The acknowledgment section should read as follows:
Acknowledgments
This work was supported by the National Institute of Health under Grant No. 1RO1EB008260-1 and the Defense Threat Reduction Agency under Grant No. HDTRA1-10-1-0037.
. 2011 May 12;98(19):199902. doi: 10.1063/1.3590274
Erratum: “Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors” [Appl. Phys. Lett. 97, 243501 (2010)]
Nitin K Rajan
1,a), David A Routenberg
2, Jin Chen
1, Mark A Reed
1,2,b)
Nitin K Rajan
1Department of Applied Physics, Yale University, New Haven Connecticut 06520, USA
Find articles by Nitin K Rajan
David A Routenberg
2Department of Electrical Engineering, Yale University, New Haven Connecticut 06520, USA
Find articles by David A Routenberg
Jin Chen
1Department of Applied Physics, Yale University, New Haven Connecticut 06520, USA
Find articles by Jin Chen
Mark A Reed
1Department of Applied Physics, Yale University, New Haven Connecticut 06520, USA
2Department of Electrical Engineering, Yale University, New Haven Connecticut 06520, USA
Find articles by Mark A Reed
1Department of Applied Physics, Yale University, New Haven Connecticut 06520, USA
2Department of Electrical Engineering, Yale University, New Haven Connecticut 06520, USA
a)
Electronic mail: nitin.rajan@yale.edu.
b)
Author to whom correspondence should be addressed. Electronic mail: mark.reed@yale.edu.
Received 2011 Apr 21; Accepted 2011 Apr 22; Issue date 2011 May 9.
Copyright © 2011 American Institute of Physics
PMCID: PMC3108399 PMID: 21647237
This corrects the article "Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors" in volume 97, 243501.