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. Author manuscript; available in PMC: 2016 Apr 1.
Published in final edited form as: Microcirculation. 2015 Apr;22(3):183–196. doi: 10.1111/micc.12190

Figure 3.

Figure 3

(A) KIR channel conductance over a range of Vm values with increasing concentrations of K+. With 3 mM [K+] o at -40 mV (the approximate resting Vm; dotted arrows), KIR channel conductance is very low. Raising K+ greatly increases KIR channel activity at a given Vm; channel activity is also increased by membrane hyperpolarization. Data were plotted according to the eq. 1 in the text. (B) The relationship between external K+ concentration and KIR channel conductance based on the K+- and voltage-dependence of KIR2 channels, calculated using eq. 1 (see text), and measured effects of external K+ on PA SM Vm [26,37]. Elevation of [K+]o from 3 mM to 8 mM causes an enormous, near-maximal increase in KIR channel conductance, with further elevations to 15 and 25 mM causing only small subsequent increases in conductance. (C) Subtracted 100-μM Ba2+-sensitive currents from a freshly dissociated EC from a rat PA in response to a voltage ramp from -140 to 0 mV indicating the presence of functional KIR2 channels in these cells. External K+ was 6 mM in this experiment.