Abstract
The crystal structure of molybdenum triplatinum tetrasilicide, MoPt3Si4, determined previously from powder diffraction data [Joubert et al. (2010 ▶). J. Solid State Chem. 183, 173–179], has been redetermined using a single crystal synthesized from the elements by high-frequency melting. The redetermination provides more precise geometrical data and also anisotropic displacement parameters. The crystal structure can be considered to be derived from the PtSi structure type with an ordered substitution of Pt by Mo atoms, but leading to a very distorted Si network compared to the parent structure. Mo and Pt exhibit different coordination polyhedra. These are based on bicapped-square antiprisms, but with two additional vertices in cis positions for Mo, whereas they are in trans positions for Pt (as in PtSi). The coordination polyhedra for three of the Si atoms can be considered as highly deformed square antiprisms (as in PtSi), while the fourth Si atom has a bicapped trigonal–prismatic coordination geometry.
Related literature
For general background to molybdenum silicides, see: Littner (2003 ▶); Benarchid et al. (2009 ▶); Bernard et al. (2010 ▶); Cabouro et al. (2007 ▶, 2008 ▶); Fitzer (1955 ▶); Knittel et al. (2010 ▶). For the structure determination of the title compound from standard X-ray powder diffraction data, see: Joubert et al. (2010 ▶). For the PAP correction program, see: Pouchou & Pichoir (1984 ▶).
Experimental
Crystal data
MoPt3Si4
M r = 793.57
Orthorhombic,
a = 5.5121 (2) Å
b = 3.4951 (1) Å
c = 24.3078 (7) Å
V = 468.30 (3) Å3
Z = 4
Mo Kα radiation
μ = 92.80 mm−1
T = 297 K
0.12 × 0.03 × 0.03 mm
Data collection
Bruker APEXII QUAZAR CCD diffractometer
Absorption correction: multi-scan (SADABS; Bruker, 2004 ▶) T min = 0.031, T max = 0.174
9779 measured reflections
1060 independent reflections
955 reflections with I > 2σ(I)
R int = 0.040
Refinement
R[F 2 > 2σ(F 2)] = 0.029
wR(F 2) = 0.067
S = 1.41
1060 reflections
50 parameters
Δρmax = 2.16 e Å−3
Δρmin = −3.81 e Å−3
Data collection: APEX2 (Bruker, 2004 ▶); cell refinement: SAINT (Bruker, 2004 ▶); data reduction: SAINT; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: DIAMOND (Brandenburg, 1999 ▶) and ORTEP-3 (Farrugia, 1997 ▶); software used to prepare material for publication: SHELXL97.
Supplementary Material
Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536810054425/fi2101sup1.cif
Structure factors: contains datablocks I. DOI: 10.1107/S1600536810054425/fi2101Isup2.hkl
Additional supplementary materials: crystallographic information; 3D view; checkCIF report
Table 1. Selected bond lengths (Å).
| Pt1—Si3i | 2.406 (3) |
| Pt1—Pt1ii | 2.9119 (6) |
| Pt2—Si1iii | 2.387 (3) |
| Pt2—Mo1iv | 2.9331 (10) |
| Pt3—Si3 | 2.405 (2) |
| Pt3—Pt2 | 2.8874 (5) |
| Mo1—Si4 | 2.535 (2) |
| Mo1—Pt2iii | 2.9331 (10) |
| Si1—Pt2iv | 2.387 (3) |
| Si1—Si2 | 2.711 (3) |
| Si2—Pt3 | 2.466 (3) |
| Si2—Si1 | 2.711 (3) |
| Si3—Pt1v | 2.590 (2) |
| Si3—Si3vi | 2.807 (5) |
| Si4—Pt2v | 2.407 (2) |
| Si4—Si4vii | 3.012 (5) |
Symmetry codes: (i)
; (ii)
; (iii)
; (iv)
; (v)
; (vi)
; (vii)
.
Acknowledgments
We thank Dr Holger Ott (Bruker AXS GmbH, Karlsruhe, Germany) for the data collection and the ’Service Commun de Microanalyse’ (Faculté des Sciences et Techniques, Vandoeuvre les Nancy, France).
supplementary crystallographic information
Comment
Interest for studying the Mo—MP—Si (MP = Pt, Ru) system follows from the attractive properties of MoSi2 regarding high-temperature oxidation. But early in the past, the first studies performed by Fitzer (1955) mentioned the poor behaviour of this material under oxidizing atmosphere at moderate temperatures (300–600°C) due to a catastrophic degradation, the so-called "pest phenomenon". Consequently, one of the challenges for application of MoSi2 is to control the pest oxidation by adding alloying elements (Ru, Pt, B, Al, Ge, Y, Ti, Zr, Ta) (Littner, 2003, Benarchid et al. 2009) and/or by controlling the microstructure. Recently, the optimization of the microstructure led to fully densified materials showing dramatically improved oxidation performance of MoSi2 (Cabouro et al., 2007, Cabouro et al., 2008, Knittel et al., 2010), Bernard et al., 2010. In the course of our studies focused on the evaluation of the effect of elemental substitutions, we studied the isothermal section of the ternary phase diagram Mo—Pt—Si at 1423 K. Two new phases of composition MoPt2Si3 and MoPt3Si4 were identified (Littner, 2003), and MoPt3Si4 was indexed in the orthorhombic system: a = 5.5096 Å, b = 3.493 Å, c = 24.294 Å. The structure of MoPt3Si4 was recently published by Joubert et al. (2010), from powder X-ray diffraction data. It turned out that the MoPt3Si4 structure can be derived from PtSi by an ordered substitution of Pt by Mo. The atomic arrangement along the c axis leads to a fourfold superstructure, with c(MoPt3Si4) = 4 × c(PtSi). Our analysis based on single-crystal data confirms the previous results but yields more accurate atomic positions, approximately by one order of magnitude. Additionally, this also allows determination of anisotropic displacement parameters (Fig. 1). Fig. 2 shows the coordination polyhedra. The coordination number for each d metal is 10, for Si it is 8. Mo and Pt exhibit different coordination polyhedra. In both cases, these are based on bicapped-square antiprisms, but with two additional vertices in cis-positions for Mo whereas they are in trans-positions for Pt (as in PtSi). The coordination polyhedra for Si1, Si2 and Si3 atoms can be considered as highly deformed square antiprisms (as in PtSi), while Si4 has a bicapped trigonal prismatic coordination geometry. Shortest and longest interatomic distances for each coordination polyedra are reported in Table 1. The shortest distances found for Mo—Si and Pt—Si are 2.535 (2) Å and of 2.387 (3) Å respectively. These may be compared to the values given by Joubert et al. (2010), namely 2.463 Å and 2.355 Å.
Figure 3 also emphasizes that the corrugated ribbons formed by the silicon sub-network and expanded along the c axis are greatly distorted compared to the PtSi parent structure.
Experimental
Metal powders with nominal purities > 99.9 (Pt sponge 270 mesh - Engelhard - Clal, Si and Mo 325 mesh: Cerac) were mixed in different atomic ratios corresponding to alloys belonging to the MoSi2—Mo5Si3—PtSi domain. An ingot was prepared by high frequency melting, and stabilized in a thermodynamic equilibrium for 100 h at 1150°C under argon. Single crystals of Pt3MoSi4 were directly isolated from the crushed ingot. A part of the ingot was embedded in an epoxy resin, polished and microanalyzed by an electron probe (SX 50 CAMECA, - PAP correction program (Pouchou & Pichoir, 1984). The EPMA composition corresponds, within the accuracy of the measurement, to that obtained by the structural determination.
Refinement
Maximum residual electron density: highest peak 2.16 found at 0.75 Å from Pt2 and minimum residual electron density: highest hole -3.81 found at 1.22 Å from Si4
Figures
Fig. 1.
Plot of the asymmetric unit of MoPt3Si4. The displacement ellipsoids are drawn at the 75% probability level. Atoms are bonded for interatomic distances lower than 3.1 Å.
Fig. 2.
The unit cell and the coordination polyhedra of the atoms in the structure of MoPt3Si4. Si in blue, Pt in light grey, Mo in yellow.
Fig. 3.
Corrugated ribbons from Si atoms in the structure of PtSi and MoPt3Si4.
Crystal data
| MoPt3Si4 | Dx = 11.256 Mg m−3 |
| Mr = 793.57 | Melting point: 1503 K |
| Orthorhombic, Pnma | Mo Kα radiation, λ = 0.71073 Å |
| Hall symbol: -P 2ac 2n | Cell parameters from 4246 reflections |
| a = 5.5121 (2) Å | θ = 3.4–33.7° |
| b = 3.4951 (1) Å | µ = 92.80 mm−1 |
| c = 24.3078 (7) Å | T = 297 K |
| V = 468.30 (3) Å3 | Needle, metallic colourless |
| Z = 4 | 0.12 × 0.03 × 0.03 mm |
| F(000) = 1328 |
Data collection
| Bruker APEXII QUAZAR CCD diffractometer | 1060 independent reflections |
| Radiation source: ImuS | 955 reflections with I > 2σ(I) |
| graphite | Rint = 0.040 |
| ω scans | θmax = 33.7°, θmin = 1.7° |
| Absorption correction: multi-scan (SADABS; Bruker, 2004) | h = −8→8 |
| Tmin = 0.031, Tmax = 0.174 | k = −5→5 |
| 9779 measured reflections | l = −34→37 |
Refinement
| Refinement on F2 | Primary atom site location: structure-invariant direct methods |
| Least-squares matrix: full | Secondary atom site location: difference Fourier map |
| R[F2 > 2σ(F2)] = 0.029 | w = 1/[σ2(Fo2) + (0.0069P)2 + 14.4673P] where P = (Fo2 + 2Fc2)/3 |
| wR(F2) = 0.067 | (Δ/σ)max = 0.001 |
| S = 1.41 | Δρmax = 2.16 e Å−3 |
| 1060 reflections | Δρmin = −3.81 e Å−3 |
| 50 parameters | Extinction correction: SHELXL97 (Sheldrick, 2008), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4 |
| 0 restraints | Extinction coefficient: 0.00129 (7) |
Special details
| Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes. |
| Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger. |
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)
| x | y | z | Uiso*/Ueq | ||
| Pt1 | 0.50285 (7) | 0.2500 | 0.547907 (16) | 0.00783 (11) | |
| Pt2 | 0.00468 (7) | −0.2500 | 0.669289 (16) | 0.00688 (11) | |
| Pt3 | 0.00210 (7) | 0.2500 | 0.574730 (17) | 0.00783 (11) | |
| Mo1 | −0.49497 (15) | −0.2500 | 0.71035 (4) | 0.00562 (16) | |
| Si1 | 0.6616 (6) | −0.2500 | 0.60935 (12) | 0.0071 (5) | |
| Si2 | 0.3216 (6) | 0.2500 | 0.64573 (12) | 0.0072 (5) | |
| Si3 | 0.1790 (6) | −0.2500 | 0.51984 (12) | 0.0076 (5) | |
| Si4 | −0.1678 (6) | −0.7500 | 0.72502 (12) | 0.0071 (5) |
Atomic displacement parameters (Å2)
| U11 | U22 | U33 | U12 | U13 | U23 | |
| Pt1 | 0.00828 (19) | 0.00729 (18) | 0.00793 (19) | 0.000 | 0.00011 (13) | 0.000 |
| Pt2 | 0.00732 (18) | 0.00574 (16) | 0.00759 (19) | 0.000 | 0.00034 (13) | 0.000 |
| Pt3 | 0.00835 (18) | 0.00728 (17) | 0.00787 (18) | 0.000 | −0.00006 (13) | 0.000 |
| Mo1 | 0.0068 (3) | 0.0044 (3) | 0.0057 (3) | 0.000 | 0.0003 (3) | 0.000 |
| Si1 | 0.0086 (11) | 0.0063 (11) | 0.0064 (12) | 0.000 | −0.0006 (10) | 0.000 |
| Si2 | 0.0092 (12) | 0.0055 (12) | 0.0068 (12) | 0.000 | −0.0021 (10) | 0.000 |
| Si3 | 0.0090 (12) | 0.0063 (12) | 0.0075 (11) | 0.000 | 0.0004 (10) | 0.000 |
| Si4 | 0.0099 (12) | 0.0033 (11) | 0.0082 (12) | 0.000 | −0.0006 (10) | 0.000 |
Geometric parameters (Å, °)
| Pt1—Si3i | 2.406 (3) | Mo1—Si1v | 2.602 (3) |
| Pt1—Si1 | 2.460 (2) | Mo1—Pt2xi | 2.9256 (10) |
| Pt1—Si1ii | 2.460 (2) | Mo1—Pt2 | 2.929 (1) |
| Pt1—Si2 | 2.579 (3) | Mo1—Pt2v | 2.9331 (10) |
| Pt1—Si3 | 2.590 (2) | Si1—Pt2iii | 2.387 (3) |
| Pt1—Si3ii | 2.590 (2) | Si1—Pt1vi | 2.460 (2) |
| Pt1—Pt3iii | 2.8281 (6) | Si1—Pt1 | 2.460 (2) |
| Pt1—Pt3 | 2.8362 (6) | Si1—Mo1iii | 2.602 (3) |
| Pt1—Pt1i | 2.9119 (6) | Si1—Pt3iii | 2.699 (2) |
| Pt1—Pt1iv | 2.9119 (6) | Si1—Pt3xiii | 2.699 (2) |
| Pt2—Si1v | 2.387 (3) | Si1—Si2vi | 2.711 (3) |
| Pt2—Si4ii | 2.407 (2) | Si1—Si2 | 2.711 (3) |
| Pt2—Si4 | 2.407 (2) | Si2—Pt3 | 2.466 (3) |
| Pt2—Si2 | 2.536 (2) | Si2—Pt2ii | 2.536 (2) |
| Pt2—Si2vi | 2.536 (2) | Si2—Pt2 | 2.536 (2) |
| Pt2—Pt3vi | 2.8874 (5) | Si2—Mo1xiv | 2.558 (2) |
| Pt2—Pt3 | 2.8874 (5) | Si2—Mo1iii | 2.558 (2) |
| Pt2—Mo1vii | 2.9255 (10) | Si2—Pt1 | 2.579 (3) |
| Pt2—Mo1 | 2.9294 (10) | Si2—Si1ii | 2.711 (3) |
| Pt2—Mo1iii | 2.9331 (10) | Si2—Si1 | 2.711 (3) |
| Pt3—Si3 | 2.405 (2) | Si3—Pt1vi | 2.590 (2) |
| Pt3—Si3ii | 2.405 (2) | Si3—Pt1 | 2.590 (2) |
| Pt3—Si2 | 2.466 (3) | SI3—Pt3 | 2.405 (2) |
| Pt3—Si3viii | 2.506 (3) | Si3—Pt3vi | 2.405 (2) |
| Pt3—Si1v | 2.699 (2) | Si3—Pt1i | 2.406 (3) |
| Pt3—Si1ix | 2.699 (2) | Si3—Pt3viii | 2.506 (3) |
| Pt3—Pt1v | 2.8281 (6) | Si3—Si3xv | 2.807 (5) |
| Pt3—Pt1 | 2.836 (1) | Si3—Si3viii | 2.807 (5) |
| Pt3—Pt2ii | 2.8874 (5) | Si4—Pt2vi | 2.407 (2) |
| Pt3—Pt2 | 2.8874 (5) | Si4—Pt2 | 2.407 (2) |
| Mo1—Si4 | 2.535 (2) | Si4—Mo1vii | 2.535 (2) |
| Mo1—Si4ii | 2.537 (2) | Si4—Mo1xvi | 2.535 (2) |
| Mo1—Si4x | 2.535 (2) | Si4—Mo1vi | 2.537 (2) |
| Mo1—Si4xi | 2.535 (2) | Si4—Mo1 | 2.536 (2) |
| Mo1—Si2xii | 2.558 (2) | Si4—Si4vii | 3.012 (5) |
| Mo1—Si2v | 2.558 (2) | Si4—Si4xi | 3.012 (5) |
| Si3i—Pt1—Si1 | 98.99 (9) | Si4ii—Mo1—Si4 | 87.10 (10) |
| Si3i—Pt1—Si1ii | 98.99 (9) | Si4x—Mo1—Si2xii | 134.65 (10) |
| Si1—Pt1—Si1ii | 90.54 (10) | Si4xi—Mo1—Si2xii | 76.18 (8) |
| Si3i—Pt1—Si2 | 155.99 (10) | Si4ii—Mo1—Si2xii | 146.93 (10) |
| Si1—Pt1—Si2 | 65.04 (8) | Si4—Mo1—Si2xii | 84.07 (8) |
| Si1ii—Pt1—Si2 | 65.04 (8) | Si4x—Mo1—Si2v | 76.18 (8) |
| Si3i—Pt1—Si3 | 108.80 (8) | Si4xi—Mo1—Si2v | 134.65 (10) |
| Si1—Pt1—Si3 | 85.75 (8) | Si4ii—Mo1—Si2v | 84.07 (8) |
| Si1ii—Pt1—Si3 | 152.21 (10) | Si4—Mo1—Si2v | 146.93 (10) |
| Si2—Pt1—Si3 | 88.61 (8) | Si2xii—Mo1—Si2v | 86.18 (9) |
| Si3i—Pt1—Si3ii | 108.80 (8) | Si4x—Mo1—Si1v | 135.16 (5) |
| Si1—Pt1—Si3ii | 152.21 (10) | Si4xi—Mo1—Si1v | 135.16 (5) |
| Si1ii—Pt1—Si3ii | 85.75 (8) | Si4ii—Mo1—Si1v | 84.07 (9) |
| Si2—Pt1—Si3ii | 88.61 (8) | Si4—Mo1—Si1v | 84.08 (9) |
| Si3—Pt1—Si3ii | 84.88 (9) | Si2xii—Mo1—Si1v | 63.37 (8) |
| Si3i—Pt1—Pt3iii | 56.52 (7) | Si2v—Mo1—Si1v | 63.37 (8) |
| Si1—Pt1—Pt3iii | 60.91 (7) | Si4x—Mo1—Pt2xi | 51.70 (6) |
| Si1ii—Pt1—Pt3iii | 60.91 (7) | Si4xi—Mo1—Pt2xi | 51.70 (6) |
| Si2—Pt1—Pt3iii | 99.47 (7) | Si4ii—Mo1—Pt2xi | 81.95 (7) |
| Si3—Pt1—Pt3iii | 137.02 (5) | Si4—Mo1—Pt2xi | 81.94 (7) |
| Si3ii—Pt1—Pt3iii | 137.02 (5) | Si2xii—Mo1—Pt2xi | 127.87 (6) |
| Si3i—Pt1—Pt3 | 150.09 (8) | Si2v—Mo1—Pt2xi | 127.87 (6) |
| Si1—Pt1—Pt3 | 101.93 (7) | Si1v—Mo1—Pt2xi | 160.67 (8) |
| Si1ii—Pt1—Pt3 | 101.93 (7) | Si4x—Mo1—Pt2 | 124.35 (7) |
| Si2—Pt1—Pt3 | 53.91 (7) | Si4xi—Mo1—Pt2 | 124.35 (7) |
| Si3—Pt1—Pt3 | 52.39 (6) | Si4ii—Mo1—Pt2 | 51.64 (6) |
| Si3ii—Pt1—Pt3 | 52.39 (6) | Si4—Mo1—Pt2 | 51.64 (6) |
| Pt3iii—Pt1—Pt3 | 153.38 (2) | Si2xii—Mo1—Pt2 | 99.35 (7) |
| Si3i—Pt1—Pt1i | 57.34 (5) | Si2v—Mo1—Pt2 | 99.35 (7) |
| Si1—Pt1—Pt1i | 93.62 (5) | Si1v—Mo1—Pt2 | 50.71 (7) |
| Si1ii—Pt1—Pt1i | 156.33 (7) | Pt2xi—Mo1—Pt2 | 109.96 (3) |
| Si2—Pt1—Pt1i | 137.15 (4) | Si4x—Mo1—Pt2v | 81.81 (7) |
| Si3—Pt1—Pt1i | 51.45 (7) | Si4xi—Mo1—Pt2v | 81.81 (7) |
| Si3ii—Pt1—Pt1i | 100.77 (6) | Si4ii—Mo1—Pt2v | 135.76 (5) |
| Pt3iii—Pt1—Pt1i | 101.239 (19) | Si4—Mo1—Pt2v | 135.76 (5) |
| Pt3—Pt1—Pt1i | 99.983 (19) | Si2xii—Mo1—Pt2v | 54.50 (6) |
| Si3i—Pt1—Pt1iv | 57.34 (5) | Si2v—Mo1—Pt2v | 54.50 (6) |
| Si1—Pt1—Pt1iv | 156.33 (7) | Si1v—Mo1—Pt2v | 89.47 (7) |
| Si1ii—Pt1—Pt1iv | 93.62 (5) | Pt2xi—Mo1—Pt2v | 109.86 (3) |
| Si2—Pt1—Pt1iv | 137.15 (4) | Pt2—Mo1—Pt2v | 140.18 (4) |
| Si3—Pt1—Pt1iv | 100.77 (6) | Pt2iii—Si1—Pt1 | 130.73 (7) |
| Si3ii—Pt1—Pt1iv | 51.45 (7) | Pt2iii—Si1—Pt1vi | 130.73 (7) |
| Pt3iii—Pt1—Pt1iv | 101.239 (19) | Pt1—Si1—Pt1vi | 90.54 (10) |
| Pt3—Pt1—Pt1iv | 99.983 (19) | Pt2iii—Si1—Mo1iii | 71.76 (8) |
| Pt1i—Pt1—Pt1iv | 73.760 (19) | Pt1—Si1—Mo1iii | 117.05 (9) |
| Si1v—Pt2—Si4ii | 91.76 (9) | Pt1vi—Si1—Mo1iii | 117.05 (9) |
| Si1v—Pt2—Si4 | 91.76 (9) | Pt2iii—Si1—Pt3iii | 68.87 (7) |
| Si4ii—Pt2—Si4 | 93.12 (11) | Pt1—Si1—Pt3iii | 66.30 (4) |
| Si1v—Pt2—Si2 | 114.06 (8) | Pt1vi—Si1—Pt3iii | 121.20 (11) |
| Si4ii—Pt2—Si2 | 84.19 (8) | Mo1iii—Si1—Pt3iii | 121.65 (8) |
| Si4—Pt2—Si2 | 154.07 (10) | Pt2iii—Si1—Pt3xiii | 68.87 (7) |
| Si1v—Pt2—Si2vi | 114.06 (8) | Pt1—Si1—Pt3xiii | 121.20 (11) |
| Si4ii—Pt2—Si2vi | 154.07 (10) | Pt1vi—Si1—Pt3xiii | 66.30 (4) |
| Si4—Pt2—Si2vi | 84.19 (8) | Mo1iii—Si1—Pt3xiii | 121.65 (8) |
| Si2—Pt2—Si2vi | 87.10 (10) | Pt3iii—Si1—Pt3xiii | 80.71 (9) |
| Si1v—Pt2—Pt3vi | 60.68 (5) | Pt2iii—Si1—Si2 | 110.40 (11) |
| Si4ii—Pt2—Pt3vi | 152.32 (7) | Pt1—Si1—Si2 | 59.61 (7) |
| Si4—Pt2—Pt3vi | 90.38 (6) | Pt1vi—Si1—Si2 | 114.21 (13) |
| Si2—Pt2—Pt3vi | 103.92 (6) | Mo1iii—Si1—Si2 | 57.52 (8) |
| Si2vi—Pt2—Pt3vi | 53.60 (6) | Pt3iii—Si1—Si2 | 99.50 (4) |
| Si1v—Pt2—Pt3 | 60.68 (5) | Pt3xiii—Si1—Si2 | 179.13 (14) |
| Si4ii—Pt2—Pt3 | 90.38 (6) | Pt2iii—Si1—Si2vi | 110.40 (11) |
| Si4—Pt2—Pt3 | 152.32 (7) | Pt1—Si1—Si2vi | 114.21 (13) |
| Si2—Pt2—Pt3 | 53.60 (6) | Pt1vi—Si1—Si2vi | 59.61 (7) |
| Si2vi—Pt2—Pt3 | 103.93 (6) | Mo1iii—Si1—Si2vi | 57.52 (8) |
| Pt3vi—Pt2—Pt3 | 74.490 (14) | Pt3iii—Si1—Si2vi | 179.13 (14) |
| Si1v—Pt2—Mo1vii | 127.65 (7) | Pt3xiii—Si1—Si2vi | 99.50 (4) |
| Si4ii—Pt2—Mo1vii | 55.76 (6) | Si2—Si1—Si2vi | 80.27 (12) |
| Si4—Pt2—Mo1vii | 55.76 (6) | Pt3—Si2—Pt2ii | 70.50 (7) |
| Si2—Pt2—Mo1vii | 103.02 (7) | Pt3—Si2—Pt2 | 70.50 (7) |
| Si2vi—Pt2—Mo1vii | 103.02 (7) | Pt2ii—Si2—Pt2 | 87.10 (10) |
| Pt3vi—Pt2—Mo1vii | 142.754 (7) | Pt3—Si2—Mo1xiv | 135.41 (6) |
| Pt3—Pt2—Mo1vii | 142.754 (7) | Pt2ii—Si2—Mo1xiv | 70.30 (5) |
| Si1v—Pt2—Mo1 | 57.54 (7) | Pt2—Si2—Mo1xiv | 127.17 (12) |
| Si4ii—Pt2—Mo1 | 55.73 (7) | Pt3—Si2—Mo1iii | 135.41 (6) |
| Si4—Pt2—Mo1 | 55.73 (7) | Pt2ii—Si2—Mo1iii | 127.17 (12) |
| Si2—Pt2—Mo1 | 136.42 (5) | Pt2—Si2—Mo1iii | 70.30 (5) |
| Si2vi—Pt2—Mo1 | 136.42 (5) | Mo1xiv—Si2—Mo1iii | 86.17 (9) |
| Pt3vi—Pt2—Mo1 | 105.463 (19) | Pt3—Si2—Pt1 | 68.37 (8) |
| Pt3—Pt2—Mo1 | 105.463 (19) | Pt2ii—Si2—Pt1 | 118.36 (8) |
| Mo1vii—Pt2—Mo1 | 70.12 (2) | Pt2—Si2—Pt1 | 118.36 (8) |
| Si1v—Pt2—Mo1iii | 162.29 (8) | Mo1xiv—Si2—Pt1 | 114.39 (9) |
| Si4ii—Pt2—Mo1iii | 100.36 (8) | Mo1iii—Si2—Pt1 | 114.39 (9) |
| Si4—Pt2—Mo1iii | 100.36 (8) | Pt3—Si2—Si1ii | 105.40 (11) |
| Si2—Pt2—Mo1iii | 55.20 (6) | Pt2ii—Si2—Si1ii | 96.07 (4) |
| Si2vi—Pt2—Mo1iii | 55.20 (6) | Pt2—Si2—Si1ii | 173.71 (13) |
| Pt3vi—Pt2—Mo1iii | 105.996 (19) | Mo1xiv—Si2—Si1ii | 59.11 (7) |
| Pt3—Pt2—Mo1iii | 105.996 (19) | Mo1iii—Si2—Si1ii | 111.55 (13) |
| Mo1vii—Pt2—Mo1iii | 70.06 (2) | Pt1—Si2—Si1ii | 55.35 (8) |
| Mo1—Pt2—Mo1iii | 140.18 (4) | Pt3—Si2—Si1 | 105.40 (11) |
| Si3—Pt3—Si3ii | 93.20 (11) | Pt2ii—Si2—Si1 | 173.71 (13) |
| Si3—Pt3—Si2 | 95.67 (9) | Pt2—Si2—Si1 | 96.07 (4) |
| Si3ii—Pt3—Si2 | 95.67 (9) | Mo1xiv—Si2—Si1 | 111.55 (13) |
| Si3—Pt3—Si3viii | 69.67 (9) | Mo1iii—Si2—Si1 | 59.11 (7) |
| Si3ii—Pt3—Si3viii | 69.67 (9) | Pt1—Si2—Si1 | 55.35 (8) |
| Si2—Pt3—Si3viii | 157.89 (10) | Si1ii—Si2—Si1 | 80.27 (12) |
| Si3—Pt3—Si1v | 89.11 (7) | Pt3—Si3—Pt3vi | 93.20 (11) |
| Si3ii—Pt3—Si1v | 157.71 (9) | Pt3—Si3—Pt1i | 132.47 (6) |
| Si2—Pt3—Si1v | 106.16 (8) | Pt3vi—Si3—Pt1i | 132.47 (6) |
| Si3viii—Pt3—Si1v | 90.52 (8) | Pt3—Si3—Pt3viii | 110.33 (9) |
| Si3—Pt3—Si1ix | 157.72 (9) | Pt3vi—Si3—Pt3viii | 110.33 (9) |
| Si3ii—Pt3—Si1ix | 89.11 (7) | Pt1i—Si3—Pt3viii | 70.27 (8) |
| Si2—Pt3—Si1ix | 106.16 (8) | Pt3—Si3—Pt1vi | 128.58 (13) |
| Si3viii—Pt3—Si1ix | 90.52 (8) | Pt3vi—Si3—Pt1vi | 69.08 (4) |
| Si1v—Pt3—Si1ix | 80.71 (9) | Pt1i—Si3—Pt1vi | 71.20 (7) |
| Si3—Pt3—Pt1v | 105.46 (7) | Pt3viii—Si3—Pt1vi | 121.08 (9) |
| Si3ii—Pt3—Pt1v | 105.46 (7) | Pt3—Si3—Pt1 | 69.08 (4) |
| Si2—Pt3—Pt1v | 148.91 (8) | Pt3vi—Si3—Pt1 | 128.58 (13) |
| Si3viii—Pt3—Pt1v | 53.20 (7) | Pt1i—Si3—Pt1 | 71.20 (7) |
| Si1v—Pt3—Pt1v | 52.79 (6) | Pt3viii—Si3—Pt1 | 121.08 (9) |
| Si1ix—Pt3—Pt1v | 52.79 (6) | Pt1vi—Si3—Pt1 | 84.88 (9) |
| Si3—Pt3—Pt1 | 58.53 (7) | Pt3—Si3—Si3xv | 110.98 (16) |
| Si3ii—Pt3—Pt1 | 58.53 (7) | Pt3vi—Si3—Si3xv | 56.86 (7) |
| Si2—Pt3—Pt1 | 57.71 (7) | Pt1i—Si3—Si3xv | 106.10 (14) |
| Si3viii—Pt3—Pt1 | 100.18 (7) | Pt3viii—Si3—Si3xv | 53.47 (10) |
| Si1v—Pt3—Pt1 | 138.45 (5) | Pt1vi—Si3—Si3xv | 98.92 (3) |
| Si1ix—Pt3—Pt1 | 138.45 (5) | Pt1—Si3—Si3xv | 174.46 (16) |
| Pt1v—Pt3—Pt1 | 153.38 (2) | Pt3—Si3—Si3viii | 56.86 (7) |
| Si3—Pt3—Pt2ii | 151.56 (8) | Pt3vi—Si3—Si3viii | 110.98 (16) |
| Si3ii—Pt3—Pt2ii | 89.99 (6) | Pt1i—Si3—Si3viii | 106.10 (14) |
| Si2—Pt3—Pt2ii | 55.90 (5) | Pt3viii—Si3—Si3viii | 53.47 (10) |
| Si3viii—Pt3—Pt2ii | 137.07 (3) | Pt1vi—Si3—Si3viii | 174.46 (16) |
| Si1v—Pt3—Pt2ii | 98.46 (5) | Pt1—Si3—Si3viii | 98.92 (3) |
| Si1ix—Pt3—Pt2ii | 50.46 (6) | Si3xv—Si3—Si3viii | 77.02 (16) |
| Pt1v—Pt3—Pt2ii | 100.856 (15) | Pt2—Si4—Pt2vi | 93.11 (11) |
| Pt1—Pt3—Pt2ii | 100.265 (15) | Pt2—Si4—Mo1vii | 72.54 (5) |
| Si3—Pt3—Pt2 | 89.99 (6) | Pt2vi—Si4—Mo1vii | 134.49 (14) |
| Si3ii—Pt3—Pt2 | 151.57 (8) | Pt2—Si4—Mo1xvi | 134.49 (14) |
| Si2—Pt3—Pt2 | 55.90 (5) | Pt2vi—Si4—Mo1xvi | 72.54 (5) |
| Si3viii—Pt3—Pt2 | 137.07 (3) | Mo1vii—Si4—Mo1xvi | 87.14 (10) |
| Si1v—Pt3—Pt2 | 50.46 (6) | Pt2—Si4—Mo1vi | 134.58 (13) |
| Si1ix—Pt3—Pt2 | 98.46 (5) | Pt2vi—Si4—Mo1vi | 72.63 (4) |
| Pt1v—Pt3—Pt2 | 100.855 (15) | Mo1vii—Si4—Mo1vi | 146.00 (13) |
| Pt1—Pt3—Pt2 | 100.265 (15) | Mo1xvi—Si4—Mo1vi | 83.07 (4) |
| Pt2ii—Pt3—Pt2 | 74.490 (14) | Pt2—Si4—Mo1 | 72.63 (4) |
| Si4x—Mo1—Si4xi | 87.14 (10) | Pt2vi—Si4—Mo1 | 134.58 (13) |
| Si4x—Mo1—Si4ii | 72.85 (5) | Mo1vii—Si4—Mo1 | 83.07 (4) |
| Si4xi—Mo1—Si4ii | 130.91 (7) | Mo1xvi—Si4—Mo1 | 146.01 (13) |
| Si4x—Mo1—Si4 | 130.91 (6) | Mo1vi—Si4—Mo1 | 87.10 (10) |
| Si4xi—Mo1—Si4 | 72.85 (5) |
Symmetry codes: (i) −x+1, −y, −z+1; (ii) x, y+1, z; (iii) x+1, y, z; (iv) −x+1, −y+1, −z+1; (v) x−1, y, z; (vi) x, y−1, z; (vii) x+1/2, y, −z+3/2; (viii) −x, −y, −z+1; (ix) x−1, y+1, z; (x) x−1/2, y+1, −z+3/2; (xi) x−1/2, y, −z+3/2; (xii) x−1, y−1, z; (xiii) x+1, y−1, z; (xiv) x+1, y+1, z; (xv) −x, −y−1, −z+1; (xvi) x+1/2, y−1, −z+3/2.
Footnotes
Supplementary data and figures for this paper are available from the IUCr electronic archives (Reference: FI2101).
References
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Associated Data
This section collects any data citations, data availability statements, or supplementary materials included in this article.
Supplementary Materials
Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536810054425/fi2101sup1.cif
Structure factors: contains datablocks I. DOI: 10.1107/S1600536810054425/fi2101Isup2.hkl
Additional supplementary materials: crystallographic information; 3D view; checkCIF report



