Scientific Reports 6: Article number: 34474; 10.1038/srep34474 published online: September 29 2016; updated: May 08 2017.
As the authors of references 25 and 26 also employed plasma-assisted molecular beam epitaxy for the synthesis of hexagonal boron nitride films, the authors would like to make the following changes to the Introduction section of their Article:
“In addition the direct growth of hBN on a two-dimensional material (HOPG) offers an alternative to chemical vapour deposition23,24,25,26 and atomic layer deposition27 of hBN on metal substrates; this approach must typically be complemented by complex protocols for the removal and transfer of the grown films”.
Should read:
“In addition the direct growth of hBN on a two-dimensional material (HOPG) offers an alternative to chemical vapour deposition23,24, MBE25,26 and atomic layer deposition27 of hBN on metal substrates; this approach must typically be complemented by complex protocols for the removal and transfer of the grown films”.