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Proceedings of the National Academy of Sciences of the United States of America logoLink to Proceedings of the National Academy of Sciences of the United States of America
. 1980 Apr;77(4):1749–1753. doi: 10.1073/pnas.77.4.1749

Geometrical model for the energy of semicoherent interphase interfaces

Roger C Ecob 1, Brian Ralph 1
PMCID: PMC348582  PMID: 16592796

Abstract

The basis for the considerations given in this paper is the O-lattice description of crystalline interfaces of Bollmann. In the development of his approach presented here, all possible interfacial planes between two crystal phases having a defined orientation relationship are considered. The energies of these interfaces are then computed in terms of the energies of the primary intrinsic dislocations. A number of modeling interactions are incorporated into this approach, and a better agreement with experimental data is thus obtained.

Keywords: O-lattice, orientation relationship, habit plane, primary intrinsic dislocations

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