Abstract
The asymmetric unit of the title compound, C8H8Br2O2, contains one half-molecule, the complete molecule being generated by inversion symmetry.
Related literature
For standard bond lengths, see: Allen et al. (1987 ▶). For the synthetic procedure, see: Lopez-Alvarado et al. (2002 ▶). For potential uses of compounds derived from the title compound, see: Chen et al. (2006 ▶).
Experimental
Crystal data
C8H8Br2O2
M r = 295.94
Monoclinic,
a = 6.573 (1) Å
b = 8.438 (2) Å
c = 8.756 (2) Å
β = 90.14 (3)°
V = 485.6 (2) Å3
Z = 2
Mo Kα radiation
μ = 8.30 mm−1
T = 298 K
0.20 × 0.10 × 0.10 mm
Data collection
Enraf–Nonius CAD-4 diffractometer
Absorption correction: ψ scan (North et al., 1968 ▶) T min = 0.288, T max = 0.491
1761 measured reflections
884 independent reflections
622 reflections with I > 2σ(I)
R int = 0.112
3 standard reflections every 200 reflections intensity decay: 1%
Refinement
R[F 2 > 2σ(F 2)] = 0.044
wR(F 2) = 0.102
S = 1.01
884 reflections
55 parameters
H-atom parameters constrained
Δρmax = 0.58 e Å−3
Δρmin = −0.41 e Å−3
Data collection: CAD-4 Software (Enraf–Nonius, 1985 ▶); cell refinement: CAD-4 Software; data reduction: XCAD4 (Harms & Wocadlo, 1995 ▶); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: SHELXTL (Sheldrick, 2008 ▶); software used to prepare material for publication: SHELXTL.
Supplementary Material
Crystal structure: contains datablocks I, lzh. DOI: 10.1107/S1600536810023548/im2205sup1.cif
Structure factors: contains datablocks I. DOI: 10.1107/S1600536810023548/im2205Isup2.hkl
Additional supplementary materials: crystallographic information; 3D view; checkCIF report
Acknowledgments
The authors thank the Center of Testing and Analysis, Nanjing University, for support.
supplementary crystallographic information
Comment
The title compound, 1,4-dibromo-2,5-dimethoxybenzene is an important intermediate in the synthesis of 4-(2',5'-dimethoxy-4'-acetylthiophenyl)phenyl-nonafluorobiphenyl, which can be used as molecular switch, transistor and in the manufacture of memory devices (Chen et al., 2006). We report here the crystal structure of the title compound, (I).
The molecular structure of (I) is shown in Fig. 1. Bond lengths and angles are within normal ranges (Allen et al., 1987).
The benzene ring is planar and it's center respresents a crystallographic center of inversion. So only half of the molecule was observed in the asymmetric unit. No hydrogen bond interactions were observed in the crystal structure.
Experimental
The title compound, (I) was synthesized according to a literature method reported before (Lopez-Alvarado et al., 2002). Single crystals were obtained by slow evaporation of a methanolic (25 ml) solution of the compound (0.30 g, 1.0 mmol) at room temperature for about 15 d.
Refinement
H atoms were positioned geometrically, with C—H = 0.93 Å for aromatic H and 0.96 Å for methyl H, and constrained to ride on their parent atoms, with Uiso(H) = xUeq(C/O), where x = 1.2 for aromatic H and x = 1.5 for other H.
Figures
Fig. 1.
Molecular structure of the title compound showing the atom-numbering scheme. Displacement ellipsoids are drawn at the 40% probability level.
Fig. 2.
Molecular packing of the title compound.
Crystal data
| C8H8Br2O2 | F(000) = 284 |
| Mr = 295.94 | Dx = 2.024 Mg m−3 |
| Monoclinic, P21/n | Mo Kα radiation, λ = 0.71073 Å |
| Hall symbol: -P 2yn | Cell parameters from 25 reflections |
| a = 6.573 (1) Å | θ = 9–13° |
| b = 8.438 (2) Å | µ = 8.30 mm−1 |
| c = 8.756 (2) Å | T = 298 K |
| β = 90.14 (3)° | Block, colourless |
| V = 485.6 (2) Å3 | 0.20 × 0.10 × 0.10 mm |
| Z = 2 |
Data collection
| Enraf–Nonius CAD-4 diffractometer | 622 reflections with I > 2σ(I) |
| Radiation source: fine-focus sealed tube | Rint = 0.112 |
| graphite | θmax = 25.3°, θmin = 3.4° |
| ω/2θ scans | h = −7→7 |
| Absorption correction: ψ scan (North et al., 1968) | k = −10→0 |
| Tmin = 0.288, Tmax = 0.491 | l = −10→10 |
| 1761 measured reflections | 3 standard reflections every 200 reflections |
| 884 independent reflections | intensity decay: 1% |
Refinement
| Refinement on F2 | Primary atom site location: structure-invariant direct methods |
| Least-squares matrix: full | Secondary atom site location: difference Fourier map |
| R[F2 > 2σ(F2)] = 0.044 | Hydrogen site location: inferred from neighbouring sites |
| wR(F2) = 0.102 | H-atom parameters constrained |
| S = 1.01 | w = 1/[σ2(Fo2) + (0.03P)2 + 0.0P] where P = (Fo2 + 2Fc2)/3 |
| 884 reflections | (Δ/σ)max < 0.001 |
| 55 parameters | Δρmax = 0.58 e Å−3 |
| 0 restraints | Δρmin = −0.41 e Å−3 |
Special details
| Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes. |
| Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger. |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)
| x | y | z | Uiso*/Ueq | ||
| Br | 0.26386 (11) | 0.73471 (7) | 0.78061 (8) | 0.0598 (3) | |
| O | −0.1091 (7) | 0.5578 (5) | 0.7000 (5) | 0.0551 (11) | |
| C1 | −0.0605 (9) | 0.5256 (6) | 0.8479 (6) | 0.0394 (13) | |
| C2 | 0.1090 (9) | 0.5986 (5) | 0.9077 (7) | 0.0400 (13) | |
| C3 | 0.1721 (9) | 0.5752 (5) | 1.0558 (7) | 0.0433 (14) | |
| H3A | 0.2881 | 0.6260 | 1.0922 | 0.052* | |
| C4 | −0.2593 (11) | 0.4649 (8) | 0.6294 (8) | 0.0649 (19) | |
| H4A | −0.2775 | 0.4993 | 0.5257 | 0.097* | |
| H4B | −0.3852 | 0.4761 | 0.6837 | 0.097* | |
| H4C | −0.2181 | 0.3558 | 0.6304 | 0.097* |
Atomic displacement parameters (Å2)
| U11 | U22 | U33 | U12 | U13 | U23 | |
| Br | 0.0762 (5) | 0.0516 (4) | 0.0517 (5) | −0.0207 (3) | 0.0162 (3) | 0.0026 (3) |
| O | 0.065 (3) | 0.055 (2) | 0.045 (3) | −0.011 (2) | −0.004 (2) | 0.0031 (19) |
| C1 | 0.049 (3) | 0.036 (3) | 0.033 (3) | 0.002 (3) | 0.007 (3) | −0.003 (2) |
| C2 | 0.047 (3) | 0.031 (3) | 0.042 (4) | −0.004 (3) | 0.009 (3) | −0.002 (2) |
| C3 | 0.049 (3) | 0.034 (3) | 0.046 (4) | −0.006 (3) | 0.007 (3) | −0.003 (2) |
| C4 | 0.070 (5) | 0.078 (4) | 0.047 (5) | −0.004 (4) | −0.014 (4) | 0.009 (4) |
Geometric parameters (Å, °)
| Br—C2 | 1.897 (5) | C3—C1i | 1.405 (7) |
| O—C1 | 1.361 (7) | C3—H3A | 0.9300 |
| O—C4 | 1.403 (8) | C4—H4A | 0.9600 |
| C1—C2 | 1.375 (8) | C4—H4B | 0.9600 |
| C1—C3i | 1.405 (7) | C4—H4C | 0.9600 |
| C2—C3 | 1.375 (8) | ||
| C1—O—C4 | 118.1 (5) | C2—C3—H3A | 120.1 |
| O—C1—C2 | 117.4 (5) | C1i—C3—H3A | 120.1 |
| O—C1—C3i | 124.8 (5) | O—C4—H4A | 109.5 |
| C2—C1—C3i | 117.8 (5) | O—C4—H4B | 109.5 |
| C1—C2—C3 | 122.5 (5) | H4A—C4—H4B | 109.5 |
| C1—C2—Br | 118.9 (4) | O—C4—H4C | 109.5 |
| C3—C2—Br | 118.6 (4) | H4A—C4—H4C | 109.5 |
| C2—C3—C1i | 119.7 (5) | H4B—C4—H4C | 109.5 |
| C4—O—C1—C2 | 169.3 (5) | O—C1—C2—Br | −1.0 (6) |
| C4—O—C1—C3i | −11.4 (8) | C3i—C1—C2—Br | 179.7 (4) |
| O—C1—C2—C3 | 179.8 (5) | C1—C2—C3—C1i | −0.5 (8) |
| C3i—C1—C2—C3 | 0.5 (8) | Br—C2—C3—C1i | −179.7 (4) |
Symmetry codes: (i) −x, −y+1, −z+2.
Footnotes
Supplementary data and figures for this paper are available from the IUCr electronic archives (Reference: IM2205).
References
- Allen, F. H., Kennard, O., Watson, D. G., Brammer, L., Orpen, A. G. & Taylor, R. (1987). J. Chem. Soc. Perkin Trans. 2, pp. S1–19.
- Chen, Z. K., Huang, C., Yang, J. S., O’Shea, S. & Loh, K. P. (2006). National University of Singapore, Singapore. WO patent number. 2006093467.
- Enraf–Nonius (1985). CAD-4 Software Enraf–Nonius, Delft, The Netherlands.
- Harms, K. & Wocadlo, S. (1995). XCAD4 University of Marburg, Germany.
- Lopez-Alvarado, P., Avendano, C. & Menendez, J. C. (2002). Synthetic. Commun.32, 3233–3239.
- North, A. C. T., Phillips, D. C. & Mathews, F. S. (1968). Acta Cryst. A24, 351–359.
- Sheldrick, G. M. (2008). Acta Cryst. A64, 112–122. [DOI] [PubMed]
Associated Data
This section collects any data citations, data availability statements, or supplementary materials included in this article.
Supplementary Materials
Crystal structure: contains datablocks I, lzh. DOI: 10.1107/S1600536810023548/im2205sup1.cif
Structure factors: contains datablocks I. DOI: 10.1107/S1600536810023548/im2205Isup2.hkl
Additional supplementary materials: crystallographic information; 3D view; checkCIF report


