1—N1—C14 −89.90 (12)
Si1—C1—C2—C13 1.5 (2) C7—Si1—N1—C14 25.98 (11)
C1—C2—C3—C4 −1.6 (3) C1—Si1—N1—C13 33.57 (10)
C13—C2—C3—C4 178.74 (16) C18—Si1—N1—C13 155.34 (11)
C2—C3—C4—C5 1.4 (3) C7—Si1—N1—C13 −88.77 (11)
C3—C4—C5—C6 0.5 (3) C1—Si1—N1—C15 −89.73 (13)
C4—C5—C6—C1 −2.4 (3) C18—Si1—N1—C15 32.04 (13)
C2—C1—C6—C5 2.2 (3) C7—Si1—N1—C15 147.92 (14)
Si1—C1—C6—C5 −179.79 (13) C14—N1—C15—C16 −178.81 (15)
C1—Si1—C7—C8 −79.90 (16) C13—N1—C15—C16 −49.5 (2)
C18—Si1—C7—C8 59.91 (17) Si1—N1—C15—C16 65.15 (18)
N1—Si1—C7—C8 −14.73 (13) C14—N1—C15—C17 −53.8 (2)
C1—Si1—C7—C12 101.44 (15) C13—N1—C15—C17 75.5 (2)
C18—Si1—C7—C12 −118.76 (14) Si1—N1—C15—C17 −169.85 (12)
N1—Si1—C7—C12 166.60 (15) C1—Si1—C18—C23 158.83 (14)
C12—C7—C8—C9 0.7 (2) C7—Si1—C18—C23 19.91 (17)
Si1—C7—C8—C9 −177.93 (13) N1—Si1—C18—C23 90.44 (15)
C12—C7—C8—C14 178.98 (16) C1—Si1—C18—C19 −23.30 (18)
Si1—C7—C8—C14 0.3 (2) C7—Si1—C18—C19 −162.22 (14)
C7—C8—C9—C10 0.6 (3) N1—Si1—C18—C19 −91.69 (15)
C14—C8—C9—C10 −177.69 (17) C23—C18—C19—C20 −0.6 (3)
C8—C9—C10—C11 −1.7 (3) Si1—C18—C19—C20 −178.53 (14)
C9—C10—C11—C12 1.4 (3) C18—C19—C20—C21 0.4 (3)
C10—C11—C12—C7 −0.1 (3) C19—C20—C21—C22 −0.1 (3)
C8—C7—C12—C11 −1.0 (3) C20—C21—C22—C23 −0.1 (3)
Si1—C7—C12—C11 177.76 (14) C21—C22—C23—C18 0.0 (3)
C3—C2—C13—N1 −145.26 (16) C19—C18—C23—C22 0.4 (3)
C1—C2—C13—N1 35.1 (2) Si1—C18—C23—C22 178.38 (15)
C9—C8—C14—N1 −153.86 (16)

Footnotes

Supplementary data and figures for this paper are available from the IUCr electronic archives (Reference: IS2498).

References

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Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Supplementary Materials

Crystal structure: contains datablocks I, global. DOI: 10.1107/S1600536809050909/is2498sup1.cif

e-66-00o20-sup1.cif (22.2KB, cif)

Structure factors: contains datablocks I. DOI: 10.1107/S1600536809050909/is2498Isup2.hkl

e-66-00o20-Isup2.hkl (160.8KB, hkl)

Additional supplementary materials: crystallographic information; 3D view; checkCIF report


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