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. 2020 Jan 9;10(1):122. doi: 10.3390/nano10010122

All-Plasmonic Switching Effect in the Graphene Nanostructures Containing Quantum Emitters

Mikhail Yu Gubin 1, Andrey Yu Leksin 1, Alexander V Shesterikov 1, Alexei V Prokhorov 1,*, Valentyn S Volkov 2
PMCID: PMC7022262  PMID: 31936492

Abstract

Nonlinear plasmonic effects in perspective 2D materials containing low-dimensional quantum emitters can be a basis of a novel technological platform for the fabrication of fast all-plasmonic triggers, transistors, and sensors. This article considers the conditions for achieving a strong coupling between the surface plasmon–polariton (SPP) and quantum emitter taking into account the modification of local density of optical states in graphene waveguide. In the condition of strong coupling, nonlinear interaction between two SPP modes propagating along the graphene waveguide integrated with a stub nanoresonator loaded with core–shell semiconductor nanowires (NWs) was investigated. Using the 2D full-wave electromagnetic simulation, we studied the different transmittance regimes of the stub with NW for both the strong pump SPP and weak signal SPP tuned to interband and intraband transition in NW, respectively. We solved the practical problem of parameters optimization of graphene waveguide and semiconductor nanostructures and found such a regime of NW–SPP interaction that corresponds to the destructive interference with the signal SPP transmittance through the stub less than 7% in the case for pump SPP to be turned off. In contrast, the turning on the pump SPP leads to a transition to constructive interference in the stub and enhancement of signal SPP transmittance to 93%. In our model, the effect of plasmonic switching occurs with a rate of 50GHz at wavelength 8µm for signal SPP localized inside 20nm graphene stub loaded with core–shell InAs/ZnS NW.

Keywords: graphene nanoplasmonics, graphene waveguide, core–shell nanowires, surface plasmon–polaritons, nonlinear plasmon–exciton interactions, FDTD method

1. Introduction

The achievements of modern 2D material science [1,2,3], graphene nanotechnologies [1,4,5], and nanoplasmonics [6,7] give hope to the fabrication of novel ultra-fast plasmonic nanodevices in the near future. Such devices should be based on the new methods of surface plasmon–polariton (SPP) manipulations [8] in graphene, a good feature of which is the high localization of the electromagnetic field at the interface. The interaction between SPP modes in these plasmonic nanostructures can be realized through the use of both electronic and optical nonlinearities. Such nonlinearities can be achieved through the interaction of several graphene SPPs with chromophores (emitters) placed in the proximity of the graphene sheet. However, the efficiency of such an interaction strongly depends on the conditions of SPP–chromophore coupling. This means that the SPP–chromophore coupling constant should exceed the characteristic rate of electron scattering in graphene [9] and the spontaneous relaxation rate in the chromophore [10,11]. The last condition becomes very important since the spontaneous relaxation rate of the chromophore is strongly modified under the increase in the local density of optical states (LDOS) near the conductive surface.

This paper presents the results of analytical and numerical simulation of propagating the near- and mid-infrared electromagnetic fields localized on graphene sheets. The features of the SPP propagation through the empty graphene stub nanoresonator integrated with graphene waveguide were studied. It is shown that the tuning of the stub height leads to the reduction of the signal SPP transmittance through the waveguide to almost zero. We propose to load a semiconductor nanowire (NW) into a stub nanoresonator and use it for the achievement of strong SPP–chromophore coupling using Ladder-type SPP–NW interaction scheme. Optimizing the NW parameters, we show the possibility to control the transmittance of the signal SPP by changing the intensity of the pump SPP. In particular, turning off the pump SPP, the transmittance of the signal SPP mode is kept constant at a level close to zero, but, when the pump SPP is turned on, the signal SPP transmittance achieves 93%.

To accomplish this goal, we developed a quasi-classical approach to describe nonlinear plasmon–exciton interactions in multi-photon schemes [12], and also demonstrated the possibility for the realization of strong coupling conditions in a high-LDOS system. In addition, we used analytical and numerical methods to analyze the stability of the steady-state regimes of the waveguide transmittance. The presented approaches can be used for further development of the nonlinear theory of plasmon–exciton interactions in strong-coupling condition for a high-LDOS system. At the same time, the discussed applied effect of all-plasmonic switching may have a crucial role to play in the implementation of ultrafast plasmon transistors [13], plasmonic metasurfaces [14], and systems with “ultra-fast response” based on them.

2. Mathematical Models for the Electrical Conductivity of Single Graphene Sheet and Two Coupled Graphene Sheets

We start with the consideration of the propagation problem for the SPPs in 2D graphene structures [15]. The electromagnetic field couples with the graphene sheet and then SPPs start to propagate along it [9,16] only if the photon energy is less than double the chemical potential μc of graphene, ω<2μc [1] because, under this condition, the real part of dielectric permittivity becomes negative, i.e., graphene demonstrates metal-like properties. For example, the real part of permittivity becomes negative at wavelengths longer than 1.5µm for highly doped graphene with value μc=0.6eV (further, we assume that the electron scattering time τ is 0.9ps) taken from the literature [17,18].

In the general case, the total conductivity of graphene can be described by the Kubo formula [19]:

σω,μc,τ,T=ie2/π2ω+i/τ0ϵfdϵϵfdϵϵdϵie2ω+i/τ/π20fdϵfdϵω+i/τ24ϵ/2dϵ, (1)

where 1/τ is the scattering rate of electrons, fdϵ=1/eϵμc/kT+1 is the Fermi–Dirac distribution function, T is the temperature (further, we everywhere assume T=300K), k is the Boltzmann constant, h2π, h is the Planck constant, and e is the electron charge (see Figure 1).

Figure 1.

Figure 1

Real (solid red curve) and imaginary (dashed blue curve) parts of the conductivity of doped graphene with μc=0.6eV, τ=0.9ps.

Equation (1) can be separated into two parts, one of which corresponds to the intraband conductivity approximated in the form

σintraω,μc,τ,T=i8σ0kT/hω+i/τμckT+2lneμckT+1, (2)

where σ0=πe2/2h. For the case when kTμc,ω, the second integral in Equation (1) can be approximated as follows

σinterω,μc,τ,Tiσ0πln2μcω+i/τ2μc+ω+i/τ. (3)

Intraband conductivity becomes dominant under the condition μc>ω, as well as the interband conductivity, takes considerable values under condition μc<ω. Thus, for terahertz, far- and mid-infrared radiations and μc=0.6eV, the effect of interband conductivity can be neglected [1]. This is confirmed by the dependence of inter- and intraband conductivity for graphene on wavelength shown in Figure 2a,b.

Figure 2.

Figure 2

(a) The dependence of interband conductivity σinter (solid red line) and Pade approximation σ¯inter (dotted blue line) normalized to σ0 on the wavelength. (b) The dependence of intraband conductivity σintra normalized to σ0 on the wavelength, μc=0.6eV, τ=0.9ps.

The interband conductivity in Equation (3) can be approximated by the Pade formula [20] in the form:

σ¯interω=a0+a1·iω+a2·iω21+b1·iω+b2·iω2. (4)

The corresponding coefficients can be found by solving the system of equations:

10ωp12ωp1Θωp1ωp12Γωp10ωp10ωp1Γωp1ωp12Θωp110ωp22ωp2Θωp2ωp22Γωp20ωp20ωp2Γωp2ωp22Θωp210ωp32ωp3Θωp3ωp32Γωp3a0a1a2b1b2=Γωp1Θωp1Γωp2Θωp2Γωp3, (5)

where Θω=Imσinter and Γω=Reσinter. In particular, using the parameters in Table 1 for approximation nearby λ=8µm, we obtained the following values of coefficients a0=2.346×108, a1=2.112×1020, a2=9.589×1039, b1=6.745×1019, and b2=1.007×1031 within the fitting of Kubo formula by the following three reference wavelengths: λp1=7.2µm, λp2=8.2µm and λp3=9.2µm (ωpi=2πcλpi, i=1,2,3). In this case, the dielectric permittivity of graphene sheet with the effective thickness Δg can be calculated as follows

εgr=1+iσintraωΔgε0=1+iσ1ωε01iωτ, (6)

where a new parameter σ1=e2kTτπ2ΔgμckT+2lneμckT+1 was introduced [21]. Here, it should be noted that, for the numerical algorithms, we use the relation σintra=σ1Δg1iωτ and the effective thickness Δg. For the realization of the 2D finite difference time domain (FDTD) method, the permittivity of graphene is represented in the following form [21]:

εgr=1+iσ1ωε0τσ11iωτε0. (7)

Table 1.

The characteristics of SPP generated at the graphene sheets with parameters: μc=0.6eV, τ=0.9ps, T=300K, Δg=2nm, and d=20nm.

λ0,µm εd 2μcω σ1,S/m σintra,S σinter,S
4 1 (air) 3.88 3.193×107 3.5×107+1.49×104i 2.51×1081.02×105i
2.103 (SiO2) 3.88 3.193×107 3.5×107+1.49×104i 2.51×1081.02×105i
1.96 2.103 (SiO2) 1.9 3.193×107 8.4×108+7.3×105i 3.24×1082.26×105i
2.56 2.022 2.483 3.193×107 1.44×107+9.54×105i 2.8×1081.65×105i
8.04 2.022 7.8 3.193×107 1.42×106+3×104i 2.39×1084.98×106i
λ0,µm εd Single Layer Double-Layer Sheet
λSPP,nm LSPP,µm Reξ,nm nEF+R λSPP+,nm LC,nm L¯SPP+,µm
4 1 (air) 104.6 3.1 33 49 81.5 61 3.5
2.103 (SiO2) 49.7 1.5 15.8 86.1 46.5 108.3 1.6
1.96 2.103 (SiO2) 8.86 0.3 2.82 221 8.86 2.3×106 0.3
2.56 2.022 18.8 0.7 6 136 18.8 2641 0.7
8.04 2.022 224.2 3.8 71 59.3 135.5 74 3.7

The wave vector of SPP propagating along a single graphene sheet can be written as follows

kSPP=k0εd2εdε0cσg2, (8)

where σgσintra, k0=2πλ0 is the wave vector of the electromagnetic field at a wavelength λ0 in vacuum, εd is the dielectric permittivity of the host medium, ε0 is the electric constant, and c is the speed of light in vacuum. The wavelength of SPP localized on the graphene sheet has the form λSPP=2πkSPP and the propagation length (i.e., the characteristic distance of SPP decay) is given by the expression

LSPP=λ04πImkSPPk0. (9)

Now, we consider the formation of coupled SPPs propagating along the two parallel graphene sheets placed at a small distance d between them [1,22]. In this case, the dispersion relation for SPP propagation constants β can be written in the form [18]

kh±ekhd1=2ik0cεdε0/σg, (10)

where kh=β2k02. The solution β+ corresponds to symmetric and β corresponds to anti-symmetric SPP mode. We discuss the symmetric mode only because it leads to the highest density of the electromagnetic field in the space between sheets. It is necessary to increase the efficiency of matter-field interaction with chromophore loaded in the space between sheets.

The strong and weak coupling can be realized between sheets. To determine the type of coupling, we compare the distance d between sheets with the characteristic parameter ξ given by

ξ=Reσgicε0εdk0. (11)

In condition d>ξ, the dispersion curves have a hyperbolic form, and wave vectors of graphene plasmons coincide with the same ones for the case of single layer graphene, which corresponds to the weak coupling. The condition d<ξ corresponds to the strong SPP–graphene coupling, and the dispersion curves can significantly differ from the same ones for a single sheet of graphene.

In our work, we use both the direct numerical simulation of Equation (10) and its approximate analytical solution for the weak SPP–graphene coupling regime. In the last case, the propagation constants for the symmetric and antisymmetric SPP modes [18] are given by the expressions β+=kSPP+Δβ+ and β=kSPP+Δβ, where Δβ+ and Δβ are the small quantities relative to kSPP. After solving Equation (10), the approximate expressions for β± have the forms:

β±kSPP+2iε0εdω2/σgkp1up1upkSPP/kp±upkSPPd, (12)

where kp=kSPP2εdk02 and up=ekpd.

The values of propagation constants correspond to the formation of SPPs in graphene at the wavelengths λSPP±=2πReβ± depending on distance d between sheets. In this case, the effective refractive index can be determined as nEF±=nEF±R+inEF±I=β±k0 and the characteristic length of the coupling is given by the relation

LC=π22Cg, (13)

where Cg is the coupling constant and it can be presented as Cg=ββ+2. The propagation length of SPP for two sheets is defined as L¯SPP±=λ04πImnEF±.

Based on the simulation parameters in Table 1 and fixed value d=20nm, we obtained different regimes of coupling. For example, the initialization of SPP by electromagnetic field source with wavelength 8.04µm leads to the formation of a strong coupling regime with propagation constants that can be calculated only numerically by solving Equation (10) (see Figure 3). Note that interband conductivity does not influence the curves in Figure 3. On the other hand, Figure 4 shows the curves calculated in accordance with Equation (12) in the regime of weak SPP–graphene coupling for wavelength 2.56µm. They are almost identical with the numerical solution of Equation (10), but the contribution of interband conductivity increases at this wavelength. However, we did not take into account the correction associated with interband conductivity in FDTD simulation (see Equation (3)), which slightly reduced the accuracy of our numerical experiments for 2.56µm wavelength.

Figure 3.

Figure 3

Propagation constants β+ (solid red line) and β (dashed blue line) for signal SPP modes for the double-layer graphene sheets versus the interlayer distance d numerically calculated from Equation (10). Parameters correspond to the strong coupling regime for wavelength 8.04µm in Table 1.

Figure 4.

Figure 4

Propagation constants β+ (solid red lines) and β (dashed blue lines) for SPP modes in the double-layer graphene sheets versus the interlayer distance d (a) with and (b) without taking into account the interband conductivity of graphene calculated by using the analytical solutions of Equation (12). Parameters correspond to a weak coupling regime for wavelength 2.56µm in Table 1.

3. Numerical Simulation of SPP Generation in Graphene Sheets Using the FDTD Method

We assume that the graphene sheet is located in plane y=0 in Figure 5, and the source is the electric or magnetic dipole localized near the surface. In the two-dimensional case, all the functions do not change across z axis, and the derivatives of these functions with respect to z are zero. Then, the system splits into two parts corresponding to the TE and TM modes.

Figure 5.

Figure 5

The schematic illustration of the functioning numerical algorithm in the FDTD method for evaluating the graphene sheet.

In this case, the evolution of the electromagnetic signal is described by two independent systems of equations for the components of electric field E, magnetic field H, and electric displacement D in the form [23]:

TM-mode TE-mode
Dzt=1ε0μ0H˜yxH˜xy Dxt=1ε0μ0H˜zy
H˜xt=1ε0μ0Ezy Dyt=1ε0μ0H˜zx
H˜yt=1ε0μ0Ezx H˜zt=1ε0μ0ExyEyx

The quantities E and D are normalized:

E=ε0μ0E˜,D=1ε0μ0D˜.

The derivation of auxiliary difference equations for each mode was carried out using the PML method in the frequency domain. The following definitions were used:

1ε0μ0=c,tiω,i=1,

where c is the speed of light in vacuum. We obtained:

TM-mode TE-mode
iωDzεFzxεFzy=C0HyxHxy iωHzμFzxμFzy=C0ExyEyx
iωHxμFxxμFxy=C0Ezy iωDxεFxxεFxy=C0Hzy
iωHyμFyxμFyy=C0Ezx iωDyεFyxεFyy=C0Hzx

where permittivities of graphene are rewritten via dependencies of its conductivity on coordinates σgu (u=x,y) as follows:

εFzx=1+σgxiωε0εFzy=1+σgyiωε0μFxx=1+σgxiωε01μFxy=1+σgyiωε0μFyx=1+σgxiωε0μFyy=1+σgyiωε01μFzx=1+σgxiωε0μFzy=1+σgyiωε0εFxx=1+σgxiωε0εFxy=1+σgyiωε0εFyx=1+σgxiωε0εFyy=1+σgyiωε0

For example, for considered TM-mode, we reordered the equations and obtained:

iω1+σgxiωε011+σgyiωε0Hx=C0Ezy, (14a)
iω1+σgxiωε01+σgyiωε01Hy=C0Ezx, (14b)
iω1+σgxiωε01+σgyiωε0Dz=C0HyxHxy, (14c)

From Equation (14a), we derived:

ω1+σgyiωε0Hx=C0Ezy+σgxiωε0Ezy

or in another form:

Hxt+σgyε0Hx=C0Ezy+σgxε00TEzyt. (15)

Next, we use standard approximation:

HxHxn+1i,j+12+Hxni,j+122,HxtHxn+1i,j+12Hxni,j+12Δt,0TEzytΔtk=0nEzn+12i,j+1Ezn+12i,jΔx.

We introduce the definition:

curl_xn=Ezn+12i,jEzn+12i,j+1

and, from Equation (15), we obtain:

Hxn+1i,j+12Hxni,j+12Δt+σgj+12ε0Hxn+1i,j+12+Hxni,j+122=C0curl_xnΔx+σgiΔtε0Δxk=0ncurl_xk,

where i,j are the spatial coordinate indexes, n is the time coordinate index, Δx is the step along the spatial axis, and Δt is the step along the time axis.

A similar transformation for other Equation (14) was carried out, and we obtained the self-consistent system of equations for all field components and numerically realized the algorithm of calculation of these components. At the same time, the field source is a harmonic function in the form

Dzi,j=sinω0t,

where ω0 (λ0=2πcω0) is the frequency (wavelength) of electromagnetic field source.

We numerically realized the FDTD algorithm and developed an application for calculating electromagnetic modes in the proximity of graphene sheets. Comparing our simulation results for single and double sheets of graphene with known results, we concluded that our FDTD realization is in good agreement with them (see [18,22] and Figure 6). Then, using our application, we performed original full-wave electromagnetic simulation for graphene sheets with different wavelengths of source (see Table 1). All numerical results correspond to analytical estimations in accordance with Equations (9)–(13).

Figure 6.

Figure 6

The spatial distribution of field component Ey for SPP generated on a pair of graphene sheets. The FDTD method is our own implementation in MATLAB. The parameters correspond to those in [22]. Taking into account new values of conductivities [22]: σ1=8.91×104S/m and σintra=9.7×105+1.6×103iS (slight differences from Hossain and Rana [22] are associated with calculation accuracy). The calculated value λSPP+=10.41µm.

4. The Model of Ladder-Type Nonlinear Interactions between Two SPPs and Semiconductor NW Loaded into Graphene Stub Nanoresonator

Now, we investigate the graphene waveguide integrated with the stub nanoresonator (see Figure 7) as a more complicated model for simulation. The transmittance coefficient of SPP propagating through the waveguide with stub is described by [24]:

Tλ=t1+s1s31r3eiϕλeiϕλ2, (16)

where ϕλ=2πΔSλ; parameters ri, ti, and si correspond to the reflection, transmission, and splitting coefficients in the ith cross-section (ith Ports) of the stub in Figure 7a, respectively. Initially, we tune our waveguide to the condition of minimum transmittance, i.e., when electromagnetic mode localized by waveguide cannot pass further stub position. This setting is very simple and satisfies the requirement that the “plasmonic path” of mode in the stub ΔS=2D+dnEF+R (taking into account the distance between sheets in a waveguide) is a half-integral multiple of the wavelength 2n+1λ02 (n=0,1,2), where D is the height of stub nanoresonator (see Figure 7).

Figure 7.

Figure 7

(a) The model of graphene waveguide integrated with stub nanoresonator loaded with core–shell NW. (b) The relative position between energy gaps and band offsets of InAs-ZnS bulk semiconductors, where EV1=4.55eV for the top of the valence band and EC1=4.2eV for the bottom of the conduction band in InAs; EV2=6.52eV, EC2=2.98eV the same in ZnS; the Ladder-type interaction scheme of two SPP modes with frequencies ω1 (pump) and ω2 (signal); and 9.9nm core radius InAs/ZnS NW with energy levels E1=4.55eV, E2=4.063eV, and E3=3.908eV.

Using the parameters in Table 1 for 8.04µm and tuning system to the minimum of 0th order, we can approximately estimate D=23.8nm. The numerical simulation of the system with such parameters gives excellent evidence of our theoretical estimations. In particular, predicted characteristics (in Table 1) agree with calculated values for the strong coupling regime. The most important result, as one can see in Figure 12a, is that the SPP mode at a wavelength λ0=8.04µm is completely blocked by the stub. We can consider that the “plasmonic transistor” is locked under these conditions.

In this part, we consider the possibility to control the SPP propagation due to nonlinear plasmonic resonance in nanostructures [25]. We assume that semiconductor NW loaded into graphene stub nanoresonator interacts with two SPP modes [9], which simultaneously propagate along the pair of graphene sheets, as shown in Figure 7. The Hamiltonian of the system NW+SPPs has the following form:

H=H0+Hv, (17a)
H0=ω1222+ω12+ω2333, (17b)
Hv=Ω˜121+Ω˜112+Ω˜232+Ω˜223, (17c)

where H0 is the Hamiltonian of unexcited NW and Hv is the Hamiltonian of interaction between NW and two SPPs with the accordance of the Ladder-type scheme in Figure 7. Here, 11S(h) corresponds to the energy level of the hole in the valence band; 21S(e) and 31P(e) describe electronic levels in conduction band; Ω˜1 and Ω˜2 are the Rabi frequencies of pump and signal fields, respectively; and ω12 and ω23 are the frequencies of interband and intraband transitions in NW, respectively.

The evolution of the presented system is described by the Liouville equation:

ρ˜t=iH,ρ˜Γ^, (18a)
ρ˜=ρ˜1111+ρ˜2222+ρ˜3333+ρ˜1212+ρ˜2121+ρ˜2323+ρ˜3232+ρ˜1313+ρ˜3131, (18b)
Γ^=γ2122ρ˜212ρ˜21+ρ˜22+γ3233ρ˜223ρ˜32+ρ˜33+γ3133ρ˜213ρ˜31+ρ˜33, (18c)

where ρ˜ is the density matrix for energy levels in NW, Γ^ is the Lindblad superoperator describing the processes of spontaneous relaxation in the system, and γij are the spontaneous relaxation rates for corresponding transitions, i,j=1,2,3 and ij.

Using Equations (17)–(18), it is possible to obtain the system of equations for the evolution of density matrix elements:

ρ˜˙11=iΩ˜1ρ˜21iΩ˜1ρ˜12+2γ21ρ˜22+2γ31ρ˜33, (19a)
ρ˜˙22=iΩ˜1ρ˜12iΩ˜1ρ˜21+iΩ˜2ρ˜32iΩ˜2ρ˜232γ21ρ˜22+2γ32ρ˜33, (19b)
ρ˜˙33=iΩ˜2ρ˜23iΩ˜2ρ˜322γ32ρ˜332γ31ρ˜33, (19c)
ρ˜˙12=iΩ˜1ρ˜22+iω12ρ˜12iΩ˜1ρ˜11iΩ˜2ρ˜13γ21ρ˜12, (19d)
ρ˜˙21=iΩ˜1ρ˜22iω12ρ˜21+iΩ˜1ρ˜11+iΩ˜2ρ˜31γ21ρ˜21, (19e)
ρ˜˙13=iΩ˜1ρ˜23+iω12+ω23ρ˜13iΩ˜2ρ˜12γ31ρ˜13γ32ρ˜13, (19f)
ρ˜˙31=iΩ˜1ρ˜32iω12+ω23ρ˜31+iΩ˜2ρ˜21γ31ρ˜31γ32ρ˜31, (19g)
ρ˜˙23=iω23ρ˜23+iΩ˜1ρ˜13+iΩ˜2ρ˜33iΩ˜2ρ˜22ρ˜23γ21+γ32+γ31, (19h)
ρ˜˙32=iω23ρ˜32iΩ˜1ρ˜31iΩ˜2ρ˜33+iΩ˜2ρ˜22ρ˜32γ21+γ32+γ31. (19i)

We use the approximation of slowly varying amplitudes for passing to the new variables:

ρ˜12=ρ12eiω1t,ρ˜23=ρ23eiω2t,ρ˜13=ρ13eiω1+ω2t,ρ˜11ρ11,ρ˜22ρ22,ρ˜33ρ33,Ω˜1=Ω1eiω1t,Ω˜2=Ω2eiω2t,

where ω12 is the frequency of the pump (signal) field. The system in Equation (19) transforms into a new form:

ρ˙11=iΩ1ρ21iΩ1ρ12+2γ21ρ22+2γ31ρ33, (20a)
ρ˙22=iΩ1ρ12iΩ1ρ21+iΩ2ρ32iΩ2ρ232γ21ρ22+2γ32ρ33, (20b)
ρ˙33=iΩ2ρ23iΩ2ρ322γ32ρ332γ31ρ33, (20c)
ρ˙12=iΩ1ρ22+iΔρ12iΩ1ρ11iΩ2ρ13γ21ρ12, (20d)
ρ˙21=iΩ1ρ22iΔρ21+iΩ1ρ11+iΩ2ρ31γ21ρ21, (20e)
ρ˙13=iΩ1ρ23+iδρ13iΩ2ρ12γ31ρ13γ32ρ13, (20f)
ρ˙31=iΩ1ρ32iδρ31+iΩ2ρ21γ31ρ31γ32ρ31, (20g)
ρ˙23=iδΔρ23+iΩ1ρ13+iΩ2ρ33iΩ2ρ22ρ23γ21+γ32+γ31, (20h)
ρ˙32=iδΔρ32iΩ1ρ31iΩ2ρ33+iΩ2ρ22ρ32γ21+γ32+γ31. (20i)

where Δ=ω12ω1, δ=ω12+ω23ω1ω2. Defining new variables, we represent the system in Equation (20) in the following form:

n˙21=2iΩ1ρ122iΩ1ρ21+iΩ2ρ32iΩ2ρ234γ21ρ22+2γ32γ31ρ33, (21a)
n˙32=2iΩ2ρ232iΩ2ρ32iΩ1ρ12+iΩ1ρ214γ32ρ332γ31ρ33+2γ21ρ22, (21b)
ρ˙21=iΩ1n21iΔρ21+iΩ2ρ31γ21ρ21, (21c)
ρ˙32=iΩ2n32iδΔρ32iΩ1ρ31γ21+γ32+γ31ρ32, (21d)
ρ˙31=iΩ1ρ32iδρ31+iΩ2ρ21γ31+γ32ρ31, (21e)

where n21=ρ22ρ11 and n32=ρ33ρ22.

In the case the system reaches the stationary regime (i.e., n˙21=n˙32=ρ˙21=ρ˙31=ρ˙32=0), the polarization and population imbalances have the steady-state values. In particular, we express ρ31 from Equation (21e)

ρ¯31=iΩ2ρ¯21iΩ1ρ¯32iδ+γ31+γ32, (22)

where ρ¯21, ρ¯32 and ρ¯31 are the stationary values of polarizations for corresponding transitions. We substitute ρ¯31 into Equations (21c) and (21d) and obtain

0=iΩ1n21ρ21iΔ+γ21+Ω22iδ+γ31+γ32+Ω1Ω2ρ32iδ+γ31+γ32, (23a)
0=iΩ2n32+Ω1Ω2ρ21iδ+γ31+γ32ρ32γ21+γ32+γ31+iδΔ+Ω12iδ+γ31+γ32. (23b)

Solving the system in Equation (23), we find stationary solutions for ρ¯21 and ρ¯32 in the following form

ρ¯21=iΩ1Ω12n¯21+Ω22n¯32+D2n¯21Γ32Ω12D1+D1D2Γ32+Ω22Γ32, (24a)
ρ¯32=iΩ2Ω12n¯21+D1D2n¯32+Ω22n¯32Ω12D1+D1D2Γ32+Ω22Γ32, (24b)

where D1=iΔ+γ21; D2=iδ+γ31+γ32; Γ32=iδΔ+γ21+γ31+γ32; n¯21=ρ¯22ρ¯11; n¯32=ρ¯33ρ¯22; and ρ¯11, ρ¯22, and ρ¯33 are the stationary values of populations for the corresponding energy levels. Substituting Equation (24) into the system in Equation (20) and solving it, we can find the stationary solutions for the populations of energy levels as follows:

ρ¯11=1ρ¯22ρ¯33, (25a)
ρ¯33=Ω22Ω12AΩ22Γ12+δΔ2+Γ12Γ2γ21+Γ1γ21Ω12, (25b)
ρ¯22=Ω12A(Ω24Γ1γ32+Ω22(δ2Γ22+Γ2+Γ3γ212δΔΓ2γ32+Γ2Γ12Γ2+Δ2γ32+Γ1γ21γ32+Γ1Γ2+γ21γ32Ω12)+B), (25c)

where

A=Ω26Γ1Γ3+BΔ2+γ212+2Ω12+Ω24(δ2+Δ2+Γ1Γ1+2Γ3Γ2γ212δΔΓ1Γ3+Γ2γ21+γ212+Γ1+Γ2Γ1γ31Ω12)+Ω22(δ22Γ22+Γ1Γ3γ212+Δ2Γ1Γ3+4Γ2γ21+2Γ12+γ21γ31Ω12+2δΔΓ2γ21δ2+Δ2+Γ12+2Γ2γ21+γ31γ32Ω12+Δ2Γ2Γ1Γ2Γ3+2Γ2γ212+γ32Ω12+Γ1Γ2+Ω12×Γ22Γ1+Γ3γ212+Γ12+Γ22+2γ21γ32Ω12),B=Γ2γ21δΔ2+Γ12δ2+Γ22+2δΔδ+Γ1Γ2Ω12+Ω14,Γ1=γ21+γ31+γ32,Γ2=γ31+γ32,Γ3=γ21+γ31.

We needed to carry out the correctness and stability analysis of our stationary solutions. Initially, we substituted the fixed values of material parameters into Equations (24)–(25) and changed (optimized) the intensities of signal and pump SPPs (and field detunings) in order to achieve the stationary regime of the system with physically realizable parameter values of populations and polarizations n21, n32, ρ21, ρ31, and ρ32. Next, we numerically simulated the system in Equation (20) with initial values of matrix elements ρ11=1, ρ22=ρ33=ρ21=ρ31=ρ32=0 and found that, after evolution, all matrix elements reached the stationary values for Equations (22) and (24)–(25). Note that Equation (24) can be used independently of the solutions to Equation (25) if we initially know the values of level populations satisfying to the stationary regime in the scheme. Thus, we realized the stress-test of our numerical solutions using the deviation of the initial values of the density matrix elements from stationary values and proved the stability of our stationary solutions.

Besides, we are interested in the contribution of various nonlinear processes to the formation of stationary propagation regimes of a signal SPP. For this purpose, we substitute Equation (22) into Equation (21d) and obtain the following equation for the evolution of the density matrix element corresponding to polarization on signal transition:

ρ˙32=iΩ2n32+Ω1Ω2ρ21iδ+γ31+γ32Ω12ρ32iδ+γ31+γ32ρ32γ21+γ31+γ32+iδΔ. (26)

This representation is a power series expansion in the Rabi frequencies of the signal and pump SPPs. Equation (26) can be represented in the form that is convenient for the further analysis of various terms contribution into system dynamics:

ρ˙32=i=14Xi, (27)

where X1=iΩ2n32 corresponds to the induced single-quantum transitions in the system, X2=Ω1Ω2ρ21iδ+γ31+γ32 corresponds to the nonlinear scattering, X3=Ω12ρ32iδ+γ31+γ32 corresponds to the cross-interaction between SPPs, and X4=ρ32γ21+γ31+γ32+iδΔ corresponds to the linear effects associated with the dispersion and spontaneous decay of the excited states. The estimation of the contribution of various effects into graphene device functioning in the stationary regime is shown in Table 2.

Table 2.

The contribution of various effects into the formation of the stationary regime for signal SPP.

ρ21 ρ32 ρ31 X1 X2 X3 X4
ρ¯21 ρ¯32 ρ¯31 1.56×1012i 1.88×10106.86×1010i 4.87×1011+1.51×1012i 4.68×10112.00×1012i

5. Tuning the NW Size to Satisfy the Resonance Conditions for Intraband and Interband Transitions Induced by Signal and Pump SPPs

We start with tuning intraband transition 1Se1Pe in core–shell NW to the wavelength λ2 for signal SPP supported by a pair of graphene sheets under the condition that interband transition 1Sh1Se is tuned to the wavelength λ1 for pump SPP supported by a graphene waveguide too. The suitable active center for this purpose is the InAs/ZnS core–shell NW [26,27,28,29]. The parameters of such NW taken from the literature are summarized in Table 3. The information about the position of the energy levels is presented in Table 4.

Table 3.

The parameters of core–shell NW and transitions in it.

Semiconductor Material ε mc, m0 mh, m0 Eg,eV aNW,nm 1Se1Pe 1Sh1Se
λ2,µm μ32,C·m λ1,µm μ12,C·m
core, InAs 12.3 0.026 0.41 0.35 9.9 8.04 5.91×1028 2.56 14.9×1029
shell, ZnS 8.3 0.27 0.58 3.54 10

Table 4.

The bands and energy levels positions in InAs/ZnS core–shell NW.

Semiconductor
Material
Top of the Valence
Band EV,eV
Bottom of the Conduction
Band EC,eV
Energy Level
E1,eV
Energy Level
E2,eV
Energy Level
E3,eV
core, InAs 4.55 4.2 4.55 4.063 3.908
shell, ZnS 6.52 2.98

We assume that neither NW (source and NW inside of the stub) can support propagating guided modes, but the near-field interaction regime corresponds to the generation of leaky modes [30]. Since the z-guided modes are not supported by NW, to calculate the corresponding wavelengths of intraband and interband transitions, we use the following equations [27]

ω12=eEg+2κ1,02DNW21mc+1mh, (28a)
ω23=2DNW2mcκ1,12κ1,02, (28b)

where Eg is the band gap of the semiconductor; mc and mh are the effective masses of electron and hole, respectively; κ1,1=4.493 and κ1,0=π are the roots of the Bessel function; and aNW=DNW/2 is the radius of the NW core.

The dipole moment of the interband transition is calculated in accordance with the formula [31]

μ122=e26m0ω12m0mc1EgeEg+ΔsEg+2Δs/3, (29)

where Δs is the spin-orbit splitting for the material of NW core (Δs=0.43eV) and m0 is the free-electron mass. More complicated formulas are required to calculate the dipole moment of the intraband transition, but they can be approximated by the expression μ32=0.433eaNWΛ, where Λ=3εZnS/2εZnS+εInAs. Using NW radius 9.9nm, we get the wavelength λ2=8.04µm for signal SPP and λ1=2.56µm for pump SPP that are simultaneously supported by graphene waveguide with μc=0.6eV and τ=0.9ps. The other working interaction parameters were obtained, as summarized in Table 3.

6. Local Density of States and Modification of Relaxation Rate and Coupling Constant of NW at a Nanoscale Distance to Graphene

The emitter relaxation rate can change due to a modification in the local density of plasmonic states of the self-consistent field, for example, when the emitter is placed in a resonator. In the beginning, we consider the simplest case when the emitter is located near the flat conductive surface [9,32,33,34]. We introduce a set of parameters κ=ΓΓ0, κSPP=ΓSPPΓ0, κSP=ΓSPΓ0, and κL=ΓLΓ0, which describe the change in relaxation rate of the emitter, where Γ=Γ0+Γ00Kkdk is the total rate of relaxation, ΓSP=Γ0k1Kkdk is the SP-mediated rate of evanescent waves generation, ΓSPP=Γ0kSPPΔkkSPP+ΔkKkdk is the relaxation rate of propagated SPPs, ΓL=Γ0+Γ00k1Kkdk is the radiative relaxation rate, and Γ0γij0 is the relaxation rate of an isolated emitter for the corresponding transition. Here, Kk=34Reμ2μ2rsμ2μ2rp1k2k12+2μ2μ2rpk2k12kkz1k1e2ikz1z0 [9,35] depends on both the NW–graphene distance z0 and on the NW radius by Equation (28), where ki=k0Reniω is the absolute value of wave vector in ith medium with refractive index niω, k is the in-plane wave vector, μ and μ are the components of the transition dipole parallel and perpendicular to the graphene plane, rps=r1,2ps+r2,3pse2ikz2dgr1+r1,2psr2,3pse2ikz2dgr are the generalized Fresnel reflection coefficients for p- and s-polarized plane waves of a single layer of thickness dgr (we take graphene thickness dgr=0.33nm), ri,jp=εjkziεikzjεjkzi+εikzj, and ri,js=μjkziμikzjμjkzi+μikzj are the Fresnel reflection coefficients for p- and s-polarized plane waves, respectively, for a single interface i,j with the medium of light incidence denoted by i, kzi=ki2k2; εi and μi are the permittivity and magnetic permeability, respectively, i,j=1,2,3. Index 1 corresponds to the dielectric layer with NW, 2 corresponds to the graphene layer, and 3 corresponds to the dielectric layer without NW. In our calculations, we use ε1=ε3=εd, ε2=εgr and μ1=μ2=μ3=1, μ=μ=μ1232, where in Equation (6) for εgr we change the effective thickness of graphene Δg on its real thickness dgr. Figure 8 shows the dependence of the integrand Kk as a function of the scattered field wave vector. Plasmon peaks in Figure 8 are seen as sharp peaks near the wave vectors kSPPλ1 and kSPPλ2 of SPPs, which correspond to the wavelengths λ1 for the pump and λ2 for signal incident fields. With the selected parameters, the K function does not have other peaks, thus we choose Δk=kSPPk1.

Figure 8.

Figure 8

The dependence of integrands K1 for wavelength λ1=2.56µm (dashed blue line) and K2 for wavelength λ2=8.04µm (solid red line) as a function of the in-plane wave vector k for emitting InAs/ZnS NW that is placed at 10nm from the graphene (parameters in Table 1).

In a full representation of the problem such as Equation (18), we can separate the coherent processes of SPP–NW interaction in Hamiltonian and all other relaxation processes in Lindblad superoperator. The second corresponds to the relaxation parameter κR=ΓΓSPPΓ0 that is obtained from the law of energy conservation κR+κSPP=κL+κSP=κ. Figure 9 demonstrates the giant enhancement of relaxation rate for distance z0=10nm between the center of NW and graphene in the selected wavelength range. We note that the dominant part of the excited NW energy is distributed to SPP generation. The contribution of other processes to the relaxation acceleration is presented in Figure 9 for the parameter κR. The plot for κR has a strong frequency dependence and we find that κRλ1=1, κRλ2=827. Then, we obtain γ3231=κRλ2γ32310=8.27×1011s1 and γ21=κRλ1γ210=5×108s1 (γ210=5×108s1, γ320=γ310=1×109s1, see [36]).

Figure 9.

Figure 9

The dependence of relaxation parameters κ (solid red line), κSPP (dotted blue line), and κR (dashed green line) as a function of incident field wavelength.

When the emitter is placed in a complex micro- or nanostructured medium, the relaxation rate can be presented as

γij=πωijε0μij2ρωij,r¯, (30)

where μij are the dipole moments of corresponding transitions. For vacuum, we have ρωij,r¯=ωij23π2c3 and consequently γij0=ωij3πε0c3μij2. In the case of an arbitrary medium, but for fixed orientation u of the dipole, the equation for LDOS can be represented as

ρuωij,r¯=2ωπc2ImuGEr¯,r¯,ωiju, (31)

where GEr¯,r¯,ωij is the electric Green function and r¯ is the radius-vector of the NW position. Finally, in the case of x-oriented waveguide mode in Figure 7, we can present LDOS in the form

ρω,r¯=13π2cnEF+Rω2λ02ϰω,r¯2 (32)

owing to the reduction of the characteristic wavelength by a factor nEF+Rω and taking into account the spatial distribution of the field ϰω,r¯=Eω,r¯Emaxω in the waveguide, normalized to the maximum value Emaxω. As a result, we have γij=κRωγij0, where κRω=nEF+Rωϰω,r¯=r¯c2 for radius-vector r¯c of the NW center. Using the parameters in Table 1 and Table 3 and extracting information about ϰω,r¯=r¯c from full-wave simulation, we obtain γ21=1.013×1011s1, γ32=γ31=1.094×1012s1 (γ210=5×108s1, γ310=γ320=1×109s1, ϰ1=0.1045, and ϰ2=0.5577). Note that the obtained result slightly differs from the previously obtained analytical results for an emitter near a flat graphene sheet.

We describe the energy of induced SPP–NW interaction using the coupling constants g12r¯=ω12ε0VEF12ϰ12r¯μ1232, where μ1232 are the dipole moments of corresponding transitions in NW, ϰ12r¯=E12r¯E12max, E12r¯Eω12,r¯, and VEF12=λ12nEF+R3 is the effective volume of interaction. Finally, we obtain g1=5.379×1012s1 and g2=3.318×1012s1.

7. Tuning the Parameters of Pump SPP for Switching the Stub-Resonator Loaded with NW from the Locking Regime to the Transmitting Regime of Signal SPP

Our goal is to induce in a graphene waveguide both pump SPP at a wavelength λ1=2.56µm and signal SPP at a wavelength λ2=λ0=8.04µm and to choose such Ω1=g1B and Ω2=g2a and frequency detunings to provide an additional phase shift of signal SPP Δϕmax equals to π (shift on half wavelength). Here, a and B are the amplitudes of signal and pump SPPs, respectively. The additional phase shift is given by Δϕmax=2πλ2nNWRDNW and must be provided with a large value of correction to the refractive index nNWR of NW material induced by strong nonlinear interaction between SPP modes and NW and described by Equation (24), where nNW=nNWR+inNWI. The correction to the complex refractive index can be expressed in the form nNWχNW/2, where χNW=Nμ32ε0E2ρ¯32 is the resonant part of the NW susceptibility, N=5×1019cm3 [37] is the carrier concentration, and E2 is the signal field strength. Hence, we obtained the necessary value of the matrix element ρ¯32 to realize the required phase shift in the stationary regime for signal SPP (see Equation (24b)). It corresponds to Reρ¯32=0.0717.

We chose the amplitude of the signal field equal to 1 photon (a=1) and the amplitude of the pump field equal to 4 photons (B=4) and obtained Ω1=2.151×1013s1 and Ω2=3.318×1012s1 with an efficiency E12r¯=ϰ12r¯E12max. Based on calculated Rabi frequencies Ω12, relaxation rates γij, and obtained stationary solutions to Equation (24), we plotted the frequency dependencies of the complex matrix element ρ¯32 and determined that the necessary value Reρ¯32=0.0717 corresponds to parameter values Δm=2×1013s1 and δm=2.132×1013s1 (see Figure 10a). Further, we determined that obtained stationary solutions completely agree with the results of direct numerical simulation of the system in Equation (20) (see Figure 10b). All calculated parameters are summarized in Table 5.

Figure 10.

Figure 10

(a) The frequency dependencies of real (solid red line) and imaginary (dashed blue line) parts of ρ¯32 for fixed detuning Δ=Δm. (b) The time dependencies of the real parts of ρ32 (thin green and red lines) and ρ12 (thick blue and red lines) calculated by using Equation (24) (dashed lines) and by using direct numerical simulation (solid lines) of the full system of differential Equation (20) for density matrix elements upon Ladder-type interaction of two SPP modes and core–shell NW.

Table 5.

The stationary solutions of the system in Equation (20) and corresponding frequency detunings.

Δ,s1 δ,s1 Reρ¯32 Imρ¯32 ρ¯11 ρ¯22 ρ¯33 n¯21 n¯32
2×1013 2.132×1013 0.0318 0.0081 0.4838 0.4930 0.0232 0.0093 0.4699
ρ¯21 ρ¯32 ρ¯31
0.0211+0.0035i 0.0717+0.0153i 0.06680.0217i

Next, we calculated the transmittance in Equation (16) of the signal SPP near the wavelength 8.04µm for two cases, in the absence and in the presence of pump SPP (see Figure 11). The appearance of pump SPP resulted in an additional phase shift Δϕmax=π that contributes to the total phase shift of signal SPP ϕλ=2π2D+dnEF+Rλ+Δϕ. Under such conditions, we obtain the first-order constructive interference in the stub nanoresonator, when ΔS=λ0. As shown in Figure 11, the presence of the required phase shift changes the transmittance of signal SPP from minimum to maximum values at 8.04µm. The coefficients ri, ti, and si in this work were chosen empirically, in particular, u=0.1,0.9,0.065,0.9, where u=t1,s1,s3,r3.

Figure 11.

Figure 11

The signal SPP transmittance for the stub nanoresonator with InAs/ZnS NW in the vicinity of λ2 in the absence (solid red line) and in the presence of pump SPP mode E1 (dashed green line).

To verify the correctness of our analytical estimations, we carried out the direct numerical simulation taking into account the Ladder-type interaction of SPP modes with NW in the stub nanoresonator. We found the complete agreement of our numerical results with the theory when the presence of pump SPP leads to opening the transistor and switching to the regime of signal SPP transmitting (see Figure 12). Finally, we estimated the switching time of the presented effect and it is about 20ps, which corresponds to a clock frequency of 50GHz. At the same time, during the process of switching, the transmittance increases from 7% to 93%.

Figure 12.

Figure 12

The summarized electric field Ex2+Ey2 distributions (arbitrary units) for signal SPP in the stub nanoresonator loaded with NW. The switching between regimes of (a) locking and (b) transmitting of signal SPP is demonstrated. The black lines correspond to the graphene waveguide with stub nanoresonator, and the circled white line depicts the NW.

Besides, in the process of interaction, the pump SPP also gets an additional phase shift Δϕmax12 due to the arising of susceptibility χNW12=Nμ12ε0E1ρ¯12 for NW. Under the selected conditions, this resonant shift is Δϕmax12=0.619=0.197π radians and the transmittance of the pump SPP will change in comparison with the empty stub, as shown in Figure 13. Nevertheless, this change is not dramatic and the regime of pump SPP propagation is kept for the stub loaded with NW.

Figure 13.

Figure 13

The pump SPP transmittance for the stub nanoresonator in the vicinity of λ1 in the absence (solid red line) and in the presence (dashed green line) of signal SPP.

8. Conclusions

This paper addresses the challenges of achieving a strong coupling regime in the process of interaction between graphene SPPs and semiconductor NW under the high-LDOS condition. We present a full analysis of double-layer graphene waveguides based on the analytical model, its approximation, and 2D full-wave electromagnetic simulation implemented by our own. Using this approach, we can obtain a picture of the field distribution and its analytical description for any sets of variable parameters of graphene and the SPP source for different types of SPP–graphene coupling, dominance of different types of conductivity in graphene, etc. This allowed us to fulfill the characterization of the double-layer graphene waveguides. At the same time, the obtained results were necessary to successfully solve the multifactor problem of optimizing the parameters of plasmonic waveguides with a semiconductor NW. We propose the model of all-plasmonic switcher based on a graphene stub nanoresonator loaded with core–shell NW and discuss the issues of creating such a device. It should be noted that the relatively short SPP propagation lengths in graphene systems, compared with MDS structures [38], significantly restrict now the scaling of such devices up to the level of integrated circuits [39]. At the same time, the presented model can be of fundamental importance for the development of both single high-speed switchers and devices based on them using hybrid metal-graphene structures [26,40].

Obviously, the use of quantum dot (QD) instead of NW in our model is preferable when creating a real device. However, we consider the SPP to be two-dimensional waves that have no peculiarities along the z-axis. At the same time, such peculiarities will inevitably appear if infinite along the z-axis SPP encounters a volumetric object, for example, QD. A transverse component of the scattered field appears, i.e., along the z-axis. This is a significant effect, but we have mastered only the two-dimensional case of near-resonant SPP–nanostructure interaction, which is the mathematical reason for choosing an infinite wire along the z-axis that does not create a scattered component along the z-axis.

From a technical point of view, the problems in the design and manufacture of all-plasmonic switchers require special attention. The creation of such devices is possible within the already available modern technologies, but using a combination of several different experimental techniques at once. We briefly discuss the possibilities of the experimental realization of such devices. Initially, we assume that we have SiO2 substrate with recess corresponding to the further stub nanoresonator. Then, using plasma-enhanced chemical vapor deposition (PECVD) method [41] for deposition of graphene on SiO2 substrate, it is possible to form a single graphene layer on the top surface of the substrate. The next step is to load the core–shell NW into a stub nanoresonator. For this purpose, we propose using the atomic force microscopy (AFM) nanomanipulation technique [42]. Atomic force microscopy allows manipulating with a single semiconductor NW and placing it into the stub with the required accuracy. The polymer buffer layer between graphene and conventional gate dielectrics can be used to improve the device characteristics [43,44]. Such polymer coating allows achieving high carrier mobility values of over 8000cm2/V·s at room temperature [43] for graphene field-effect transistors using, for example, Al2O3 as the top-gate dielectric. The next step is to coat the NW and graphene sheet with dielectric. For example, the atomic layer deposition (ALD) method can be used for the deposition of dielectric on graphene [45,46,47] or on a polymer buffer layer [48]. Moreover, there exists an alternative way of creating a dielectric layer on the graphene. The electron beam evaporation (EBE) method allows depositing SiO2 dielectric on the graphene surface [49]. Thus, using PECVD, AFM, and ALD or EBE methods, one can completely produce the graphene “transistor” shown in Figure 7 with required device characteristics.

Acknowledgments

Authors thank A.B. Evlyukhin for helpful discussions.

Author Contributions

Conceptualization and methodology, A.V.P.; formal analysis, A.V.P., M.Y.G., and A.V.S.; software and investigation, A.Y.L., M.Y.G., and A.V.P.; visualization, M.Y.G. and A.V.S.; writing—original draft, A.V.P. and M.Y.G.; writing—review and editing, V.S.V. and A.Y.L.; and conceptualization and funding acquisition, V.S.V. All authors have read and agreed to the published version of the manuscript.

Funding

This research was funded by the Russian Science Foundation [grant number 18-19-00684] and by the Ministry of Science and Higher Education of the Russian Federation within the state task VlSU [grant number 3.5531.2017/8.9 (GB 1106/17)] in the field of scientific research.

Conflicts of Interest

The authors declare no conflict of interest.

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