Skip to main content
NCBI home page
Nanoscale Research Letters logoLink to Nanoscale Research Letters
. 2007 Feb 8;2(2):112–117. doi: 10.1007/s11671-007-9040-1

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

NW Strom 1, Zh M Wang 1, JH Lee 1,✉, ZY AbuWaar 1, Yu I Mazur 1, GJ Salamo 1
PMCID: PMC3245573

Abstract

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

Keywords: GaAs/GaAs droplet homo-epitaxy, InAs quantum dots, Molecular beam epitaxy, Self-assembly

Acknowledgments

The authors thank Dr. John Shultz for his strong support in the facility maintenance and the financial support of the NSF (through Grant DMR-0520550). The WSxM© image processing program was used in this paper (http://www.nanotec.es).

References

  1. S.-S. Li, G.-L. Long, F.-S. Bai, S.-L. Feng, H.-Z. Zheng, Pro. Natl. Acad. Sci. USA, 98(21), 11847 (2001); S. Chutia, M. Friesen, R. Joynt, Phys. Rev. B 73, 241304(R) (2006)
  2. Sugawara M, Mukai K, Nakata Y, Ishikawa H, Sakamoto A. Phys. Rev. B. 2000;61:7595. doi: 10.1103/PhysRevB.61.7595. COI number [1:CAS:528:DC%2BD3cXhvVSjt7c%3D] [DOI] [Google Scholar]
  3. Thompson RM, Stevenson RM, Shields AJ, Farrer I, Lobo CJ, Ritchie DA, Leadbeater ML, Pepper M. Phys. Rev. B. 2001;64:201302(R). [Google Scholar]
  4. Yuan Z, Kardynal BE, Mark Stevenson R, Shields AJ, Lobo CJ, Cooper K, Beattie NS, Ritchie DA, Pepper M. Science. 2002;295:102. doi: 10.1126/science.1066790. COI number [1:CAS:528:DC%2BD38XksVeruw%3D%3D] [DOI] [PubMed] [Google Scholar]
  5. Unitt DC, Bennett AJ, Atkinson P, Ritchie DA, Shields AJ. Phys. Rev B. 2005;72:33318. doi: 10.1103/PhysRevB.72.033318. [DOI] [Google Scholar]
  6. Kroutvar M, Ducommun Y, Finley JJ, Bichler M, Abstreiter G, Zrenner A. Appl. Phys. Lett. 2003;83:443. doi: 10.1063/1.1588368. COI number [1:CAS:528:DC%2BD3sXlsFKisb8%3D] [DOI] [Google Scholar]
  7. Shields AJ, O’Sullivan MP. Appl. 2000;76:3673. doi: 10.1063/1.126745. COI number [1:CAS:528:DC%2BD3cXktV2nt74%3D] [DOI] [Google Scholar]
  8. Pradhan N, Goorskey D, Thessing J, Peng X. J. 2005;127:17586. doi: 10.1021/ja055557z. COI number [1:CAS:528:DC%2BD2MXht1CkurvE] [DOI] [PubMed] [Google Scholar]
  9. Lee JH, Wang ZhM, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ. Nanotechnology. 2006;17:2275. doi: 10.1088/0957-4484/17/9/034. COI number [1:CAS:528:DC%2BD28Xmtl2nurk%3D] [DOI] [Google Scholar]
  10. Sun Z, Yang B. Nanoscale Res. 2006;1:46. doi: 10.1007/s11671-006-9008-6. [DOI] [Google Scholar]
  11. Wang ZhM, Lee JH, Liang BL, Black WT, Kunets VP, Mazur YI, Salamo GJ. Appl. 2006;88:233102. doi: 10.1063/1.2209157. [DOI] [Google Scholar]
  12. Kohmoto S, Nakamura H, Ishikawa T, Asakawa K. Appl. 1999;75:3488. doi: 10.1063/1.125364. COI number [1:CAS:528:DyaK1MXnsFyku7g%3D] [DOI] [Google Scholar]
  13. Song HZ, Usuki T, Ohshima T, Sakuma Y, Kawabe M, Okada Y, Takemoto K, Miyazawa T, Hirose S, Nakata Y, Takatsu M, Yokoyama N. Nanoscale Res. 2006;2:160. doi: 10.1007/s11671-006-9012-x. [DOI] [Google Scholar]
  14. K.P. Chang, S.L. Yang, D.S. Chuu, R.S. Hsiao, J.F. Chen, J. Appl. Phys. 97, 83511 (2005); E. Ribeiro, E. Muller, T. Heinzel, H. Auderset, K. Ensslin, G. Medeiros-Ribeiro, P.M. Petroff, Phys. Rev. B 58, 1506 (1998)
  15. H. Shin, J.B. Kim, Y.H. Yoo, W. Lee, E. Yoon, Y.M. Yu, J. Appl. Phys. 99, 023521 (2006); M. Henini, Nanoscale Res. Lett. 1, 32 (2006)
  16. N. Koguchi; K. Ishige, Jpn. J. Appl. Phys. 32(5A), 2052 (1993); T. Mano, T. Kuroda, S. Sanguinetti, T. Ochiai, T. Tateno, J. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, N. Koguchi, Nano Lett. 5, 425 (2005) [DOI] [PubMed]
  17. S.Y. Lehman, R. Alexana, R.P. Mirin, J.E. Bonevich, Mater. Res. Soc. Symp. – Proc., 737, 179 (2003); Y.H. Chen, X.L. Ye, Z.G. Wang, Nanoscale Res. Lett. 1, 79 (2006)
  18. Lundstrom T, Schoenfeld W, Lee H, Petroff PM. Science. 1999;286:2312. doi: 10.1126/science.286.5448.2312. COI number [1:CAS:528:DC%2BD3cXjslag] [DOI] [PubMed] [Google Scholar]
  19. Songmuang R, Kiravittaya S, Schmidt OG. Appl. 2003;82:892. doi: 10.1063/1.1569992. [DOI] [Google Scholar]
  20. Warburton RJ, Scha¨flein C, Haft D, Bickel F, Lorke A, Karrai K, Garcia JM, Schoenfeld W, Petroff PM. Nature. 2000;405:926. doi: 10.1038/35016030. COI number [1:CAS:528:DC%2BD3cXks1Wmu7s%3D] [DOI] [PubMed] [Google Scholar]
  21. Volmer M, Weber A. Z. 1926;119:277. COI number [1:CAS:528:DyaB28XhsFOmtQ%3D%3D] [Google Scholar]
  22. Wang ZM, Holmes K, Shultz JL, Salamo GJ. Phys. Stat. Sol. (a) 2005;202:R85. doi: 10.1002/pssa.200510031. COI number [1:CAS:528:DC%2BD2MXmtVegu7w%3D] [DOI] [Google Scholar]
  23. Gong Z, Niu ZC, Huang SS, Fang ZD, Sun BQ, Xia JB. Appl. 2005;87:93116. doi: 10.1063/1.2037193. [DOI] [Google Scholar]
  24. Djie HS, Gunawan O, Wang D-N, Ooi BS, Hwang JCM. Phys. Rev. B. 2006;73:155324. doi: 10.1103/PhysRevB.73.155324. [DOI] [Google Scholar]
  25. Patella F, Fanfoni M, Arciprete F, Nufris S, Placidi E, Balzarotti A, Patella F. et al. Appl. 2001;78:320. doi: 10.1063/1.1339850. COI number [1:CAS:528:DC%2BD3MXjt1ygtQ%3D%3D] [DOI] [Google Scholar]
  26. Godefroo S, Maes J, Hayne M, Moshchalkov VV, Henini M, Pulizzi F, Patanè A, Eaves L. J. 2005;96:2535. doi: 10.1063/1.1767972. [DOI] [Google Scholar]

Articles from Nanoscale Research Letters are provided here courtesy of Springer

RESOURCES