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Nanoscale Research Letters logoLink to Nanoscale Research Letters
. 2017 Mar 7;12:172. doi: 10.1186/s11671-017-1927-x

Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition

Xingwei Ding 1,2, Cunping Qin 2, Jiantao Song 1, Jianhua Zhang 1,2,, Xueyin Jiang 3, Zhilin Zhang 1,3
PMCID: PMC5340739  PMID: 28274091

Erratum

The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here:

“This work was funded by National Key Basic Research Program of China (2015CB655005) and Science and Technology Commission of Shanghai Municipality Program (14DZ228090).”

Footnotes

The online version of the original article can be found under doi:10.1186/s11671-017-1852-z.

Reference

  • 1.(2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. Lett 12:63. doi:10.1186/s11671-017-1852-z [DOI] [PMC free article] [PubMed]

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