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Acta Crystallographica Section E: Structure Reports Online logoLink to Acta Crystallographica Section E: Structure Reports Online
. 2012 Dec 22;69(Pt 1):o149. doi: 10.1107/S160053681205074X

1,1,3,3-Tetra-tert-butyl-2,2-diisopropyl-4,4-diphenyl­cyclo­tetra­silane

Takayoshi Kuribara a, Soichiro Kyushin a,*
PMCID: PMC3588281  PMID: 23476402

Abstract

The molecule in the structure of the title compound, C34H60Si4, lies on a twofold rotation axis that passes through the two Si atoms, resulting in a planar cyclo­tetra­silane ring. The dihedral angle between the cyclo­tetra­silane ring and the phenyl ring is 68.20 (5)°. The Si—Si bonds [2.4404 (8) and 2.4576 (8) Å] are longer than a standard Si—Si bond (2.34 Å) and the C—Si—C bond angle [97.07 (14)°] of the phenyl-substituted Si atom is smaller than the tetra­hedral bond angle (109.5°). These long bonds and small bond angle are favorable for reducing the steric hindrance among the bulky substituents.

Related literature  

For background to and applications of phenyl-substituted oligosilanes, see: Hinch & Krc (1957); Matsumoto & Tanaka (2008). For a related structure of a cyclo­tetra­silane without phenyl groups, see: Kyushin et al. (1995).graphic file with name e-69-0o149-scheme1.jpg

Experimental  

Crystal data  

  • C34H60Si4

  • M r = 581.18

  • Monoclinic, Inline graphic

  • a = 11.9477 (9) Å

  • b = 17.6585 (12) Å

  • c = 17.0422 (13) Å

  • β = 104.9394 (8)°

  • V = 3474.0 (4) Å3

  • Z = 4

  • Mo Kα radiation

  • μ = 0.19 mm−1

  • T = 173 K

  • 0.50 × 0.40 × 0.20 mm

Data collection  

  • Rigaku R-AXIS IV imaging plate diffractometer

  • Absorption correction: multi-scan (REQAB; Jacobson, 1998) T min = 0.910, T max = 0.963

  • 8534 measured reflections

  • 2917 independent reflections

  • 2899 reflections with I > 2σ(I)

  • R int = 0.025

Refinement  

  • R[F 2 > 2σ(F 2)] = 0.048

  • wR(F 2) = 0.095

  • S = 1.24

  • 2917 reflections

  • 181 parameters

  • H-atom parameters constrained

  • Δρmax = 0.24 e Å−3

  • Δρmin = −0.20 e Å−3

Data collection: CrystalClear (Rigaku, 2003); cell refinement: CrystalClear; data reduction: CrystalClear; program(s) used to solve structure: SIR2004 (Burla et al., 2005); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008); molecular graphics: ORTEP-3 (Farrugia, 2012); software used to prepare material for publication: SHELXL97 and Yadokari-XG 2009 (Kabuto et al., 2009).

Supplementary Material

Crystal structure: contains datablock(s) global, I. DOI: 10.1107/S160053681205074X/is5224sup1.cif

e-69-0o149-sup1.cif (27.4KB, cif)

Structure factors: contains datablock(s) I. DOI: 10.1107/S160053681205074X/is5224Isup2.hkl

e-69-0o149-Isup2.hkl (143.3KB, hkl)

Supplementary material file. DOI: 10.1107/S160053681205074X/is5224Isup3.cml

Additional supplementary materials: crystallographic information; 3D view; checkCIF report

Acknowledgments

This work was supported in part by Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan, and the Japan Society for the Promotion of Science. This work was also supported by the Element Innovation Project of Gunma University.

supplementary crystallographic information

Comment

Birefringent materials have a wide range of optical applications. Single crystals of calcium carbonate and barium borate have been well known as inorganic birefringent materials. Organic single crystals such as urea have also been known to show birefringence. Since birefringence is related to crystal structures, studies on molecular structures and packing in a crystal are important. In 1957, birefringence of tetrakis(4-phenylphenyl)silane was reported (Hinch & Krc, 1957). Recently, birefringence of single crystals of phenyl-substituted linear oligosilanes and their application to polarizers have been reported (Matsumoto & Tanaka, 2008). From these results, crystals of phenyl-substituted silicon compounds seem interesting as potential optical materials. We report herein the synthesis and X-ray crystal analysis of a phenyl-substituted cyclotetrasilane.

The coupling of 1,3-dibromo-1,1,3,3-tetra-tert-butyl-2,2-diphenyltrisilane and dichlorodiisopropylsilane with lithium in tetrahydrofuran (THF) gave 1,1,3,3-tetra-tert-butyl-2,2-diisopropyl-4,4-diphenylcyclotetrasilane (1) in 21% yield (Fig. 1). The molecular structure of 1 is shown in Fig. 2. Compound 1 has the crystallographic C2 symmetry, and therefore the cyclotetrasilane ring has a completely planar structure. The silicon–silicon bonds [2.4404 (8) and 2.4576 (8) Å] are longer than the standard silicon–silicon bond (2.34 Å). The C1—Si1—C1i bond angle [97.07 (14)°] is smaller than the tetrahedral bond angle (109.5°), while the C7—Si2—C11 [111.39 (10)°] and C15—Si3—C15i [106.97 (15)°] bond angles are within normal values. The long silicon–silicon bonds and the small carbon–silicon–carbon bond angle are favorable for reducing the steric hindrance among bulky substituents.

Packing diagram of 1 is shown in Fig. 3. Four molecules are present in a unit cell. All cyclotetrasilane rings are oriented toward the same direction with the line through the Si1 and Si3 atoms parallel to the b axis. There is no intermolecular π–π interaction among phenyl groups.

Experimental

A mixture of 1,3-dibromo-1,1,3,3-tetra-tert-butyl-2,2-diphenyltrisilane (5.00 g, 7.98 mmol), dichlorodiisopropylsilane (2.24 g, 12.1 mmol) and lithium (0.28 g, 40 mmol) in THF (50 ml) was stirred at room temperature for 1 day. The solvent was removed under reduced pressure. The residue was dissolved in hexane and passed through a short column of silica gel. After the silica gel was washed with hexane, the eluent was changed to diethyl ether. The diethyl ether eluate was evaporated. Recrystallization of the residue from methanol–THF (ca 1:1) gave 1 (0.956 g, 21%) as colorless crystals. Single crystals were obtained from methanol–THF (ca 1:1) by slow evaporation.

M.p.: 210–211 °C. 1H NMR (400 MHz, CDCl3): δ 1.21 (s, 36H), 1.46 (d, 12H, J = 7.4 Hz), 1.94 (sept, 2H, J = 7.4 Hz), 7.14–7.18 (m, 6H), 7.68–7.70 (m, 4H). 13C NMR (76 MHz, CDCl3): δ 17.5, 24.7, 25.4, 32.8, 127.1, 127.4, 138.6, 142.1. 29Si NMR (119 MHz, CDCl3): δ -6.2, 14.0, 20.4. IR (KBr): 3050, 2950, 2920, 2850, 1470, 1420, 1390, 1360, 810, 730, 700 cm-1. MS (EI, 70 eV): m/z 580 (M+, 17), 360 (100).

Refinement

All hydrogen atoms were generated at calculated positions and refined as riding atoms, with C—H = 0.95 (phenyl), 0.98 (methyl) or 1.00 (methine) Å, and with Uiso(H) = 1.2Ueq(phenyl C), 1.5Ueq(methyl C) or 1.2Ueq(methine C).

Figures

Fig. 1.

Fig. 1.

Synthesis of 1.

Fig. 2.

Fig. 2.

The molecular structure of 1, showing 50% probability displacement ellipsoids. [Symmetry code: (i) –x, y, –z + 3/2.]

Fig. 3.

Fig. 3.

Packing diagram of 1, showing 50% probability displacement ellipsoids.

Crystal data

C34H60Si4 F(000) = 1280
Mr = 581.18 Dx = 1.111 Mg m3
Monoclinic, C2/c Melting point = 483–484 K
Hall symbol: -C 2yc Mo Kα radiation, λ = 0.71073 Å
a = 11.9477 (9) Å Cell parameters from 7676 reflections
b = 17.6585 (12) Å θ = 1.2–28.3°
c = 17.0422 (13) Å µ = 0.19 mm1
β = 104.9394 (8)° T = 173 K
V = 3474.0 (4) Å3 Prism, colourless
Z = 4 0.50 × 0.40 × 0.20 mm

Data collection

Rigaku R-AXISIV imaging plate diffractometer 2917 independent reflections
Radiation source: rotating anode 2899 reflections with I > 2σ(I)
Graphite monochromator Rint = 0.025
Detector resolution: 10.00 pixels mm-1 θmax = 25.0°, θmin = 2.1°
ω scans h = −14→14
Absorption correction: multi-scan (REQAB; Jacobson, 1998) k = −18→20
Tmin = 0.910, Tmax = 0.963 l = −20→20
8534 measured reflections

Refinement

Refinement on F2 Primary atom site location: structure-invariant direct methods
Least-squares matrix: full Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.048 Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.095 H-atom parameters constrained
S = 1.24 w = 1/[σ2(Fo2) + (0.0127P)2 + 7.2943P] where P = (Fo2 + 2Fc2)/3
2917 reflections (Δ/σ)max = 0.001
181 parameters Δρmax = 0.24 e Å3
0 restraints Δρmin = −0.20 e Å3

Special details

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > 2σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)

x y z Uiso*/Ueq
Si1 0.0000 0.32355 (5) 0.7500 0.01350 (19)
Si2 0.09403 (5) 0.22594 (3) 0.68813 (3) 0.01324 (15)
Si3 0.0000 0.12695 (5) 0.7500 0.01475 (19)
C1 −0.07934 (19) 0.39557 (13) 0.67052 (13) 0.0179 (5)
C2 −0.0078 (2) 0.45046 (14) 0.64962 (15) 0.0269 (6)
H1 0.0725 0.4498 0.6763 0.032*
C3 −0.0487 (2) 0.50564 (15) 0.59179 (17) 0.0330 (6)
H2 0.0031 0.5416 0.5791 0.040*
C4 −0.1657 (2) 0.50818 (15) 0.55245 (15) 0.0307 (6)
H3 −0.1947 0.5455 0.5122 0.037*
C5 −0.2392 (2) 0.45599 (15) 0.57252 (16) 0.0313 (6)
H4 −0.3196 0.4576 0.5462 0.038*
C6 −0.1968 (2) 0.40088 (14) 0.63102 (15) 0.0262 (5)
H5 −0.2494 0.3659 0.6444 0.031*
C7 0.03683 (19) 0.22973 (13) 0.56985 (13) 0.0191 (5)
C8 −0.0961 (2) 0.23931 (15) 0.54491 (14) 0.0259 (5)
H6 −0.1243 0.2356 0.4857 0.039*
H7 −0.1165 0.2890 0.5629 0.039*
H8 −0.1318 0.1994 0.5703 0.039*
C9 0.0639 (2) 0.15671 (16) 0.52878 (15) 0.0331 (6)
H9 0.0373 0.1622 0.4697 0.050*
H10 0.0240 0.1139 0.5462 0.050*
H11 0.1476 0.1476 0.5444 0.050*
C10 0.0887 (2) 0.29704 (15) 0.53389 (15) 0.0307 (6)
H12 0.1716 0.2884 0.5404 0.046*
H13 0.0779 0.3436 0.5623 0.046*
H14 0.0497 0.3020 0.4760 0.046*
C11 0.26218 (18) 0.23095 (14) 0.72206 (14) 0.0204 (5)
C12 0.3017 (2) 0.21501 (14) 0.81400 (14) 0.0253 (5)
H15 0.2866 0.1618 0.8242 0.038*
H16 0.2587 0.2477 0.8425 0.038*
H17 0.3848 0.2254 0.8338 0.038*
C13 0.3052 (2) 0.31047 (16) 0.70706 (17) 0.0347 (6)
H18 0.3880 0.3148 0.7340 0.052*
H19 0.2621 0.3486 0.7291 0.052*
H20 0.2929 0.3186 0.6486 0.052*
C14 0.3208 (2) 0.17278 (18) 0.67839 (17) 0.0379 (7)
H21 0.3064 0.1865 0.6209 0.057*
H22 0.2889 0.1223 0.6830 0.057*
H23 0.4044 0.1724 0.7034 0.057*
C15 0.0992 (2) 0.06194 (13) 0.82929 (15) 0.0241 (5)
H24 0.1364 0.0948 0.8766 0.029*
C16 0.0306 (3) 0.00034 (16) 0.86183 (17) 0.0387 (7)
H25 0.0068 −0.0395 0.8209 0.058*
H26 −0.0382 0.0231 0.8734 0.058*
H27 0.0798 −0.0215 0.9118 0.058*
C17 0.1985 (2) 0.02186 (16) 0.80303 (19) 0.0387 (7)
H28 0.2509 −0.0020 0.8504 0.058*
H29 0.2414 0.0591 0.7796 0.058*
H30 0.1662 −0.0170 0.7624 0.058*

Atomic displacement parameters (Å2)

U11 U22 U33 U12 U13 U23
Si1 0.0139 (4) 0.0121 (4) 0.0151 (4) 0.000 0.0047 (3) 0.000
Si2 0.0127 (3) 0.0149 (3) 0.0133 (3) −0.0005 (2) 0.0055 (2) −0.0008 (2)
Si3 0.0165 (4) 0.0118 (4) 0.0169 (4) 0.000 0.0061 (4) 0.000
C1 0.0219 (11) 0.0167 (12) 0.0162 (11) 0.0022 (9) 0.0072 (10) −0.0007 (9)
C2 0.0260 (12) 0.0273 (14) 0.0279 (14) 0.0013 (10) 0.0081 (11) 0.0074 (10)
C3 0.0415 (15) 0.0258 (14) 0.0367 (15) −0.0008 (11) 0.0189 (13) 0.0106 (11)
C4 0.0465 (16) 0.0230 (14) 0.0230 (13) 0.0109 (11) 0.0101 (12) 0.0100 (10)
C5 0.0273 (13) 0.0336 (15) 0.0298 (14) 0.0095 (11) 0.0012 (12) 0.0062 (11)
C6 0.0227 (12) 0.0271 (14) 0.0276 (13) 0.0002 (10) 0.0044 (11) 0.0060 (10)
C7 0.0236 (12) 0.0209 (12) 0.0143 (11) 0.0012 (9) 0.0078 (10) −0.0023 (9)
C8 0.0242 (12) 0.0346 (15) 0.0179 (12) 0.0005 (10) 0.0033 (10) 0.0002 (10)
C9 0.0410 (15) 0.0343 (16) 0.0232 (13) 0.0076 (12) 0.0070 (12) −0.0095 (11)
C10 0.0375 (14) 0.0359 (16) 0.0219 (13) −0.0041 (11) 0.0135 (12) 0.0068 (11)
C11 0.0144 (10) 0.0271 (13) 0.0210 (12) −0.0006 (9) 0.0068 (10) −0.0040 (9)
C12 0.0192 (11) 0.0299 (14) 0.0240 (13) 0.0013 (10) 0.0005 (10) −0.0042 (10)
C13 0.0288 (13) 0.0431 (17) 0.0327 (15) −0.0176 (12) 0.0086 (12) 0.0011 (12)
C14 0.0210 (13) 0.058 (2) 0.0355 (16) 0.0079 (12) 0.0092 (12) −0.0157 (14)
C15 0.0289 (12) 0.0170 (12) 0.0243 (13) 0.0059 (10) 0.0029 (11) 0.0024 (9)
C16 0.0570 (18) 0.0254 (15) 0.0335 (15) −0.0005 (13) 0.0113 (14) 0.0090 (12)
C17 0.0319 (14) 0.0246 (15) 0.058 (2) 0.0119 (11) 0.0084 (14) 0.0004 (13)

Geometric parameters (Å, º)

Si1—C1 1.921 (2) C9—H11 0.9800
Si1—Si2 2.4404 (8) C10—H12 0.9800
Si2—C11 1.944 (2) C10—H13 0.9800
Si2—C7 1.956 (2) C10—H14 0.9800
Si2—Si3 2.4576 (8) C11—C14 1.539 (3)
Si3—C15 1.929 (2) C11—C13 1.539 (3)
C1—C6 1.394 (3) C11—C12 1.541 (3)
C1—C2 1.398 (3) C12—H15 0.9800
C2—C3 1.382 (3) C12—H16 0.9800
C2—H1 0.9500 C12—H17 0.9800
C3—C4 1.386 (4) C13—H18 0.9800
C3—H2 0.9500 C13—H19 0.9800
C4—C5 1.376 (4) C13—H20 0.9800
C4—H3 0.9500 C14—H21 0.9800
C5—C6 1.392 (3) C14—H22 0.9800
C5—H4 0.9500 C14—H23 0.9800
C6—H5 0.9500 C15—C17 1.543 (3)
C7—C10 1.539 (3) C15—C16 1.548 (3)
C7—C9 1.541 (3) C15—H24 1.0000
C7—C8 1.544 (3) C16—H25 0.9800
C8—H6 0.9800 C16—H26 0.9800
C8—H7 0.9800 C16—H27 0.9800
C8—H8 0.9800 C17—H28 0.9800
C9—H9 0.9800 C17—H29 0.9800
C9—H10 0.9800 C17—H30 0.9800
C1i—Si1—C1 97.07 (14) H10—C9—H11 109.5
C1i—Si1—Si2 125.03 (7) C7—C10—H12 109.5
C1—Si1—Si2 111.19 (6) C7—C10—H13 109.5
Si2i—Si1—Si2 90.13 (4) H12—C10—H13 109.5
C11—Si2—C7 111.39 (10) C7—C10—H14 109.5
C11—Si2—Si1 113.26 (7) H12—C10—H14 109.5
C7—Si2—Si1 110.10 (7) H13—C10—H14 109.5
C11—Si2—Si3 117.16 (8) C14—C11—C13 108.4 (2)
C7—Si2—Si3 112.93 (7) C14—C11—C12 108.2 (2)
Si1—Si2—Si3 90.27 (3) C13—C11—C12 107.92 (19)
C15i—Si3—C15 106.97 (15) C14—C11—Si2 112.95 (16)
C15i—Si3—Si2 112.89 (7) C13—C11—Si2 110.84 (17)
C15—Si3—Si2 117.23 (7) C12—C11—Si2 108.42 (14)
Si2i—Si3—Si2 89.33 (4) C11—C12—H15 109.5
C6—C1—C2 115.8 (2) C11—C12—H16 109.5
C6—C1—Si1 129.59 (18) H15—C12—H16 109.5
C2—C1—Si1 114.57 (17) C11—C12—H17 109.5
C3—C2—C1 122.9 (2) H15—C12—H17 109.5
C3—C2—H1 118.6 H16—C12—H17 109.5
C1—C2—H1 118.6 C11—C13—H18 109.5
C2—C3—C4 119.7 (2) C11—C13—H19 109.5
C2—C3—H2 120.2 H18—C13—H19 109.5
C4—C3—H2 120.2 C11—C13—H20 109.5
C5—C4—C3 119.1 (2) H18—C13—H20 109.5
C5—C4—H3 120.4 H19—C13—H20 109.5
C3—C4—H3 120.4 C11—C14—H21 109.5
C4—C5—C6 120.6 (2) C11—C14—H22 109.5
C4—C5—H4 119.7 H21—C14—H22 109.5
C6—C5—H4 119.7 C11—C14—H23 109.5
C5—C6—C1 121.9 (2) H21—C14—H23 109.5
C5—C6—H5 119.1 H22—C14—H23 109.5
C1—C6—H5 119.1 C17—C15—C16 107.4 (2)
C10—C7—C9 108.18 (19) C17—C15—Si3 116.68 (18)
C10—C7—C8 107.3 (2) C16—C15—Si3 112.50 (17)
C9—C7—C8 106.7 (2) C17—C15—H24 106.6
C10—C7—Si2 111.55 (16) C16—C15—H24 106.6
C9—C7—Si2 112.41 (16) Si3—C15—H24 106.6
C8—C7—Si2 110.42 (14) C15—C16—H25 109.5
C7—C8—H6 109.5 C15—C16—H26 109.5
C7—C8—H7 109.5 H25—C16—H26 109.5
H6—C8—H7 109.5 C15—C16—H27 109.5
C7—C8—H8 109.5 H25—C16—H27 109.5
H6—C8—H8 109.5 H26—C16—H27 109.5
H7—C8—H8 109.5 C15—C17—H28 109.5
C7—C9—H9 109.5 C15—C17—H29 109.5
C7—C9—H10 109.5 H28—C17—H29 109.5
H9—C9—H10 109.5 C15—C17—H30 109.5
C7—C9—H11 109.5 H28—C17—H30 109.5
H9—C9—H11 109.5 H29—C17—H30 109.5
C1i—Si1—Si2—C11 −3.63 (12) C3—C4—C5—C6 −0.6 (4)
C1—Si1—Si2—C11 112.02 (11) C4—C5—C6—C1 −0.9 (4)
Si2i—Si1—Si2—C11 −119.92 (8) C2—C1—C6—C5 2.0 (4)
C1i—Si1—Si2—C7 −129.08 (11) Si1—C1—C6—C5 −177.9 (2)
C1—Si1—Si2—C7 −13.43 (11) C11—Si2—C7—C10 −51.24 (19)
Si2i—Si1—Si2—C7 114.63 (8) Si1—Si2—C7—C10 75.27 (16)
C1i—Si1—Si2—Si3 116.29 (8) Si3—Si2—C7—C10 174.50 (14)
C1—Si1—Si2—Si3 −128.06 (7) C11—Si2—C7—C9 70.49 (19)
Si2i—Si1—Si2—Si3 0.0 Si1—Si2—C7—C9 −163.01 (15)
C11—Si2—Si3—C15i −124.05 (11) Si3—Si2—C7—C9 −63.78 (18)
C7—Si2—Si3—C15i 7.41 (11) C11—Si2—C7—C8 −170.44 (16)
Si1—Si2—Si3—C15i 119.45 (8) Si1—Si2—C7—C8 −43.93 (18)
C11—Si2—Si3—C15 0.95 (12) Si3—Si2—C7—C8 55.30 (18)
C7—Si2—Si3—C15 132.41 (11) C7—Si2—C11—C14 −51.3 (2)
Si1—Si2—Si3—C15 −115.55 (9) Si1—Si2—C11—C14 −176.05 (16)
C11—Si2—Si3—Si2i 116.50 (8) Si3—Si2—C11—C14 80.87 (19)
C7—Si2—Si3—Si2i −112.04 (8) C7—Si2—C11—C13 70.59 (18)
Si1—Si2—Si3—Si2i 0.0 Si1—Si2—C11—C13 −54.17 (17)
C1i—Si1—C1—C6 −127.9 (2) Si3—Si2—C11—C13 −157.25 (14)
Si2i—Si1—C1—C6 −5.8 (3) C7—Si2—C11—C12 −171.14 (15)
Si2—Si1—C1—C6 100.2 (2) Si1—Si2—C11—C12 64.11 (17)
C1i—Si1—C1—C2 52.17 (16) Si3—Si2—C11—C12 −38.97 (18)
Si2i—Si1—C1—C2 174.29 (14) C15i—Si3—C15—C17 74.54 (19)
Si2—Si1—C1—C2 −79.77 (18) Si2i—Si3—C15—C17 −155.06 (17)
C6—C1—C2—C3 −1.9 (4) Si2—Si3—C15—C17 −53.4 (2)
Si1—C1—C2—C3 178.1 (2) C15i—Si3—C15—C16 −50.24 (16)
C1—C2—C3—C4 0.5 (4) Si2i—Si3—C15—C16 80.16 (18)
C2—C3—C4—C5 0.7 (4) Si2—Si3—C15—C16 −178.14 (15)

Symmetry code: (i) −x, y, −z+3/2.

Footnotes

Supplementary data and figures for this paper are available from the IUCr electronic archives (Reference: IS5224).

References

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Associated Data

This section collects any data citations, data availability statements, or supplementary materials included in this article.

Supplementary Materials

Crystal structure: contains datablock(s) global, I. DOI: 10.1107/S160053681205074X/is5224sup1.cif

e-69-0o149-sup1.cif (27.4KB, cif)

Structure factors: contains datablock(s) I. DOI: 10.1107/S160053681205074X/is5224Isup2.hkl

e-69-0o149-Isup2.hkl (143.3KB, hkl)

Supplementary material file. DOI: 10.1107/S160053681205074X/is5224Isup3.cml

Additional supplementary materials: crystallographic information; 3D view; checkCIF report


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