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. Author manuscript; available in PMC: 2012 Oct 5.
Published in final edited form as: Nanoscale. 2011 Aug 25;3(10):4060–4068. doi: 10.1039/c1nr10668f

Fig. 8.

Fig. 8

Photoluminscence spectra of porous silicon nanowires from Si wafer (0.02 Ω·cm) before amd after selenium treatment. (a) Porous silicon nanowires etched in presence of 0.3 M H2O2 for 30, 60, 90, 120 and 180 min after HF treatment for sample 1–5, respectively. (b) The deposition of photoluminscence spectrum of sample 5 in (a). (c) The Photoluminscence of porous silicon nanowires after selenium treatment. (d) The deposition of photoluminscence spectrum of porous silicon nanowires after 5 hr 700 °C Se-treatement in (c). (a and b adapted from ref 48. Copyright 2011 Springer. c and d adapted from ref. 49. Copyright 2011 Institute of Physics.)