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Acta Crystallographica Section E: Structure Reports Online logoLink to Acta Crystallographica Section E: Structure Reports Online
. 2011 Jan 22;67(Pt 2):i20. doi: 10.1107/S1600536810054425

Redetermination of MoPt3Si4 from single-crystal data

Stephane Knittel a, Michel Francois a, Jean Steinmetz a, Michel Vilasi a,*
PMCID: PMC3051478  PMID: 21522816

Abstract

The crystal structure of molybdenum triplatinum tetrasilicide, MoPt3Si4, determined previously from powder diffraction data [Joubert et al. (2010 ▶). J. Solid State Chem. 183, 173–179], has been redetermined using a single crystal synthesized from the elements by high-frequency melting. The redetermination provides more precise geometrical data and also anisotropic displacement parameters. The crystal structure can be considered to be derived from the PtSi structure type with an ordered substitution of Pt by Mo atoms, but leading to a very distorted Si network compared to the parent structure. Mo and Pt exhibit different coordination polyhedra. These are based on bicapped-square anti­prisms, but with two additional vertices in cis positions for Mo, whereas they are in trans positions for Pt (as in PtSi). The coordination polyhedra for three of the Si atoms can be considered as highly deformed square anti­prisms (as in PtSi), while the fourth Si atom has a bicapped trigonal–prismatic coordination geometry.

Related literature

For general background to molybdenum silicides, see: Littner (2003 ▶); Benarchid et al. (2009 ▶); Bernard et al. (2010 ▶); Cabouro et al. (2007 ▶, 2008 ▶); Fitzer (1955 ▶); Knittel et al. (2010 ▶). For the structure determination of the title compound from standard X-ray powder diffraction data, see: Joubert et al. (2010 ▶). For the PAP correction program, see: Pouchou & Pichoir (1984 ▶).

Experimental

Crystal data

  • MoPt3Si4

  • M r = 793.57

  • Orthorhombic, Inline graphic

  • a = 5.5121 (2) Å

  • b = 3.4951 (1) Å

  • c = 24.3078 (7) Å

  • V = 468.30 (3) Å3

  • Z = 4

  • Mo Kα radiation

  • μ = 92.80 mm−1

  • T = 297 K

  • 0.12 × 0.03 × 0.03 mm

Data collection

  • Bruker APEXII QUAZAR CCD diffractometer

  • Absorption correction: multi-scan (SADABS; Bruker, 2004 ▶) T min = 0.031, T max = 0.174

  • 9779 measured reflections

  • 1060 independent reflections

  • 955 reflections with I > 2σ(I)

  • R int = 0.040

Refinement

  • R[F 2 > 2σ(F 2)] = 0.029

  • wR(F 2) = 0.067

  • S = 1.41

  • 1060 reflections

  • 50 parameters

  • Δρmax = 2.16 e Å−3

  • Δρmin = −3.81 e Å−3

Data collection: APEX2 (Bruker, 2004 ▶); cell refinement: SAINT (Bruker, 2004 ▶); data reduction: SAINT; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: DIAMOND (Brandenburg, 1999 ▶) and ORTEP-3 (Farrugia, 1997 ▶); software used to prepare material for publication: SHELXL97.

Supplementary Material

Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536810054425/fi2101sup1.cif

e-67-00i20-sup1.cif (25.9KB, cif)

Structure factors: contains datablocks I. DOI: 10.1107/S1600536810054425/fi2101Isup2.hkl

e-67-00i20-Isup2.hkl (51.5KB, hkl)

Additional supplementary materials: crystallographic information; 3D view; checkCIF report

Table 1. Selected bond lengths (Å).

Pt1—Si3i 2.406 (3)
Pt1—Pt1ii 2.9119 (6)
Pt2—Si1iii 2.387 (3)
Pt2—Mo1iv 2.9331 (10)
Pt3—Si3 2.405 (2)
Pt3—Pt2 2.8874 (5)
Mo1—Si4 2.535 (2)
Mo1—Pt2iii 2.9331 (10)
Si1—Pt2iv 2.387 (3)
Si1—Si2 2.711 (3)
Si2—Pt3 2.466 (3)
Si2—Si1 2.711 (3)
Si3—Pt1v 2.590 (2)
Si3—Si3vi 2.807 (5)
Si4—Pt2v 2.407 (2)
Si4—Si4vii 3.012 (5)

Symmetry codes: (i) Inline graphic; (ii) Inline graphic; (iii) Inline graphic; (iv) Inline graphic; (v) Inline graphic; (vi) Inline graphic; (vii) Inline graphic.

Acknowledgments

We thank Dr Holger Ott (Bruker AXS GmbH, Karlsruhe, Germany) for the data collection and the ’Service Commun de Microanalyse’ (Faculté des Sciences et Techniques, Vandoeuvre les Nancy, France).

supplementary crystallographic information

Comment

Interest for studying the Mo—MP—Si (MP = Pt, Ru) system follows from the attractive properties of MoSi2 regarding high-temperature oxidation. But early in the past, the first studies performed by Fitzer (1955) mentioned the poor behaviour of this material under oxidizing atmosphere at moderate temperatures (300–600°C) due to a catastrophic degradation, the so-called "pest phenomenon". Consequently, one of the challenges for application of MoSi2 is to control the pest oxidation by adding alloying elements (Ru, Pt, B, Al, Ge, Y, Ti, Zr, Ta) (Littner, 2003, Benarchid et al. 2009) and/or by controlling the microstructure. Recently, the optimization of the microstructure led to fully densified materials showing dramatically improved oxidation performance of MoSi2 (Cabouro et al., 2007, Cabouro et al., 2008, Knittel et al., 2010), Bernard et al., 2010. In the course of our studies focused on the evaluation of the effect of elemental substitutions, we studied the isothermal section of the ternary phase diagram Mo—Pt—Si at 1423 K. Two new phases of composition MoPt2Si3 and MoPt3Si4 were identified (Littner, 2003), and MoPt3Si4 was indexed in the orthorhombic system: a = 5.5096 Å, b = 3.493 Å, c = 24.294 Å. The structure of MoPt3Si4 was recently published by Joubert et al. (2010), from powder X-ray diffraction data. It turned out that the MoPt3Si4 structure can be derived from PtSi by an ordered substitution of Pt by Mo. The atomic arrangement along the c axis leads to a fourfold superstructure, with c(MoPt3Si4) = 4 × c(PtSi). Our analysis based on single-crystal data confirms the previous results but yields more accurate atomic positions, approximately by one order of magnitude. Additionally, this also allows determination of anisotropic displacement parameters (Fig. 1). Fig. 2 shows the coordination polyhedra. The coordination number for each d metal is 10, for Si it is 8. Mo and Pt exhibit different coordination polyhedra. In both cases, these are based on bicapped-square antiprisms, but with two additional vertices in cis-positions for Mo whereas they are in trans-positions for Pt (as in PtSi). The coordination polyhedra for Si1, Si2 and Si3 atoms can be considered as highly deformed square antiprisms (as in PtSi), while Si4 has a bicapped trigonal prismatic coordination geometry. Shortest and longest interatomic distances for each coordination polyedra are reported in Table 1. The shortest distances found for Mo—Si and Pt—Si are 2.535 (2) Å and of 2.387 (3) Å respectively. These may be compared to the values given by Joubert et al. (2010), namely 2.463 Å and 2.355 Å.

Figure 3 also emphasizes that the corrugated ribbons formed by the silicon sub-network and expanded along the c axis are greatly distorted compared to the PtSi parent structure.

Experimental

Metal powders with nominal purities > 99.9 (Pt sponge 270 mesh - Engelhard - Clal, Si and Mo 325 mesh: Cerac) were mixed in different atomic ratios corresponding to alloys belonging to the MoSi2—Mo5Si3—PtSi domain. An ingot was prepared by high frequency melting, and stabilized in a thermodynamic equilibrium for 100 h at 1150°C under argon. Single crystals of Pt3MoSi4 were directly isolated from the crushed ingot. A part of the ingot was embedded in an epoxy resin, polished and microanalyzed by an electron probe (SX 50 CAMECA, - PAP correction program (Pouchou & Pichoir, 1984). The EPMA composition corresponds, within the accuracy of the measurement, to that obtained by the structural determination.

Refinement

Maximum residual electron density: highest peak 2.16 found at 0.75 Å from Pt2 and minimum residual electron density: highest hole -3.81 found at 1.22 Å from Si4

Figures

Fig. 1.

Fig. 1.

Plot of the asymmetric unit of MoPt3Si4. The displacement ellipsoids are drawn at the 75% probability level. Atoms are bonded for interatomic distances lower than 3.1 Å.

Fig. 2.

Fig. 2.

The unit cell and the coordination polyhedra of the atoms in the structure of MoPt3Si4. Si in blue, Pt in light grey, Mo in yellow.

Fig. 3.

Fig. 3.

Corrugated ribbons from Si atoms in the structure of PtSi and MoPt3Si4.

Crystal data

MoPt3Si4 Dx = 11.256 Mg m−3
Mr = 793.57 Melting point: 1503 K
Orthorhombic, Pnma Mo Kα radiation, λ = 0.71073 Å
Hall symbol: -P 2ac 2n Cell parameters from 4246 reflections
a = 5.5121 (2) Å θ = 3.4–33.7°
b = 3.4951 (1) Å µ = 92.80 mm−1
c = 24.3078 (7) Å T = 297 K
V = 468.30 (3) Å3 Needle, metallic colourless
Z = 4 0.12 × 0.03 × 0.03 mm
F(000) = 1328

Data collection

Bruker APEXII QUAZAR CCD diffractometer 1060 independent reflections
Radiation source: ImuS 955 reflections with I > 2σ(I)
graphite Rint = 0.040
ω scans θmax = 33.7°, θmin = 1.7°
Absorption correction: multi-scan (SADABS; Bruker, 2004) h = −8→8
Tmin = 0.031, Tmax = 0.174 k = −5→5
9779 measured reflections l = −34→37

Refinement

Refinement on F2 Primary atom site location: structure-invariant direct methods
Least-squares matrix: full Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.029 w = 1/[σ2(Fo2) + (0.0069P)2 + 14.4673P] where P = (Fo2 + 2Fc2)/3
wR(F2) = 0.067 (Δ/σ)max = 0.001
S = 1.41 Δρmax = 2.16 e Å−3
1060 reflections Δρmin = −3.81 e Å−3
50 parameters Extinction correction: SHELXL97 (Sheldrick, 2008), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
0 restraints Extinction coefficient: 0.00129 (7)

Special details

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)

x y z Uiso*/Ueq
Pt1 0.50285 (7) 0.2500 0.547907 (16) 0.00783 (11)
Pt2 0.00468 (7) −0.2500 0.669289 (16) 0.00688 (11)
Pt3 0.00210 (7) 0.2500 0.574730 (17) 0.00783 (11)
Mo1 −0.49497 (15) −0.2500 0.71035 (4) 0.00562 (16)
Si1 0.6616 (6) −0.2500 0.60935 (12) 0.0071 (5)
Si2 0.3216 (6) 0.2500 0.64573 (12) 0.0072 (5)
Si3 0.1790 (6) −0.2500 0.51984 (12) 0.0076 (5)
Si4 −0.1678 (6) −0.7500 0.72502 (12) 0.0071 (5)

Atomic displacement parameters (Å2)

U11 U22 U33 U12 U13 U23
Pt1 0.00828 (19) 0.00729 (18) 0.00793 (19) 0.000 0.00011 (13) 0.000
Pt2 0.00732 (18) 0.00574 (16) 0.00759 (19) 0.000 0.00034 (13) 0.000
Pt3 0.00835 (18) 0.00728 (17) 0.00787 (18) 0.000 −0.00006 (13) 0.000
Mo1 0.0068 (3) 0.0044 (3) 0.0057 (3) 0.000 0.0003 (3) 0.000
Si1 0.0086 (11) 0.0063 (11) 0.0064 (12) 0.000 −0.0006 (10) 0.000
Si2 0.0092 (12) 0.0055 (12) 0.0068 (12) 0.000 −0.0021 (10) 0.000
Si3 0.0090 (12) 0.0063 (12) 0.0075 (11) 0.000 0.0004 (10) 0.000
Si4 0.0099 (12) 0.0033 (11) 0.0082 (12) 0.000 −0.0006 (10) 0.000

Geometric parameters (Å, °)

Pt1—Si3i 2.406 (3) Mo1—Si1v 2.602 (3)
Pt1—Si1 2.460 (2) Mo1—Pt2xi 2.9256 (10)
Pt1—Si1ii 2.460 (2) Mo1—Pt2 2.929 (1)
Pt1—Si2 2.579 (3) Mo1—Pt2v 2.9331 (10)
Pt1—Si3 2.590 (2) Si1—Pt2iii 2.387 (3)
Pt1—Si3ii 2.590 (2) Si1—Pt1vi 2.460 (2)
Pt1—Pt3iii 2.8281 (6) Si1—Pt1 2.460 (2)
Pt1—Pt3 2.8362 (6) Si1—Mo1iii 2.602 (3)
Pt1—Pt1i 2.9119 (6) Si1—Pt3iii 2.699 (2)
Pt1—Pt1iv 2.9119 (6) Si1—Pt3xiii 2.699 (2)
Pt2—Si1v 2.387 (3) Si1—Si2vi 2.711 (3)
Pt2—Si4ii 2.407 (2) Si1—Si2 2.711 (3)
Pt2—Si4 2.407 (2) Si2—Pt3 2.466 (3)
Pt2—Si2 2.536 (2) Si2—Pt2ii 2.536 (2)
Pt2—Si2vi 2.536 (2) Si2—Pt2 2.536 (2)
Pt2—Pt3vi 2.8874 (5) Si2—Mo1xiv 2.558 (2)
Pt2—Pt3 2.8874 (5) Si2—Mo1iii 2.558 (2)
Pt2—Mo1vii 2.9255 (10) Si2—Pt1 2.579 (3)
Pt2—Mo1 2.9294 (10) Si2—Si1ii 2.711 (3)
Pt2—Mo1iii 2.9331 (10) Si2—Si1 2.711 (3)
Pt3—Si3 2.405 (2) Si3—Pt1vi 2.590 (2)
Pt3—Si3ii 2.405 (2) Si3—Pt1 2.590 (2)
Pt3—Si2 2.466 (3) SI3—Pt3 2.405 (2)
Pt3—Si3viii 2.506 (3) Si3—Pt3vi 2.405 (2)
Pt3—Si1v 2.699 (2) Si3—Pt1i 2.406 (3)
Pt3—Si1ix 2.699 (2) Si3—Pt3viii 2.506 (3)
Pt3—Pt1v 2.8281 (6) Si3—Si3xv 2.807 (5)
Pt3—Pt1 2.836 (1) Si3—Si3viii 2.807 (5)
Pt3—Pt2ii 2.8874 (5) Si4—Pt2vi 2.407 (2)
Pt3—Pt2 2.8874 (5) Si4—Pt2 2.407 (2)
Mo1—Si4 2.535 (2) Si4—Mo1vii 2.535 (2)
Mo1—Si4ii 2.537 (2) Si4—Mo1xvi 2.535 (2)
Mo1—Si4x 2.535 (2) Si4—Mo1vi 2.537 (2)
Mo1—Si4xi 2.535 (2) Si4—Mo1 2.536 (2)
Mo1—Si2xii 2.558 (2) Si4—Si4vii 3.012 (5)
Mo1—Si2v 2.558 (2) Si4—Si4xi 3.012 (5)
Si3i—Pt1—Si1 98.99 (9) Si4ii—Mo1—Si4 87.10 (10)
Si3i—Pt1—Si1ii 98.99 (9) Si4x—Mo1—Si2xii 134.65 (10)
Si1—Pt1—Si1ii 90.54 (10) Si4xi—Mo1—Si2xii 76.18 (8)
Si3i—Pt1—Si2 155.99 (10) Si4ii—Mo1—Si2xii 146.93 (10)
Si1—Pt1—Si2 65.04 (8) Si4—Mo1—Si2xii 84.07 (8)
Si1ii—Pt1—Si2 65.04 (8) Si4x—Mo1—Si2v 76.18 (8)
Si3i—Pt1—Si3 108.80 (8) Si4xi—Mo1—Si2v 134.65 (10)
Si1—Pt1—Si3 85.75 (8) Si4ii—Mo1—Si2v 84.07 (8)
Si1ii—Pt1—Si3 152.21 (10) Si4—Mo1—Si2v 146.93 (10)
Si2—Pt1—Si3 88.61 (8) Si2xii—Mo1—Si2v 86.18 (9)
Si3i—Pt1—Si3ii 108.80 (8) Si4x—Mo1—Si1v 135.16 (5)
Si1—Pt1—Si3ii 152.21 (10) Si4xi—Mo1—Si1v 135.16 (5)
Si1ii—Pt1—Si3ii 85.75 (8) Si4ii—Mo1—Si1v 84.07 (9)
Si2—Pt1—Si3ii 88.61 (8) Si4—Mo1—Si1v 84.08 (9)
Si3—Pt1—Si3ii 84.88 (9) Si2xii—Mo1—Si1v 63.37 (8)
Si3i—Pt1—Pt3iii 56.52 (7) Si2v—Mo1—Si1v 63.37 (8)
Si1—Pt1—Pt3iii 60.91 (7) Si4x—Mo1—Pt2xi 51.70 (6)
Si1ii—Pt1—Pt3iii 60.91 (7) Si4xi—Mo1—Pt2xi 51.70 (6)
Si2—Pt1—Pt3iii 99.47 (7) Si4ii—Mo1—Pt2xi 81.95 (7)
Si3—Pt1—Pt3iii 137.02 (5) Si4—Mo1—Pt2xi 81.94 (7)
Si3ii—Pt1—Pt3iii 137.02 (5) Si2xii—Mo1—Pt2xi 127.87 (6)
Si3i—Pt1—Pt3 150.09 (8) Si2v—Mo1—Pt2xi 127.87 (6)
Si1—Pt1—Pt3 101.93 (7) Si1v—Mo1—Pt2xi 160.67 (8)
Si1ii—Pt1—Pt3 101.93 (7) Si4x—Mo1—Pt2 124.35 (7)
Si2—Pt1—Pt3 53.91 (7) Si4xi—Mo1—Pt2 124.35 (7)
Si3—Pt1—Pt3 52.39 (6) Si4ii—Mo1—Pt2 51.64 (6)
Si3ii—Pt1—Pt3 52.39 (6) Si4—Mo1—Pt2 51.64 (6)
Pt3iii—Pt1—Pt3 153.38 (2) Si2xii—Mo1—Pt2 99.35 (7)
Si3i—Pt1—Pt1i 57.34 (5) Si2v—Mo1—Pt2 99.35 (7)
Si1—Pt1—Pt1i 93.62 (5) Si1v—Mo1—Pt2 50.71 (7)
Si1ii—Pt1—Pt1i 156.33 (7) Pt2xi—Mo1—Pt2 109.96 (3)
Si2—Pt1—Pt1i 137.15 (4) Si4x—Mo1—Pt2v 81.81 (7)
Si3—Pt1—Pt1i 51.45 (7) Si4xi—Mo1—Pt2v 81.81 (7)
Si3ii—Pt1—Pt1i 100.77 (6) Si4ii—Mo1—Pt2v 135.76 (5)
Pt3iii—Pt1—Pt1i 101.239 (19) Si4—Mo1—Pt2v 135.76 (5)
Pt3—Pt1—Pt1i 99.983 (19) Si2xii—Mo1—Pt2v 54.50 (6)
Si3i—Pt1—Pt1iv 57.34 (5) Si2v—Mo1—Pt2v 54.50 (6)
Si1—Pt1—Pt1iv 156.33 (7) Si1v—Mo1—Pt2v 89.47 (7)
Si1ii—Pt1—Pt1iv 93.62 (5) Pt2xi—Mo1—Pt2v 109.86 (3)
Si2—Pt1—Pt1iv 137.15 (4) Pt2—Mo1—Pt2v 140.18 (4)
Si3—Pt1—Pt1iv 100.77 (6) Pt2iii—Si1—Pt1 130.73 (7)
Si3ii—Pt1—Pt1iv 51.45 (7) Pt2iii—Si1—Pt1vi 130.73 (7)
Pt3iii—Pt1—Pt1iv 101.239 (19) Pt1—Si1—Pt1vi 90.54 (10)
Pt3—Pt1—Pt1iv 99.983 (19) Pt2iii—Si1—Mo1iii 71.76 (8)
Pt1i—Pt1—Pt1iv 73.760 (19) Pt1—Si1—Mo1iii 117.05 (9)
Si1v—Pt2—Si4ii 91.76 (9) Pt1vi—Si1—Mo1iii 117.05 (9)
Si1v—Pt2—Si4 91.76 (9) Pt2iii—Si1—Pt3iii 68.87 (7)
Si4ii—Pt2—Si4 93.12 (11) Pt1—Si1—Pt3iii 66.30 (4)
Si1v—Pt2—Si2 114.06 (8) Pt1vi—Si1—Pt3iii 121.20 (11)
Si4ii—Pt2—Si2 84.19 (8) Mo1iii—Si1—Pt3iii 121.65 (8)
Si4—Pt2—Si2 154.07 (10) Pt2iii—Si1—Pt3xiii 68.87 (7)
Si1v—Pt2—Si2vi 114.06 (8) Pt1—Si1—Pt3xiii 121.20 (11)
Si4ii—Pt2—Si2vi 154.07 (10) Pt1vi—Si1—Pt3xiii 66.30 (4)
Si4—Pt2—Si2vi 84.19 (8) Mo1iii—Si1—Pt3xiii 121.65 (8)
Si2—Pt2—Si2vi 87.10 (10) Pt3iii—Si1—Pt3xiii 80.71 (9)
Si1v—Pt2—Pt3vi 60.68 (5) Pt2iii—Si1—Si2 110.40 (11)
Si4ii—Pt2—Pt3vi 152.32 (7) Pt1—Si1—Si2 59.61 (7)
Si4—Pt2—Pt3vi 90.38 (6) Pt1vi—Si1—Si2 114.21 (13)
Si2—Pt2—Pt3vi 103.92 (6) Mo1iii—Si1—Si2 57.52 (8)
Si2vi—Pt2—Pt3vi 53.60 (6) Pt3iii—Si1—Si2 99.50 (4)
Si1v—Pt2—Pt3 60.68 (5) Pt3xiii—Si1—Si2 179.13 (14)
Si4ii—Pt2—Pt3 90.38 (6) Pt2iii—Si1—Si2vi 110.40 (11)
Si4—Pt2—Pt3 152.32 (7) Pt1—Si1—Si2vi 114.21 (13)
Si2—Pt2—Pt3 53.60 (6) Pt1vi—Si1—Si2vi 59.61 (7)
Si2vi—Pt2—Pt3 103.93 (6) Mo1iii—Si1—Si2vi 57.52 (8)
Pt3vi—Pt2—Pt3 74.490 (14) Pt3iii—Si1—Si2vi 179.13 (14)
Si1v—Pt2—Mo1vii 127.65 (7) Pt3xiii—Si1—Si2vi 99.50 (4)
Si4ii—Pt2—Mo1vii 55.76 (6) Si2—Si1—Si2vi 80.27 (12)
Si4—Pt2—Mo1vii 55.76 (6) Pt3—Si2—Pt2ii 70.50 (7)
Si2—Pt2—Mo1vii 103.02 (7) Pt3—Si2—Pt2 70.50 (7)
Si2vi—Pt2—Mo1vii 103.02 (7) Pt2ii—Si2—Pt2 87.10 (10)
Pt3vi—Pt2—Mo1vii 142.754 (7) Pt3—Si2—Mo1xiv 135.41 (6)
Pt3—Pt2—Mo1vii 142.754 (7) Pt2ii—Si2—Mo1xiv 70.30 (5)
Si1v—Pt2—Mo1 57.54 (7) Pt2—Si2—Mo1xiv 127.17 (12)
Si4ii—Pt2—Mo1 55.73 (7) Pt3—Si2—Mo1iii 135.41 (6)
Si4—Pt2—Mo1 55.73 (7) Pt2ii—Si2—Mo1iii 127.17 (12)
Si2—Pt2—Mo1 136.42 (5) Pt2—Si2—Mo1iii 70.30 (5)
Si2vi—Pt2—Mo1 136.42 (5) Mo1xiv—Si2—Mo1iii 86.17 (9)
Pt3vi—Pt2—Mo1 105.463 (19) Pt3—Si2—Pt1 68.37 (8)
Pt3—Pt2—Mo1 105.463 (19) Pt2ii—Si2—Pt1 118.36 (8)
Mo1vii—Pt2—Mo1 70.12 (2) Pt2—Si2—Pt1 118.36 (8)
Si1v—Pt2—Mo1iii 162.29 (8) Mo1xiv—Si2—Pt1 114.39 (9)
Si4ii—Pt2—Mo1iii 100.36 (8) Mo1iii—Si2—Pt1 114.39 (9)
Si4—Pt2—Mo1iii 100.36 (8) Pt3—Si2—Si1ii 105.40 (11)
Si2—Pt2—Mo1iii 55.20 (6) Pt2ii—Si2—Si1ii 96.07 (4)
Si2vi—Pt2—Mo1iii 55.20 (6) Pt2—Si2—Si1ii 173.71 (13)
Pt3vi—Pt2—Mo1iii 105.996 (19) Mo1xiv—Si2—Si1ii 59.11 (7)
Pt3—Pt2—Mo1iii 105.996 (19) Mo1iii—Si2—Si1ii 111.55 (13)
Mo1vii—Pt2—Mo1iii 70.06 (2) Pt1—Si2—Si1ii 55.35 (8)
Mo1—Pt2—Mo1iii 140.18 (4) Pt3—Si2—Si1 105.40 (11)
Si3—Pt3—Si3ii 93.20 (11) Pt2ii—Si2—Si1 173.71 (13)
Si3—Pt3—Si2 95.67 (9) Pt2—Si2—Si1 96.07 (4)
Si3ii—Pt3—Si2 95.67 (9) Mo1xiv—Si2—Si1 111.55 (13)
Si3—Pt3—Si3viii 69.67 (9) Mo1iii—Si2—Si1 59.11 (7)
Si3ii—Pt3—Si3viii 69.67 (9) Pt1—Si2—Si1 55.35 (8)
Si2—Pt3—Si3viii 157.89 (10) Si1ii—Si2—Si1 80.27 (12)
Si3—Pt3—Si1v 89.11 (7) Pt3—Si3—Pt3vi 93.20 (11)
Si3ii—Pt3—Si1v 157.71 (9) Pt3—Si3—Pt1i 132.47 (6)
Si2—Pt3—Si1v 106.16 (8) Pt3vi—Si3—Pt1i 132.47 (6)
Si3viii—Pt3—Si1v 90.52 (8) Pt3—Si3—Pt3viii 110.33 (9)
Si3—Pt3—Si1ix 157.72 (9) Pt3vi—Si3—Pt3viii 110.33 (9)
Si3ii—Pt3—Si1ix 89.11 (7) Pt1i—Si3—Pt3viii 70.27 (8)
Si2—Pt3—Si1ix 106.16 (8) Pt3—Si3—Pt1vi 128.58 (13)
Si3viii—Pt3—Si1ix 90.52 (8) Pt3vi—Si3—Pt1vi 69.08 (4)
Si1v—Pt3—Si1ix 80.71 (9) Pt1i—Si3—Pt1vi 71.20 (7)
Si3—Pt3—Pt1v 105.46 (7) Pt3viii—Si3—Pt1vi 121.08 (9)
Si3ii—Pt3—Pt1v 105.46 (7) Pt3—Si3—Pt1 69.08 (4)
Si2—Pt3—Pt1v 148.91 (8) Pt3vi—Si3—Pt1 128.58 (13)
Si3viii—Pt3—Pt1v 53.20 (7) Pt1i—Si3—Pt1 71.20 (7)
Si1v—Pt3—Pt1v 52.79 (6) Pt3viii—Si3—Pt1 121.08 (9)
Si1ix—Pt3—Pt1v 52.79 (6) Pt1vi—Si3—Pt1 84.88 (9)
Si3—Pt3—Pt1 58.53 (7) Pt3—Si3—Si3xv 110.98 (16)
Si3ii—Pt3—Pt1 58.53 (7) Pt3vi—Si3—Si3xv 56.86 (7)
Si2—Pt3—Pt1 57.71 (7) Pt1i—Si3—Si3xv 106.10 (14)
Si3viii—Pt3—Pt1 100.18 (7) Pt3viii—Si3—Si3xv 53.47 (10)
Si1v—Pt3—Pt1 138.45 (5) Pt1vi—Si3—Si3xv 98.92 (3)
Si1ix—Pt3—Pt1 138.45 (5) Pt1—Si3—Si3xv 174.46 (16)
Pt1v—Pt3—Pt1 153.38 (2) Pt3—Si3—Si3viii 56.86 (7)
Si3—Pt3—Pt2ii 151.56 (8) Pt3vi—Si3—Si3viii 110.98 (16)
Si3ii—Pt3—Pt2ii 89.99 (6) Pt1i—Si3—Si3viii 106.10 (14)
Si2—Pt3—Pt2ii 55.90 (5) Pt3viii—Si3—Si3viii 53.47 (10)
Si3viii—Pt3—Pt2ii 137.07 (3) Pt1vi—Si3—Si3viii 174.46 (16)
Si1v—Pt3—Pt2ii 98.46 (5) Pt1—Si3—Si3viii 98.92 (3)
Si1ix—Pt3—Pt2ii 50.46 (6) Si3xv—Si3—Si3viii 77.02 (16)
Pt1v—Pt3—Pt2ii 100.856 (15) Pt2—Si4—Pt2vi 93.11 (11)
Pt1—Pt3—Pt2ii 100.265 (15) Pt2—Si4—Mo1vii 72.54 (5)
Si3—Pt3—Pt2 89.99 (6) Pt2vi—Si4—Mo1vii 134.49 (14)
Si3ii—Pt3—Pt2 151.57 (8) Pt2—Si4—Mo1xvi 134.49 (14)
Si2—Pt3—Pt2 55.90 (5) Pt2vi—Si4—Mo1xvi 72.54 (5)
Si3viii—Pt3—Pt2 137.07 (3) Mo1vii—Si4—Mo1xvi 87.14 (10)
Si1v—Pt3—Pt2 50.46 (6) Pt2—Si4—Mo1vi 134.58 (13)
Si1ix—Pt3—Pt2 98.46 (5) Pt2vi—Si4—Mo1vi 72.63 (4)
Pt1v—Pt3—Pt2 100.855 (15) Mo1vii—Si4—Mo1vi 146.00 (13)
Pt1—Pt3—Pt2 100.265 (15) Mo1xvi—Si4—Mo1vi 83.07 (4)
Pt2ii—Pt3—Pt2 74.490 (14) Pt2—Si4—Mo1 72.63 (4)
Si4x—Mo1—Si4xi 87.14 (10) Pt2vi—Si4—Mo1 134.58 (13)
Si4x—Mo1—Si4ii 72.85 (5) Mo1vii—Si4—Mo1 83.07 (4)
Si4xi—Mo1—Si4ii 130.91 (7) Mo1xvi—Si4—Mo1 146.01 (13)
Si4x—Mo1—Si4 130.91 (6) Mo1vi—Si4—Mo1 87.10 (10)
Si4xi—Mo1—Si4 72.85 (5)

Symmetry codes: (i) −x+1, −y, −z+1; (ii) x, y+1, z; (iii) x+1, y, z; (iv) −x+1, −y+1, −z+1; (v) x−1, y, z; (vi) x, y−1, z; (vii) x+1/2, y, −z+3/2; (viii) −x, −y, −z+1; (ix) x−1, y+1, z; (x) x−1/2, y+1, −z+3/2; (xi) x−1/2, y, −z+3/2; (xii) x−1, y−1, z; (xiii) x+1, y−1, z; (xiv) x+1, y+1, z; (xv) −x, −y−1, −z+1; (xvi) x+1/2, y−1, −z+3/2.

Footnotes

Supplementary data and figures for this paper are available from the IUCr electronic archives (Reference: FI2101).

References

  1. Benarchid, Y., David, N., Fiorani, J.-M. & Vilasi, M. (2009). Thermochim. Acta, 494, 26–29.
  2. Bernard, F., Cabouro, G., Le Gallet, S., Chevalier, S., Gaffet, E. & Grin, Yu. (2010). Ceram. Trans. 209, 357–365.
  3. Brandenburg, K. (1999). DIAMOND Crystal Impact GbR, Bonn, Germany.
  4. Bruker (2004). APEX2, SAINT and SADABS Bruker AXS Inc., Madison, Wisconsin, USA.
  5. Cabouro, G., Chevalier, S., Gaffet, E., Grin, Yu. & Bernard, F. (2008). J. Alloys Compd, 465, 344–355.
  6. Cabouro, G., Chevalier, S., Gaffet, E., Vrel, E., Boudet, N. & Bernard, F. (2007). Acta Mater. 55, 6051–6063.
  7. Farrugia, L. J. (1997). J. Appl. Cryst. 30, 565.
  8. Fitzer, E. (1955). Molybdenum disilicide as high-temperature material, Plansee Proc., 2nd Seminar, Reutte/Tyrol (1955), pp. 56–79.
  9. Joubert, J.-M., Tokaychuk, Ya. & Cerny, R. (2010). J. Solid State Chem. 183, 173–179.
  10. Knittel, S., Mathieu, S. & Vilasi, M. (2010). Intermetallics, 18, 2267–2274.
  11. Littner, A. (2003). These de Doctorat, Université Henri Poincaré de Nancy, France.
  12. Pouchou, J. L. & Pichoir, F. (1984). Recherche Aérospatiale, 5, 349–351.
  13. Sheldrick, G. M. (2008). Acta Cryst. A64, 112–122. [DOI] [PubMed]

Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Supplementary Materials

Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536810054425/fi2101sup1.cif

e-67-00i20-sup1.cif (25.9KB, cif)

Structure factors: contains datablocks I. DOI: 10.1107/S1600536810054425/fi2101Isup2.hkl

e-67-00i20-Isup2.hkl (51.5KB, hkl)

Additional supplementary materials: crystallographic information; 3D view; checkCIF report


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