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. Author manuscript; available in PMC: 2013 Jun 9.
Published in final edited form as: Langmuir. 2008 May 30;24(13):6837–6844. doi: 10.1021/la800231e

Figure 3.

Figure 3

ToF-SIMS analysis of assembly and desorption of PEG silane from ITO substrates. (A) A mass spectrum of negative secondary ions emitted from bare ITO surface. The inset shows a prominent InO− peak. (B) A mass spectrum of ITO surface after modification with PEG silane. The inset underscores almost complete disappearance of the InO− peak characteristic of the ITO substrate. This fact points to the modification of the substrate. (C) A mass spectrum of PEG silane-modified ITO substrate after application of reductive potential shows reappearance of ITO-specific InO− peak and points to the removal of the organic silane layer. Importantly, emission yield of ITO substrate after PEG removal is similar to the emission yield of bare ITO. This highlights complete removal of the PEG silane layer upon electrochemical stimulation.